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    TRANSISTOR W 04 59 Search Results

    TRANSISTOR W 04 59 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W 04 59 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.


    Original     		PDF BLL6H0514-25 BLL6H0514-25 771-BLL6H0514-25112

    BLL6H0514-25

    Abstract: No abstract text available
    Text: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.


    Original     		PDF BLL6H0514-25 BLL6H0514-25

    Untitled

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP DUAL HIGH POWER OP-AMP 2541 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Available as SMD #5962-9083801 HX High Output Current - 10 Amps Peak Wide Power Supply Range - ±10V to ±40V


    Original     		PDF 2541SKB MIL-PRF-38534 MSK2541 MSK2541E MSK2541B 5962-9083801HX MIL-PRF-38534,

    B1204

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5900RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to 100K RAD Ultra Low Dropout for Reduced Power Consumption


    Original     		PDF ISO-9001 5900RH MIL-PRF-38534 5900RH MSK5900RH MSK5900ERH MSK5900HRH MSK5900KRH B1204

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5910RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to TBDK RAD Ultra Low Dropout for Reduced Power Consumption


    Original     		PDF ISO-9001 5910RH MIL-PRF-38534 5910RH MSK5910RHG MSK5910ERHG MSK5910HRHG MSK5910KRHG

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5910RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to TBDK RAD Ultra Low Dropout for Reduced Power Consumption


    Original     		PDF ISO-9001 5910RH MIL-PRF-38534 5910RH MSK5910RHG MSK5910ERHG MSK5910HRHG MSK5910KRHG

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. RAD TOLERANT ULTRA LOW DROPOUT ADJUSTABLE POSITIVE LINEAR REGULATOR 5910RH 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Total Dose Rated to TBDK RAD Ultra Low Dropout for Reduced Power Consumption


    Original     		PDF ISO-9001 5910RH MIL-PRF-38534 5910RH MSK5910RHG MSK5910ERHG MSK5910HRHG MSK5910KRHG

    37ie

    Abstract: RESISTOR POTENTIOMETER APEX pa21
    Text: ISO-9001 CERTIFIED BY DSCC DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/184 M.S.KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152 Space Efficient Dual Amplifier


    Original     		PDF ISO-9001 MSK184 MIL-PRF-38534 MSK182 MSK183 MSK184 MIL-PRF-38534/DSCC MSK182 37ie RESISTOR POTENTIOMETER APEX pa21

    apex pa26

    Abstract: APEX pa21 PA26 audio amp MSK184 PA26 transistor smd 183 NV SMD TRANSISTOR MSK182 MSK183 MSK185
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER 182/183/ 184/185 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: MSK185 Replaces APEX PA26 MSK184 Replaces APEX PA21 Available to DSCC SMD 5962-92152


    Original     		PDF ISO-9001 MIL-PRF-38534 MSK185 MSK184 MSK183 MSK182 MSK184 MSK185 MIL-PRF-38534/DSCC MSK182 apex pa26 APEX pa21 PA26 audio amp PA26 transistor smd 183 NV SMD TRANSISTOR MSK183

    Untitled

    Abstract: No abstract text available
    Text: FOR REVIEW ONLY 5962F1023504K IRUH330125AK Radiation Hardended Ultra Low Dropout IRUH330125AP Fixed Positive Linear Regulator +3.3VIN to +2.5VOUT @3.0A Product Summary Part Number IRUH330125AK IRUH330125AP Dropout IO VIN VOUT 0.4V 3.0A 3.3V 2.5V 8-LEAD FLAT PACK


    Original     		PDF 5962F1023504K) IRUH330125AK IRUH330125AP IRUH330125AP IRUH330125 300Krads 500Krad 100Krad MIL-PRF-38534

    Untitled

    Abstract: No abstract text available
    Text: FOR REVIEW ONLY 5962F1023504K IRUH330125AK Radiation Hardended Ultra Low Dropout IRUH330125AP Fixed Positive Linear Regulator +3.3VIN to +2.5VOUT @3.0A Product Summary Part Number Dropout IO VIN VOUT 0.4V 3.0A 3.3V 2.5V IRUH330125AK IRUH330125AP 8-LEAD FLAT PACK


