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    TRANSISTOR WL 431 Search Results

    TRANSISTOR WL 431 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WL 431 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E142 wafer format

    Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
    Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001  SCILLC, 2001 Previous Edition  2000 “All Rights Reserved”


    Original     		PDF DL140/D Jan-2001 r14525 E142 wafer format HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28

    bistable multivibrator using ic 555

    Abstract: CBM 4080 mc10116fn 10H351 10h115 MC1658 10h350 MC10197-D G2Q16 MC68824
    Text: DL122/D Rev. 7, Mar-2000 ON Semiconductor MECL Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		PDF DL122/D Mar-2000 m22-3781 r14525 DL122 bistable multivibrator using ic 555 CBM 4080 mc10116fn 10H351 10h115 MC1658 10h350 MC10197-D G2Q16 MC68824

    transistor WL 431

    Abstract: S M R2632 transistor substitution chart SMD IC TL 431 saw resonator r2632 R2632 CR2031 R2632 resonator saw Colpitts circuit design A65 SMD
    Text: National Semiconductor Application Note 1021 December 1995 INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control data exchange keyless entry systems and others The most popular frequency in Europe for


    Original     		PDF

    transistor WL 431

    Abstract: No abstract text available
    Text: MC10E1651 5V, −5V ECL Dual ECL Output Comparator with Latch The MC10E1651 is fabricated using ON Semiconductor’s advanced MOSAIC IIIG process. The MC10E1651 incorporates a fixed level of input hysteresis as well as output compatibility with 10 KH logic


    Original     		PDF MC10E1651 16-pin 20-pin AND8020 AN1404 AN1405 AN1406 transistor WL 431

    marking code P60

    Abstract: PCA4738F-80A 38C3 56ROM igbt catalog Mitsubishi mitsubishi series 740 software
    Text: MITSUBISHI MICROCOMPUTERS 38C3 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER ●LCD drive control circuit Bias . 1/1, 1/2, 1/3 Duty . 1/1, 1/2, 1/3, 1/4


    Original     		PDF

    mitsubishi series 740 software

    Abstract: PCA4738F-80A 38C3 igbt catalog Mitsubishi
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    mitsubishi series 740 software

    Abstract: igbt catalog Mitsubishi Marking P71 PCA4738F-80A 38C3 Hitachi LCD Part Numbering
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 001420b BLY93A r3774

    Untitled

    Abstract: No abstract text available
    Text: i 86D 0 1 7 9 0 T - 33 -1 BLX69A N AUER PHILIPS/DISCRETE QbE D bb53ci31 0014036 4 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V , The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX69A bb53c bb53131

    Untitled

    Abstract: No abstract text available
    Text: N APIER PHILIPS/DISCRETE b=lE D • bbS3T31 003=1136 T4b APX BLV92 _J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.


    OCR Scan     		PDF bbS3T31 BLV92 OT-171) DDER14S

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE t iT E I> • bb53^31 □D3TD74 OIL A APX BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope primarily intended fo r use as linear amplifier in u.h.f. television transmitters. Features:


    OCR Scan     		PDF D3TD74 BLV59 OT-171 002T0fl2

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.


    OCR Scan     		PDF BLV90/SL OT-172D)

    BLY87A

    Abstract: D-05 blv87
    Text: Ob E N AUER P H I L I P S / D I S C RE T E 86D 01878 r D D bbSBTBl 0 O l m i fa 1 • - BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to


    OCR Scan     		PDF BLY87A jKS84 BLY87A D-05 blv87

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested


    OCR Scan     		PDF BLX13 147nH 118nH bbS3T31

    BFS23A

    Abstract: 4312 020 36640
    Text: b5E D PHILIPS INTERNATIONAL m 711002b Ü0b2b27 731 BFS23A ¡PHIN X V.H.F. POWER TRANSISTOR N-P-N epitaxial Planartransistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage o f 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 711002b 0b2b27 BFS23A 9-j18 O-39/1 BFS23A 4312 020 36640

    relay wl 78

    Abstract: HD4C RC144DPL
    Text: RC144ACÍ and RC144ACL <!U> Rockwell RC144ACi and RC144ACL Integrated High Speed Data/Fax/Voice Modem Device Set with Cellular Direct Connect Support INTRODUCTION FEATURES The Rockwell RC144ACi and RC144ACL integrated data/fax/voice modem device set families support US or


    OCR Scan     		PDF RC144ACÍ RC144ACL RC144ACi RC144ACL RC144ACi/ACL) J22198 relay wl 78 HD4C RC144DPL

