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    TRANSISTOR Y 330 Search Results

    TRANSISTOR Y 330 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Y 330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MAX786RCAI Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5


    Original     		PDF MAX786RCAI Code28-571 Pins28 NumberLN02800571

    Untitled

    Abstract: No abstract text available
    Text: MAX797CSE Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)4.5 Supply Voltage Maximum (V)30


    Original     		PDF MAX797CSE Code16-1568 Pins16 NumberLN01601568

    Untitled

    Abstract: No abstract text available
    Text: MAX786CAI Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5 Supply Voltage Maximum (V)30


    Original     		PDF MAX786CAI Code28-571 Pins28 NumberLN02800571

    MAX783CBX

    Abstract: No abstract text available
    Text: MAX783CBX Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)Yes Soft Start (Y/N)No Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)5.5 Supply Voltage Maximum (V)30


    Original     		PDF MAX783CBX Code36-25 Pins36 NumberLN03600025

    Untitled

    Abstract: No abstract text available
    Text: MAX798CPE Linear ICs Dual-Output Voltage-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 330k UV Lockout (Y/N)No Soft Start (Y/N)Yes Output Config Output Transistor Current (A) Output Transistor Voltage (V) Supply Voltage Minimum (V)4.5 Supply Voltage Maximum (V)30


    Original     		PDF MAX798CPE Code16-1568 Pins16 NumberLN01601568

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES


    OCR Scan     		PDF 0017bfi0 2SC3241 30MHz, 15-j1 2SC3241

    transistor smd za

    Abstract: smd transistor 5c l smd transistor 5c transistor smd KL 5F smd transistor BUD700D SMD Transistor 5f SMD Transistor BM smd transistor kl smd transistor TN
    Text: _ BUD700D v is h a y ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Very low switching losses • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation


    OCR Scan     		PDF BUD700D BUD700D 20-Jan-99 transistor smd za smd transistor 5c l smd transistor 5c transistor smd KL 5F smd transistor SMD Transistor 5f SMD Transistor BM smd transistor kl smd transistor TN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •


    OCR Scan     		PDF 2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC269S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. D im ensions in m m FEATURES •


    OCR Scan     		PDF 2SC269S 2SC2695 520MHz 520MHz. 2SC2695

    2SC2097 equivalent

    Abstract: 2sc2097 transistor 2SC2097
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in m m R1 FEATURES


    OCR Scan     		PDF 2SC2097 2SC2097 30MHz 30MHz, 2k3k5k10k 2SC2097 equivalent transistor 2SC2097

    Mitsubishi transistor databook

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3022 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES •


    OCR Scan     		PDF 2SC3022 2SC3022 520MHz, Mitsubishi transistor databook

    2SC2134

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR bZinflBR QQ175flb TTT NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm


    OCR Scan     		PDF QQ175flb 2SC2134 220MHz

    520MH

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC269S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2695 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in U H F band m obile radio applications. FEATURES


    OCR Scan     		PDF 2SC269S 2SC2695 2SC2695 520MH

    nec 2571

    Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
    Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .


    OCR Scan     		PDF 2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz

    2SC2134

    Abstract: RF NPN POWER TRANSISTOR 60w vhf power transistor 50W
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2134 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2134 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in V H F band 24 to 28 volts operation Dimensions in mm R1 applications.


    OCR Scan     		PDF 2SC2134 220MHz 220MHz, RF NPN POWER TRANSISTOR 60w vhf power transistor 50W

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB


    OCR Scan     		PDF 2SC3908 2SC3908 30MHz, 30MHz.

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b lE bb53cl31 DDEflEbM DEI BU508A BU508D y v I> SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits o f colour television receivers. The BU508D has an integrated efficiency diode.


    OCR Scan     		PDF bb53c BU508A BU508D OT93A BU508D 7Z88402 7Z8S40-

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC3019 is silicon NPN epitaxial planar typ e transistor Dimensions in mm designed fo r RF power am plifiers in U H F band. FEATURES • • High power gain: Gpe


    OCR Scan     		PDF 2SC3019 2SC3019 900MHz) 160mW 100mW 1000pF 100pF, 560pF,

    2sc2904 TRANSISTOR

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EPITAXIAL PLANAR T Y P E DISCRETION OUTLINE DRAWING 2SC2904 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dim ensions in mm R1 FEATURES • High gain: Gpe ^ 1 1 -5dB


    OCR Scan     		PDF 2SC2904 2SC2904 2sc2904 TRANSISTOR

    transistor buv 90

    Abstract: BCY 85 Q60203-Y66 BCY 66
    Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).


    OCR Scan     		PDF Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66

    2SC3019

    Abstract: 4D6T T02E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3019 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in UHF band. FEATURES • • • • • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, V cc = 12.5V


    OCR Scan     		PDF 2SC3019 520MHz, j56i2 2SC3019 100mW 100pF, 560pF, 4D6T T02E

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944

    2SC2097

    Abstract: transistor 91 330 T40E
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1


    OCR Scan     		PDF 2SC2097 2SC2097 30MHz 30MHz, T-40E transistor 91 330 T40E

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -4 0 dBc • HIGH OUTPUT POWER : 2 7 .5 dBm at T Y P • LOW NOISE: 1.5 dB T Y P at 5 0 0 M H z


    OCR Scan     		PDF NE46100 NE46134 NE46134 sur208 NE46100, OT-89) NE46134-T1