    Original     		PDF 5962F1023504K) IRUH330125AK IRUH330125AP IRUH330125 300Krads 500Krad 100Krad MIL-PRF-38534

    BLF246B

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES


    Original     		PDF M3D075 BLF246B MBB157 MBC826 603516/05/pp16 BLF246B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 May 17 2002 Jul 04 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-70 PINNING - SOT502A


    Original     		PDF M3D379 BLF2022-70 OT502A SCA74 613524/04/pp12

    transistor 2222

    Abstract: "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1996 Jun 04 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X


    Original     		PDF BFG11W/X OT343 SCA49 127101/1200/02/pp12 transistor 2222 "MARKING CODE S4" marking 82 sot343 BC548 bc548 PLASTIC

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110—2170 MHz, 2W, 28V 7/9/04 MAPLST2122-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase


    Original     		PDF MAPLST2122-002PP 17GHz, 28Vdc 27dBm -45dBc 11GHz) PFP-16

    200 Ampere power transistor

    Abstract: 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN
    Text: Silicon Power Transistor Features: • • • • Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 ~ 70 at IC = 4.0A. VCE Sat = 1.1V (maximum) at IC = 4.0 A, IB = 400mA. Designed for use in general-purpose amplifier and switching applications.


    Original     		PDF 400mA. 2N3055 200 Ampere power transistor 2n3055 malaysia 2n3055 collector characteristic curve 2N3055 curve 2N3055 NPN Transistor 2N3055 2n3055 TRANSISTOR 530 TRANSISTOR 2n3055 2n3055 Power Transistor NPN

    BLF861

    Abstract: BLF861A UT70 821 ceramic capacitor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861A UHF power LDMOS transistor Preliminary specification 2000 Aug 04 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861A PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF861A OT540A 613524/09/pp13 BLF861 BLF861A UT70 821 ceramic capacitor

    BSV64

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN medium power transistor BSV64


    Original     		PDF M3D110 BSV64 MAM317 SCA54 117047/00/03/pp8 BSV64 BP317

    Untitled

    Abstract: No abstract text available
    Text: AC-DC 400-2500 Watts fleXPower Series xppower.com • Configurable for Fast Time to Market • SEMI F47 Compliant • Flexible Series & Parallel Capability • -20 °C Operation • Extra Power Available at High Line • Optional Fan Speed Control • 3 Year Warranty


    Original     		PDF PHDR-10VS. SPHD-001T-P0 26-Sept-12

    darlingtion transistor 2 amp

    Abstract: TIP150 NPN Transistor 50A 400V
    Text: Transistor Features: • Collector-Emitter Sustaining Voltage VCEC SUS = 30V (Minimum) • Collector-Emitter Saturation Voltage VCE (sat) = 2.0V (Maximum) at IC = 5.0 A • Reverse-Base SOA - 300V to 400V at 7A Dimensions Minimum Maximum A 14.68 15.31 B


    Original     		PDF TIP150 O-220 darlingtion transistor 2 amp TIP150 NPN Transistor 50A 400V

    CA3095E

    Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
    Text: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp


    OCR Scan     		PDF CA3095E 16-Lead 3095E 27--Bias CA3095E 28--Super-beta 30-High-input-im Fia32 34--CA309SE CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array

    SMD TRANSISTOR MARKING P28

    Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
    Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes


    OCR Scan     		PDF 5962-R053-94. SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


    OCR Scan     		PDF 40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852

    Untitled

    Abstract: No abstract text available
    Text: h 7 > V * * /Transistors UMZ2N IMZ2A UMZ2N/IMZ2A Isolated Mini-Mold Device /General Small Signal Amp. • ft« • ^ • \f'jil2 /D im e n s io n s U n it: mm 1) UM T (SC-70), SM T (SC-59) ¿ i l - 2« 0 b ÿ > ' J X 9 1 f A -o X I'Z o 2) UM T, SM T « * iw r i7 * s .


    OCR Scan     		PDF SC-70) SC-59)