    Delta dps 240 fp

    Abstract: rockwell l39 DELTA DPS 1200 rc144dpg RC144ACG 386 laptop schematic MD105 9 UN07
    Text: RC144ACG Rockwell RC144ACG 3.3V, Low Power, Integrated High Speed Data/Fax/Voice Modem Device Set with Cellular Direct Connect Support INTRODUCTION FEATURES The Rockwell RC144ACG integrated data/fax/voice modem device set family supports high speed data and


    OCR Scan     		PDF RC144ACG RC144ACG J22198 20017Mazzodi 00E4S1S Delta dps 240 fp rockwell l39 DELTA DPS 1200 rc144dpg 386 laptop schematic MD105 9 UN07

    J493

    Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
    Text: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested


    OCR Scan     		PDF bS3T31 BLX13 70MHz J493 BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz

    BLY88A

    Abstract: A41E BLY88 W1032 Paver Components
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF DQ57R27 BLY88A to-16 BLY88A A41E BLY88 W1032 Paver Components

    error code e39

    Abstract: jl audio 500 1 schematics SLE 77 M737-4 accelerator rockwell modem S2665 transistor SMD S33 gd241 FL 032 PIF MD130
    Text: RC144ACFL and RC144ATFL Rockwell RC144ACFL and RC144ATFL Low Power, Integrated High Speed Data/Fax/Voice Modem Device Set _for Portable Applications_ INTRODUCTION FEATURES The Rockwell RC144ACFL and RC144ATFL integrated data/fax/voice modem device set supports high speed


    OCR Scan     		PDF RC144ACFL RC144ATFL RC144ATFL 10ECTM DG24177 error code e39 jl audio 500 1 schematics SLE 77 M737-4 accelerator rockwell modem S2665 transistor SMD S33 gd241 FL 032 PIF MD130

    4312 020 36640

    Abstract: bfs23 BFS23A
    Text: N AMER P H IL IP S /D IS C R E T E b 'ìE J> m 0 0 2 B 7 3 G 2 5 3 • IAPX bbSB^Bl A BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar tra n sisto r intended fo r use in class-A, B and C operated m ob ile, industrial and m ilita ry tra n s m itte rs w ith a su p p ly voltage o f 28 V . The tra n sisto r is resistance stabilized. Every tra n ­


    OCR Scan     		PDF 002B73G BFS23A O-39/1; 4312 020 36640 bfs23 BFS23A

    Manual inverter vfc 1200

    Abstract: ITT daa 288 ATIC 107
    Text: RC288ACÎ Rockwell RC288ACi Integrated V.34 Data/V. 17 Fax/Voice Modem Device Set Family INTRODUCTION FEATURES T h e Rockw ell R C 288AC i integrated m odem device set fam ily supports ultra high speed data and high speed fax operation. M odels are provided that m eet different requirem ents for data


    OCR Scan     		PDF RC288ACÎ RC288ACi J22198 Manual inverter vfc 1200 ITT daa 288 ATIC 107

    KDS 8 MHZ cq crystal

    Abstract: Mcu-02 Ls allen bradley CC series xnxx Non-Volatile RAM accelerator rockwell modem XNXXX KDS crystal 12.000 4 MHz crystal KDS 2K KDS technical report
    Text: RC288ACÌ Modem Designer’s Guide 1. INTRODUCTION 1.2. 1.1. SUMMARY • Data modem throughput up to 115.2 kbps - V.34, V.FC, V.32 bis, V.32, V.22 bis, V.22A/B, V.23. and V.21; Bell 212A and 103 - V.42 LAPM and MNP 2-4 error correction - V.42 bis and MNP 5 data compression


    OCR Scan     		PDF RC288ACÌ RC288ACi 42/MNP J22198 KDS 8 MHZ cq crystal Mcu-02 Ls allen bradley CC series xnxx Non-Volatile RAM accelerator rockwell modem XNXXX KDS crystal 12.000 4 MHz crystal KDS 2K KDS technical report

    Untitled

    Abstract: No abstract text available
    Text: GD40117B Types Preliminary Data CONTRO L Programmable Dual 4-Bit Terminator / STROBE DATA \ A A High-Voltage Types 20-Volt Rating Features: • One standard “B " output will drive eight terminator circuits. ■ Will terminate a CMOS data bus with up to 40 B-series inputs inputs or 3-state


    OCR Scan     		PDF GD40117B 20-Volt