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    TRANSISTOR TP 2307 Search Results

    TRANSISTOR TP 2307 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TP 2307 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2395 transistor

    Abstract: No abstract text available
    Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLF8G24LS-100V; BLF8G24LS-100GV BLF8G24LS-100V 24LS-100GV 2395 transistor

    2305 transistor

    Abstract: No abstract text available
    Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLF8G24LS-150V; BLF8G24LS-150GV BLF8G24LS-150V 8G24LS-150GV 2305 transistor

    2395 transistor

    Abstract: No abstract text available
    Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLF8G24LS-150V; BLF8G24LS-150GV BLF8G24LS-150V 8G24LS-150GV 2395 transistor

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    230703

    Abstract: SJE1349
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR SJE1349 TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage


    Original     		PDF SJE1349 O-220 C-120 SJE1349 230703E 230703

    SJE1349

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTOR SJE1349 TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage


    Original     		PDF ISO/TS16949 SJE1349 O-220 C-120 SJE1349 230703E

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR SJE1349 TO-220 Plastic Package Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage


    Original     		PDF SJE1349 O-220 C-120 SJE1349 230703E

    IRF340

    Abstract: TA17424 to204ae TB334
    Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


    Original     		PDF IRF340 TB334 O-204AE TA17424. IRF340 TA17424 to204ae TB334

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    UPC1342V

    Abstract: UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 40WTHD 2SD2013 PC1342V 2SC2987 C2987
    Text: N E C 6427525 N E C ELECTRONICS INC DSE D | t,427S25 GG230t,4 7 | ~ E LE CTRON IC S INC 05E 23064 D BIPOLAR ANALOG INTEGRATED CIRCUIT MP C I 3 4 2 V 7~z-7 t/t2S'-C>/ 5 0 to 1 1 0 W POWER A M P LIFIE R DRIVER DESCRIPTION ¿¿PC1342V is a integrated monolithic circuit designed for 50 W to 110 W class HiFi audio power amplifier and consists of


    OCR Scan     		PDF 427S25 GG230t uPC1342V D53D75 UPC1342 transistor C 2987A transistor 2sc 4267 C1342V 40WTHD 2SD2013 PC1342V 2SC2987 C2987

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    STK4231

    Abstract: STK4231II STK4231II power amplifier stereo STK4231 for power supply 8Q transistor 8c 617 transistor STK4231 II DBA40C MG-200 STK4201II
    Text: Ordering number: EN 2307 Thick Film Hybrid IC S T K 4 2 3 1 II 2-Channel 100W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require­


    OCR Scan     		PDF STK4231II STK4201II STK4231II) STK4201V STK4231 STK4231II STK4231II power amplifier stereo STK4231 for power supply 8Q transistor 8c 617 transistor STK4231 II DBA40C MG-200

    Transistor TP 2307

    Abstract: motorola rf Power Transistor mrf317 F317
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F317 The RF Line NPN Silicon RF P o w er Transistor . . . designed prim arily for w ideband large-signal output am plifier stages in 3 0 -2 0 0 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W


    OCR Scan     		PDF Carrier/120 MRF317 Transistor TP 2307 motorola rf Power Transistor mrf317 F317

    STK4231II

    Abstract: STK4231 for power supply STK4231 stk4231 ll STK4231 II tagl2 8Q transistor 100 100w stereo amplifier 8c 617 transistor DBA40C
    Text: Ordering number: EN 2307 Thick Film Hybrid IC No.2307 S T K 4 2 3 1 II 2-Channel 1Û0W min AF Power Amp Dual Supplies Features • The STK4201II series (STK4231II) and STK4201V series (high-grade type) are pin-compatible in the output range of 60W to 100W. Once the PCB pattern is designed, you can easily satisfy the require­


    OCR Scan     		PDF 9018TA/TS STK4231II STK4201II STK4231II) STK4201V STK4231II STK4231 for power supply STK4231 stk4231 ll STK4231 II tagl2 8Q transistor 100 100w stereo amplifier 8c 617 transistor DBA40C

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		PDF CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756

    MC34081BP

    Abstract: No abstract text available
    Text: M C34080 thru M C34085 g MOTOROLA High Slew R ate, W ide Bandw idth, JFET Input O perational Am plifiers T h e se d e v ic e s a re a n e w g e n e ra tio n o f high sp e e d J F E T in p u t m o n o lith ic o p e ra tio n a l a m p lifie rs . In n o v a tiv e d e s ig n c o n c e p ts a lo n g w ith J F E T


    OCR Scan     		PDF

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    1990- 2335 optocoupler

    Abstract: philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode
    Text: Philips S em iconductors S em ico n d u cto rs fo r Television and V id eo S ystem s Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors


    OCR Scan     		PDF BA481 SAA7197 SAA7199B TDA4680 TDA4685 pA733C LCD01 1990- 2335 optocoupler philips 3139 147 tv tuner TDA6101Q equivalent TDA3827 tda6100 ofw g 3201 ica v94 display OFW G 3352 BB515 pj 2309 smd diode

    transistor a660

    Abstract: burr-brown ota Operational Transconductance Amplifier pspice 331MHz OV sensors mttf
    Text: For Im s ü a te M i m i , Contact ïonr Local Salesperson B U R R -B R O W N I B OPA66O I Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS • WIDE BANDWIDTH: 700MHz • VIDEO/BROADCAST EQUIPMENT • HIGH SLEW RATE: 3000V/^s


    OCR Scan     		PDF OPA660 700MHz 400MHz OPA660 A660-1GC DEM-QPA660-2GC DEM-OPA660-3GC DEM-OPA660-4G DEM-OPA660-5G Li-407) transistor a660 burr-brown ota Operational Transconductance Amplifier pspice 331MHz OV sensors mttf

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW
    Text: DE I RF Devices Division ôfl55GE4 0D035fl7 1 TRW Electronic Components Group 8825024 T R W ELEK CMPNT, R F 89D 03587 D TRW2307 Microwave Power Transistor • * • • • C o m m o n B a se G o ld M etalized H erm etic 1 to 3 G H z “T X ” Screenabie


    OCR Scan     		PDF fl55G24 TRW2307 50j/F, TRW2304 50fjF, trw RF POWER TRANSISTOR trw rf transistor trw resistors trw rf semiconductors TRW MICROWAVE TRW2307 TRW CAP TRW2304 TRW 2003 transistor TRW

    Untitled

    Abstract: No abstract text available
    Text: ADC0882 National ÆM Semiconductor ADC0882 8-Bit 20 MSPS Flash A/D Converter General Description Key Specifications The ADC0882 is a monolithic flash Analog to Digital con­ verter capable of converting a video signal into a stream of 8-bit digital words at 20 MegaSamples Per Second MSPS .


    OCR Scan     		PDF ADC0882 ADC0882 TDC1048 ADC0882.

    34082P

    Abstract: 34084 op amp 34083P 34084P MC340
    Text: MC34080/MC35080 thru MC34085/MC35085 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA HIGH PERFORMANCE JFETINPUT OPERATIONAL AMPLIFIERS High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers These devices are a new generation of high speed JFET input monolithic


    OCR Scan     		PDF MC34080/MC35080 MC34085/MC35085 34082P 34084 op amp 34083P 34084P MC340

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503