BC237
Abstract: 2N3819 junction fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N–Channel 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs
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BSS123LT1
236AB)
CHARACTERIS218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
BC237
2N3819 junction fet
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6R099C6
Abstract: 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 IPP60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6
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IPx60R099C6
IPA60R099C6,
IPB60R099C6
IPP60R099C6
IPW60R099C6
6R099C6
6R099
6r099c6 mosfet
IPW60R099C6
IPx60R099C6
CoolMOS TC 6R099C6
IPA60R099C6
TO-247 FULLPAK Package
TRANSISTOR SMD MARKING CODE
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6R099C6
Abstract: CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPP60R099C6 IPW60R099C6 6R099* TO220
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6
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IPx60R099C6
IPA60R099C6,
IPB60R099C6
IPP60R099C6
IPW60R099C6
6R099C6
CoolMOS TC 6R099C6
6R099
6r099c6 mosfet
Diode SMD SJ 36
IPB60R099C6
transistor 6R099C6
IPW60R099C6
6R099* TO220
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6R099C6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6
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IPx60R099C6
IPA60R099C6,
IPB60R099C6
IPP60R099C6
IPW60R099C6
6R099C6
MOSFET TRANSISTOR SMD MARKING CODE A1
IPx60R099C6
IPW60R099C6
TRANSISTOR SMD MARKING CODE 604
IPB60R099C6
to247 pcb footprint
6R099
TRANSISTOR SMD MARKING CODE
IPA60R099C6
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Untitled
Abstract: No abstract text available
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6
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IPx60R099C6
IPA60R099C6,
IPB60R099C6
IPP60R099C6
IPW60R099C6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung
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FB20R06KL4B1
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FP20R06KL4
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FP20R06KL4
FP20R06KL4
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FS20R06XL4
Abstract: transistor daten
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS20R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage
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FS20R06XL4
FS20R06XL4
transistor daten
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FB20R06KL4B1
Abstract: ir igbt
Text: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung
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FB20R06KL4B1
FB20R06KL4B1
ir igbt
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Untitled
Abstract: No abstract text available
Text: PHD20N06T N-channel TrenchMOS transistor Rev. 01 — 22 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHD20N06T in SOT428 D-PAK .
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PHD20N06T
M3D300
PHD20N06T
OT428
MBK091
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FP20R06KL4
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FP20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung
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FP20R06KL4
FP20R06KL4
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FS20R06XL4
Abstract: INVERTER 50 kW
Text: Technische Information / technical information IGBT-Module IGBT-Modules FS20R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage
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FS20R06XL4
FS20R06XL4
INVERTER 50 kW
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung
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FB20R06KL4B1
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Gleichrichter
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung
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FB20R06KL4B1
Gleichrichter
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FB20R06KL4B1
Abstract: FB20R06KL4
Text: Technische Information / technical information IGBT-Module IGBT-Modules FB20R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung
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FB20R06KL4B1
FB20R06KL4B1
FB20R06KL4
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Untitled
Abstract: No abstract text available
Text: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
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PBHV9540Z
OT223
SC-73)
PBHV8140Z.
AEC-Q101
PBHV9540Z
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transistor 21789
Abstract: 0965 TRANSISTOR ATC 1595
Text: ERICSSON ^ PTE 10101 60 Watts, HF-1.0 GHz LDMOS Field Effect Transistor Description The 10101 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 60 w a tts m inim um o u tp u t power. N itride surface
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transistor 21789
Abstract: ERICSSON 10031 PTF 10031
Text: ERICSSON í PTF 10031 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10031 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface
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Opera10031
P4917-ND
P5276
transistor 21789
ERICSSON 10031
PTF 10031
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b=lE » b b S S IS l 002^154 HS1 IAPX BLV91 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile
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BLV91
OT-172)
00ET130
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TA7341P
Abstract: R/TA7341P
Text: TOSHIBA-, ELECTRONIC DE D Ë | cI0Iì7a47 DD171S4 S | ~ 02E 17 154 909 72 47 fO'SH IB A. E L É C T R Ò N IC 71 D TA7341P T-77-ZI INTERPROGRAM SENSOR 1C Unit in m m The TA7341P is an interprogram sensor IC designed 25.0 MA X for one-program-skipping Car Stereo or radio cassette
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DD171S4
TA7341P
T-77-ZI
TA7341P
TC9138P/TC9139P
150mA.
R/TA7341P
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H5052
Abstract: MAX1004
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other
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BUK107-50GL
H5052
MAX1004
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tda8380 power supply
Abstract: No abstract text available
Text: Preliminary specification Philips Semiconductors Integrated Circuits Control circuit for switched-mode power supplies TDA8380 G E N E R A L D E S C R IP T IO N T he T D A 8 3 8 0 is an integrated c irc u it intended fo r use as a c o n tro l c irc u it in low -cost switched m ode
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TDA8380
711002b
007T45fl
7110fl2b
tda8380 power supply
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mb7116
Abstract: MB7115 MB7116E
Text: FU JITSU PROGRAMMABLE SCHOTTKY 2048-B IT READ ONLY MEMORY MB7115E/H MB7116E/H/Y MB7115L MB7116L N ovem ber 19Ô7 E d itio n 2 .0 SCHOTTKY 2048-BIT DEAP PROM {512 WORDS x 4 BITS The Fujitsu MB 7115 and MB 7116 are high speed S c h o ttk y T T L e lectrically
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2048-B
MB7115E/H
MB7116E/H/Y
MB7115L
MB7116L
2048-BIT
7116E
mb7116
MB7115
MB7116E
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK107-50GL Logic level TOPFET_ _ DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for
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BUK107-50GL
up7-50GL
BUK107-50GL
1E-02
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