sp263
Abstract: No abstract text available
Text: front covers 6/9/05 2:47 PM Page 1 front covers 6/9/05 2:47 PM Page 2 1 press-loc tsk- prefix #36 5/3/05 2:59 PM Page 3 TABLE OF CONTENTS PREFIX Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Page 3
|
Original
|
|
PDF
|
ZO 607 TRIAC
Abstract: RTCA DO-160 iso 7137 TRIAC zo 607 MA NAS 1149 MS3320 EN3155 Cross Reference Full Line Condensed Catalogue 1977 DIN 72585 a1 4.1 RBS 6302 NAS1149
Text: Contents Introduction Thermal Overcurrent Circuit Breakers Thermal-Magnetic Overcurrent Circuit Breakers Hydraulic-Magnetic and Magnetic Overcurrent Circuit Breakers High Performance Circuit Breakers and Battery Switches Door Locking, Time Delay and Motor Protection Controls
|
Original
|
|
PDF
|
2-7D101A
Abstract: 2SA1428 2SC3668 liaj
Text: TO SH IB A 2SA1428 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 428 U nit in mm 7.1 MAX 2.7 MAX • Low Collector Saturation Voltage : v C E (sa t)= - 0 .5 V (Max.) ( I c = - 1 A )
|
OCR Scan
|
2SA1428
2SC3668.
2-7D101A
2SA1428
2SC3668
liaj
|
PDF
|
Untitled
Abstract: No abstract text available
Text: mUERCX POUEREX INC 3TE T> m 72T4b21 000424Q b *P R X T -3 3 -3 S - KD4212Í0HB Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 High-Beta Dual Darlington
|
OCR Scan
|
72T4b21
000424Q
KD4212Ã
BP107,
Amperes/1200
KD421210697
KD421210HB
|
PDF
|
NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
|
OCR Scan
|
NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
|
PDF
|
ID 27
Abstract: transistor w 428 Hj KTK2314 L428
Text: SEMICONDUCTOR TECHNICAL DATA KTK2314 SILICON N CHANNEL MOSFET HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS FEATURES • 4V Gate Drive. • Low Drain-Source ON Resistance : RDS ON =66m&(Typ.)
|
OCR Scan
|
KTK2314
100iuA
67C/W
428/xH
ID 27
transistor w 428 Hj
KTK2314
L428
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 30E D H V 'të 'ïE B ? S G S -T H O M S O N I!Li TnS IRÖO©S G Q E '^ O 'Ì fl • - ' p 3 0 [_ ] 5 s 6 ^ TH0MS0N S G S 1 5 0 M A 0 1 OD1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE V qss ^DS on SGS150MA010D1 100 V 0.009 • • •
|
OCR Scan
|
SGS150MA010D1
10jiH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
|
OCR Scan
|
NE429M01
NE429M01
NE429M01-T1
Fin/50
|
PDF
|
NEC Ga FET marking L
Abstract: No abstract text available
Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
|
OCR Scan
|
NE429M01
NE429M01
200pm
NEC Ga FET marking L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1428 2 S A 1 428 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS • • • 7.1 M A X 2.7 M A X Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )
|
OCR Scan
|
2SA1428
2SC3668.
2-7D101A
|
PDF
|
NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
|
OCR Scan
|
NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IN T E G R A T E D C IR C U IT S LAS 6350 SERIES U N IT R O D E 5 AMP SWITCHING REGULATORS FEATURES DESCRIPTIO N • • • • • The LAS 6350 Series are monolithic integrated circuits designed for fixed fre quency, pulse width modulated, switching converter applications such as step-down,
|
OCR Scan
|
LAS6350P1,
6351P1
LAS6350,
|
PDF
|
NE42484C
Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
|
OCR Scan
|
NE42484C
NE42484C
42484C
E42484C-SL
NE42484C-T1
transistor NEC D 586
NEC Ga FET marking L
NE42484C-T1
28609
low noise FET NEC U
ne42484
nec gaas fet marking
NEC 2533
NEC Ga FET
|
PDF
|
2SB424
Abstract: 2SD234 2SD235
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1428 2 S A 1 428 TO S H IB A TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SW ITCHING APPLICATIONS. 7 .1 M A X • Low Collector Saturation Voltage : v CE(sat) = -0.5V (Max.) (l£ = -1A ) High Speed Switching Time : tstg=1.0/^s (Typ.)
|
OCR Scan
|
2SA1428
2SC3668.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TLP2601 GaA4 As IRED a PHOTO-IC ISOLATED LINE RECEIVER Unit in m m SIMPLEX/MULTIPLEX DATA TRANSMISSION COMPUTER-PERIPHERAL INTERFACE MICROPROCESSOR SYSTEM INTERFACE DIGITAL ISOLATION FOR A/D, D/A CONVERSION DIRECT REPLACEMENT FOR HCPL-2601 The TOSHIBA TLP2601 is a photocoupler which combines a
|
OCR Scan
|
TLP2601
HCPL-2601
TLP2601
318Vpp
000V/*
|
PDF
|
TRANSISTOR SMD zwa
Abstract: 425L1 zwa smd SMD diode JB bts 425 l1 smd zener diode code n0 SMD Transistor g14 BTS425 JB OL4 A2723
Text: • 4 S 3 5 Í.0 5 00=12717 001 ■ SIEM EN S PROFET BTS 425 L1 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features * * * * * * * * * * * * Overload protection
|
OCR Scan
|
0235bDS
components161
systems17>
TRANSISTOR SMD zwa
425L1
zwa smd
SMD diode JB
bts 425 l1
smd zener diode code n0
SMD Transistor g14
BTS425
JB OL4
A2723
|
PDF
|
BTS 425
Abstract: bts 425 l1 BTS 433 426L1 BTS425L1 tqs16 D2528 BTS 437
Text: SIEMENS PROFET BTS425L1 Smart Highside Power Switch Features Product Summary • • • • • • • Overvoltage protection W b AZ) Operating voltage On-state resistance Load current (ISO) Vbb(on) Ro n Current limitation /L(SCr) • • • • • Overload protection
|
OCR Scan
|
BTS425L1
O-22QAB/Ü
E3043
BTS425L1
Q67060-S6100-A4
BTS 425
bts 425 l1
BTS 433
426L1
tqs16
D2528
BTS 437
|
PDF
|
2n189
Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits
|
OCR Scan
|
2G101*
2G102*
2G103*
2G109
2G220
2G221
2G222
2G223
2G224
2n189
2N1136b
2N420
B1151 EQUIVALENT
2SA114
OC59
2T312
2T203
SFT125
2N1152
|
PDF
|
SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
|
PDF
|
2N1714
Abstract: 2N1716 2N1717 2N17H 2N1715
Text: MlLr-S-195001263A t,L, 15 MAY 1963 SUPERSEDING M IL -S-19500/263 (E L ) <l< PfDUII AD «V r u u n v/ m vV ± 10At MILITARY SPECIFICATION TRANSISTOR, NPN, SILICON, POWER TYPES 2N1714 THROUGH 2N1717 1. SCOPE 1.1 Scope. This specification covers th e detail requirem ents fo r silicon, N PN , tran sis•
|
OCR Scan
|
MIL-S-I9500/263A
MIL-S-19500/263
2N1714
2N1717
2N1714.
2N1715.
2N1716.
2N1716
2N1717
2N17H
2N1715
|
PDF
|
2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
|
OCR Scan
|
4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
|
PDF
|
LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
|
OCR Scan
|
C4382.
|
PDF
|
