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    TRANSISTOR TR4 Search Results

    TRANSISTOR TR4 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TR4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


    Original     		PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module

    LB1275

    Abstract: TR10 TR11 TR12
    Text: Ordering number : EN790E LB1275 Monolithic Digital IC 7-Unit, Darlington Transistor Array Overview This LB1275, 7-unit Darlington transistor array using NPN transistors, is specially designed for printer driver, lamp or relay driver. Protector diodes against negative input are used by which it is easy to design drive circuits of a calculator with a printer


    Original     		PDF EN790E LB1275 LB1275, 100mA LB1275 TR10 TR11 TR12

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    B632K

    Abstract: D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632
    Text: Ordering number:ENN341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]


    Original     		PDF ENN341G 2SB632, 632K/2SD612, 5V/35V, 2009B O-126 B632K, B632K D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632

    HVV1214-140

    Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
    Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain


    Original     		PDF HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB

    a02 Transistor rf

    Abstract: resistor 56E TR400 BCR400 BCR400R BCR400W all ic in one file TR-400
    Text: Application Note No. 014 High Frequency Products Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W RF transistor controlled by BCR400 Operating point • BCR400 stabilizes the operating CURRENT i.e. IC or ID , the collector ( or drain ) voltage


    Original     		PDF BCR400R BCR400W BCR400 BCR400 BCR400) a02 Transistor rf resistor 56E TR400 BCR400W all ic in one file TR-400

    all ic in one file

    Abstract: TR400 BCR400W BCR400 BCR400R
    Text: Silicon Discrete Components Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W Figure 1 Application Note No. 014 RF Transistor Controlled by BCR400 Operating Point • BCR400 stabilizes the operating current i.e. IC or ID , the collector (or drain) voltage


    Original     		PDF BCR400R BCR400W BCR400 BCR400 BCR400) all ic in one file TR400 BCR400W

    SL2365

    Abstract: ON SEMICONDUCTOR 613 MP14
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS DS 3306 -1 SL2365 VERY HIGH PERFORMANCE TRANSISTOR ARRAY The SL2365 is an array of transistors internally connected to form a dual long-tail pair with current mirrors whose bases


    Original     		PDF SL2365 SL2365 ON SEMICONDUCTOR 613 MP14

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS DS 3306 -1 SL2365 VERY HIGH PERFORMANCE TRANSISTOR ARRAY The SL2365 is an array of transistors internally connected to form a dual long-tail pair with current mirrors whose bases


    Original     		PDF SL2365 SL2365

    MP14

    Abstract: SL2365 sl236
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS DS 3306 -1 SL2365 VERY HIGH PERFORMANCE TRANSISTOR ARRAY The SL2365 is an array of transistors internally connected to form a dual long-tail pair with current mirrors whose bases


    Original     		PDF SL2365 SL2365 MP14 sl236

    Dual Long-Tailed Pair Transistor Array

    Abstract: TRANSISTOR tr4 MP14 SL2365
    Text: DS 3306 -1 SL2365 VERY HIGH PERFORMANCE TRANSISTOR ARRAY The SL2365 is an array of transistors internally connected to form a dual long-tail pair with current mirrors whose bases and collectors are connected internally. The ICs are manufactured on a very high speed bipolar process which


    Original     		PDF SL2365 SL2365 Dual Long-Tailed Pair Transistor Array TRANSISTOR tr4 MP14

    ic1 555

    Abstract: ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A ZSD100 Piezo Transducers voltage controlled oscillator using ic 555
    Text: Application Note 16 Issue 1 March 1996 Application Note 16 Issue 1 March 1996 ZD1 Automotive and Household Siren Driver Circuits D5 R6 +12V C5 R12 ZSD100 and Discrete ’H’ Bridge Minimum Part Count Solution R13 D2 D4 TR6 TR4 David Brotton Neil Chadderton


    Original     		PDF ZSD100 ZSD100 ic1 555 ic2 555 ZTX850 ZTX950 DATASHEET OF IC 555 555 timer astable multivibrator 790A Piezo Transducers voltage controlled oscillator using ic 555

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		PDF TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent

    BY206 diode

    Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
    Text: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex


    Original     		PDF FX1589, 1000V1 ZTX214C ZTX384C ZVN2110A ZTX300 BY206 diode mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589

    TTL integrated circuit Dual J-K Master Slave Flip flop

    Abstract: Fairchild 9002 DTL Fairchild 930 JK flipflop 9001 micrologic* master slave ami 9002 ttul Logic 9001 fairchild micrologic dtl rs flip flop ScansUX979
    Text: MARCH 1967 • FAIRCHILD TR A N SIST O R -T R A N SIST O R G E N E R A L D E S C R IP T IO N MICROLOGIC The Fairchild Transistor-Transistor M icrologic* Integrated Circuit fam ily TT/iL com b ines a high fanout, high noise immunity, low power dissipation and good capacitive load driving


    OCR Scan     		PDF

    2SC5053 NPN

    Abstract: B-2180
    Text: M* Transistors/Surface I' tr4 » w - Mounting Type • MPT3 • CPT3 Package MPT3 series includes mini molded power transistor models rated at Pc=0.5 to 2 W SC-62 ; CPT F5 series are surface mounting power transistors. Part No. Application PNP 2S02167 - -


    OCR Scan     		PDF SC-62) 2S02167 2SD1664 2SD1766 2SD1767 2SC5053 2SD2318 2SA1759 2SA1812 2SC4505 2SC5053 NPN B-2180

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RN1510,RN1511 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1510, RN1511 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1.6-0.1 Including Two Devices In SMV (Super Mini Type with 5 leads)


    OCR Scan     		PDF RN1510 RN1511 RN1510, N2510 RN1510

    mp4001

    Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
    Text: Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting continues to increase in the field of discrete products, miniaturization of the hybrid devices named super mini and power mini is advancing rapidly. There are also calls for miniaturization and


    OCR Scan     		PDF 700cm1 300cmJ mp4001 MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    ALY TRANSISTOR

    Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 ALY TRANSISTOR 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY