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    TRANSISTOR XN Search Results

    TRANSISTOR XN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR XN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)


    Original     		XN04390 UNR212X UNR2223 PDF

    UN212X

    Abstract: UN2223 UNR212X UNR2223 XN04390
    Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)


    Original     		XN04390 UNR212X UN212X) UNR2223 UN2223) UN212X UN2223 UNR212X UNR2223 XN04390 PDF

    D8050

    Abstract: No abstract text available
    Text: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 6 3 2 1 (0.65) • Two elements incorporated into one package. (Transistor with built-in resistor)


    Original     		XN04390 D8050 PDF

    UN1122

    Abstract: UN1222 UNR1122 UNR1222 XN04322 XN4322
    Text: Composite Transistors XN04322 XN4322 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)


    Original     		XN04322 XN4322) UNR1222 UN1222) UNR1122 UN1122) UN1122 UN1222 XN04322 XN4322 PDF

    UN111L

    Abstract: UN121L UNR111L UNR121L XN0431L XN431L
    Text: Composite Transistors XN0431L XN431L Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO


    Original     		XN0431L XN431L) UN111L UN121L UNR111L UNR121L XN0431L XN431L PDF

    2SB970

    Abstract: 2SD601A XN4608
    Text: Composite Transistors XN4608 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage


    Original     		XN4608 2SD601A 2SB970 2SB970 XN4608 PDF

    UN1112

    Abstract: UN1212 UNR1112 UNR1212 XN04312 XN4312
    Text: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)


    Original     		XN04312 XN4312) UN1112 UN1212 UNR1112 UNR1212 XN04312 XN4312 PDF

    2SB0709A

    Abstract: 2SB709A 2SD1328 XN04609 XN4609
    Text: Composite Transistors XN04609 XN4609 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) +0.2 2.8 –0.3 +0.25 • Tr1 0.95 +0.1


    Original     		XN04609 XN4609) 2SD1328 2SB0709A 2SB709A 2SD1328 XN04609 XN4609 PDF

    TRANSISTOR C 460

    Abstract: 2SB709A 2SC2404 XN4683
    Text: Composite Transistors XN4683 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C) Symbol


    Original     		XN4683 TRANSISTOR C 460 2SB709A 2SC2404 XN4683 PDF

    UN1115

    Abstract: UN1215 UNR1115 UNR1215 XN04315 XN4315
    Text: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage


    Original     		XN04315 XN4315) UN1115 UN1215 UNR1115 UNR1215 XN04315 XN4315 PDF

    UN1121

    Abstract: UN1213 UNR1121 UNR1213 XN04382
    Text: Composite Transistors XN04382 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Unit 50 V Collector to emitter voltage VCEO 50 V Collector current


    Original     		XN04382 UN1121 UN1213 UNR1121 UNR1213 XN04382 PDF

    UN1116

    Abstract: UN1216 XN4316
    Text: Composite Transistors XN4316 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO


    Original     		XN4316 UN1216 UN1116 UN1116 XN4316 PDF

    2SB709A

    Abstract: 2SD1328 XN4609
    Text: Composite Transistors XN4609 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output (Tr1) For general amplification (Tr2) +0.2 2.8 –0.3 +0.25 • Tr1 0.95 0.95 3 +0.1


    Original     		XN4609 2SD1328 2SB709A 270Hz 100Hz 10kHz 2SB709A XN4609 PDF

    UN1112

    Abstract: UN1212 XN1A312
    Text: Composite Transistors XN1A312 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 ● Parameter (Ta=25˚C) Ratings Unit Collector to base voltage


    Original     		XN1A312 UN1212 UN1112 UN1112 XN1A312 PDF

    UN1122

    Abstract: UN1213 UNR1122 UNR1213 XN04381 XN4381
    Text: Composite Transistors XN04381 XN4381 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Unit 50 V Collector to emitter voltage VCEO


    Original     		XN04381 XN4381) UN1122 UN1213 UNR1122 UNR1213 XN04381 XN4381 PDF

    2SB0970

    Abstract: 2SB970 2SD0601A 2SD601A XN04608 XN4608
    Text: Composite Transistors XN04608 XN4608 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) +0.2 2.8 –0.3 +0.25 Unit Collector to base voltage


    Original     		XN04608 XN4608) 2SD0601A 2SD601A) 2SB0970 2SB970) 2SB970 2SD601A XN04608 XN4608 PDF

    UN1114

    Abstract: UN1214 XN4314
    Text: Composite Transistors XN4314 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage


    Original     		XN4314 UN1114 UN1214 XN4314 PDF

    2SB0709A

    Abstract: 2SB709A 2SC2404 XN04683 XN4683
    Text: Composite Transistors XN04683 XN4683 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For high-frequency amplification/For general amplification 2.8 –0.3 +0.25 1.5 –0.05 3 0.4±0.2 Parameter (Ta=25˚C)


    Original     		XN04683 XN4683) 2SB0709A 2SB709A 2SC2404 XN04683 XN4683 PDF

    2SB0970

    Abstract: 2SB970 2SD1328 XN04604 XN4604
    Text: Composite Transistors XN04604 XN4604 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 0.4±0.2 Parameter (Ta=25˚C) 1 : Collector (Tr1)


    Original     		XN04604 XN4604) 2SD1328 2SB0970 2SB970) 2SB970 2SD1328 XN04604 XN4604 PDF

    UN1211

    Abstract: UN1111 XN4311
    Text: Composite Transistors XN4311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage


    Original     		XN4311 UN1211 UN1111 XN4311 PDF

    UN1114

    Abstract: UN1214 UNR1114 UNR1214 XN04314 XN4314
    Text: Composite Transistors XN04314 XN4314 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO 50 V Collector to emitter voltage


    Original     		XN04314 XN4314) UN1114 UN1214 UNR1114 UNR1214 XN04314 XN4314 PDF

    2SB0709A

    Abstract: 2SB709A 2SD0601A 2SD601A XN04601 XN4601
    Text: Composite Transistors XN04601 XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element Parameter 1.1+0.2 –0.1 2SD0601A(2SD601A) + 2SB0709A(2SB709A)


    Original     		XN04601 XN4601) 2SD0601A 2SD601A) 2SB0709A 2SB709A) 2SB709A 2SD601A XN04601 XN4601 PDF

    UN111L

    Abstract: UN121L XN431L
    Text: Composite Transistors XN431L Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Ratings Unit VCBO 50 V Collector to emitter voltage VCEO 50 V


    Original     		XN431L UN111L UN121L XN431L PDF

    UN1116

    Abstract: UN1216 UNR1116 UNR1216 XN04316 XN4316
    Text: Composite Transistors XN04316 XN4316 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter 3 0.4±0.2 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2)


    Original     		XN04316 XN4316) UNR1216 UN1216) UNR1116 UN1116) UN1116 UN1216 XN04316 XN4316 PDF