Untitled
Abstract: No abstract text available
Text: MAX786RCAI Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5
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MAX786RCAI
Code28-571
Pins28
NumberLN02800571
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Untitled
Abstract: No abstract text available
Text: MAX797CSE Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)4.5 Supply Voltage Maximum (V)30
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MAX797CSE
Code16-1568
Pins16
NumberLN01601568
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PDF
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Untitled
Abstract: No abstract text available
Text: MAX786CAI Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5 Supply Voltage Maximum (V)30
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MAX786CAI
Code28-571
Pins28
NumberLN02800571
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PDF
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MAX783CBX
Abstract: No abstract text available
Text: MAX783CBX Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)Yes Soft Start (Y/N)No Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5 Supply Voltage Maximum (V)30
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MAX783CBX
Code36-25
Pins36
NumberLN03600025
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PDF
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Untitled
Abstract: No abstract text available
Text: MAX798CPE Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)4.5 Supply Voltage Maximum (V)30
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MAX798CPE
Code16-1568
Pins16
NumberLN01601568
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES
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0017bfi0
2SC3241
30MHz,
15-j1
2SC3241
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PDF
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transistor smd za
Abstract: smd transistor 5c l smd transistor 5c transistor smd KL 5F smd transistor BUD700D SMD Transistor 5f SMD Transistor BM smd transistor kl smd transistor TN
Text: _ BUD700D v is h a y ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Very low switching losses • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation
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BUD700D
BUD700D
20-Jan-99
transistor smd za
smd transistor 5c l
smd transistor 5c
transistor smd KL
5F smd transistor
SMD Transistor 5f
SMD Transistor BM
smd transistor kl
smd transistor TN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •
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2SC2097
2SC2097
30MHz
30MHz,
2k3k5k10k
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC269S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. D im ensions in m m FEATURES •
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OCR Scan
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2SC269S
2SC2695
520MHz
520MHz.
2SC2695
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PDF
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2SC2097 equivalent
Abstract: 2sc2097 transistor 2SC2097
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in m m R1 FEATURES
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OCR Scan
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2SC2097
2SC2097
30MHz
30MHz,
2k3k5k10k
2SC2097 equivalent
transistor 2SC2097
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PDF
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Mitsubishi transistor databook
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •
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2SC3022
2SC3022
520MHz,
Mitsubishi transistor databook
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PDF
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2SC2134
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR bZinflBR QQ175flb TTT NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm
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OCR Scan
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QQ175flb
2SC2134
220MHz
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PDF
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520MH
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC269S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in U H F band m obile radio applications. FEATURES
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2SC269S
2SC2695
2SC2695
520MH
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PDF
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nec 2571
Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .
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2SC4957
2SC4957-T1
4957-T2
2SC4957)
nec 2571
NEC D 553 C
nec 2571 4 pin
NEC IC D 553 C
3771 nec
nec 716
nec 1565
transistor marking T83 ghz
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PDF
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2SC2134
Abstract: RF NPN POWER TRANSISTOR 60w vhf power transistor 50W
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2134 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm R1 applications.
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2SC2134
220MHz
220MHz,
RF NPN POWER TRANSISTOR 60w
vhf power transistor 50W
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB
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2SC3908
2SC3908
30MHz,
30MHz.
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.
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bb53c
BU508A
BU508D
OT93A
BU508D
7Z88402
7Z8S40-
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3019 is silicon NPN epitaxial planar typ e transistor Dimensions in mm designed fo r RF power am plifiers in U H F band. FEATURES • • High power gain: Gpe
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OCR Scan
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2SC3019
2SC3019
900MHz)
160mW
100mW
1000pF
100pF,
560pF,
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PDF
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2sc2904 TRANSISTOR
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB
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2SC2904
2SC2904
2sc2904 TRANSISTOR
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PDF
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transistor buv 90
Abstract: BCY 85 Q60203-Y66 BCY 66
Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).
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Q60203-Y66
transistor buv 90
BCY 85
Q60203-Y66
BCY 66
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PDF
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2SC3019
Abstract: 4D6T T02E
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band. FEATURES • • • • • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, V cc = 12.5V
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OCR Scan
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2SC3019
520MHz,
j56i2
2SC3019
100mW
100pF,
560pF,
4D6T
T02E
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PDF
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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PDF
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2SC2097
Abstract: transistor 91 330 T40E
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1
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OCR Scan
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2SC2097
2SC2097
30MHz
30MHz,
T-40E
transistor 91 330
T40E
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -4 0 dBc • HIGH OUTPUT POWER : 2 7 .5 dBm at T Y P • LOW NOISE: 1.5 dB T Y P at 5 0 0 M H z
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NE46100
NE46134
NE46134
sur208
NE46100,
OT-89)
NE46134-T1
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PDF
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