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    TRANSISTOR TO-92 2N5551 Search Results

    TRANSISTOR TO-92 2N5551 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-92 2N5551 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMALL SIGNAL HIGH VOLTAGE TRANSISTOR NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208


    Original     		PDF 2N5551 MIL-STD-202G,

    NPN SMALL SIGNAL TRANSISTOR

    Abstract: transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10
    Text: Small Signal High Voltage Transistor NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208


    Original     		PDF 2N5551 MIL-STD-202G, NPN SMALL SIGNAL TRANSISTOR transistor 2n5551 2N5551 transistor equivalent 2n5551 Transistor AH 10

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N5551 100uA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N5551

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551K TO – 92 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N5551K

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO-92 FEATURES •Switching and amplification in high voltage Applications such as telephony · 1. EMITTER Low current max. 600mA 2. BASE


    Original     		PDF 2N5551 600mA) CHARACT80 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)


    Original     		PDF 2N5551 600mA) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.180V)


    Original     		PDF 2N5551 600mA) 100MHz

    Transistors 2n5551

    Abstract: 2N5551
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range


    Original     		PDF 2N5551 30MHz Transistors 2n5551 2N5551

    Transys Electronics

    Abstract: transistor cb 180 2N5551
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5551 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM: 0.6 Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range


    Original     		PDF 2N5551 30MHz Transys Electronics transistor cb 180 2N5551

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR（ NPN ） TO-92 FEATURES •Switching and amplification in high voltage Applications such as telephony · 1. EMITTER Low current max. 600mA 2. BASE · High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF 2N5551 600mA) break80 100MHz

    transistor 2n5551

    Abstract: 2N5551-NPN 2N5551
    Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 160V • Collector Dissipation: PC max =625mW TO-92 ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5551 625mW Width300s, transistor 2n5551 2N5551-NPN 2N5551

    2N5551G

    Abstract: transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain „ APPLICATIONS 1 TO-92 * Telephone switching circuit * Amplifier „ ORDERING INFORMATION


    Original     		PDF 2N5551 OT-89 2N5551-x-AB3-R 2N5551-x-T92-B 2N5551-x-T92-K 2N5551L-x-AB3-R 2N5551L-x-T92-B 2N5551L-x-T92-K 2N5551G-x-AB3-R 2N5551G-x-T92-B 2N5551G transistor 2n5551 2N5551-NPN 2N5551 2N5551 circuit VCEO160V 2N5551-X-AB3-R C2N5551

    2N5551L

    Abstract: 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * High collector-emitter voltage: VCEO=160V * High current gain APPLICATIONS 1 * Telephone switching circuit TO-92 * Amplifier *Pb-free plating product number: 2N5551L


    Original     		PDF 2N5551 OT-89 2N5551L 2N5551-x-AB3-R 2N5551L-x-AB3-R 2N5551-x-T92-B 2N5551L-x-T92-B 2N5551-x-T92-K 2N5551L-x-T92-K 2N5551L 2N5551L-x-AB3-R 2N5551 circuit 2N5551 2N5551 transistor 2N5551-NPN Transistor TO-92 2N5551 2N5551 TO92 high voltage npn transistor SOT-89 2N5551 UTC

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified


    Original     		PDF 2N5551 QW-R201-002

    2N5551

    Abstract: No abstract text available
    Text: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified


    Original     		PDF 2N5551 QW-R201-002 2N5551

    bc 357 transistor pin details

    Abstract: 2N5551
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5551 TO- 92 CBE BC High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


    Original     		PDF ISO/TS16949 2N5551 25deg C-120 bc 357 transistor pin details 2N5551

    MARKING G3 Transistor

    Abstract: Transistor TO-92 2N5551 2N5401 2N5551
    Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic


    OCR Scan     		PDF 2N5551 2N5401 MIL-STD-202, 2N5551 100MHz 250nA, 10Hzto 300ns, DS11105 MARKING G3 Transistor Transistor TO-92 2N5551

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL BLBCTRON1CS LID . 2N5551 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package TO-92 * Collector-Emitter Voltage VCEO=160V * Collector Dissipation Pc MAX =625 mW ABSOLUTE MAXIMUM RATINGS at Tan*=25'c


    OCR Scan     		PDF 2N5551 100uA 250uA 10Hztol5

    Untitled

    Abstract: No abstract text available
    Text: SyriSEM i T O -92 Plastic Encapsulate Transistors 5YM5EM1 SEMICONDUCTOR 2N5551 TRANSISTOR NPN TO — 92 FEATURES Power dissipation PCM : 0 .6 2 5 W (Tamb=25 °C ) Collector current 1. EMITTER Icm : 0.6 A 2. BASE Collector base voltage V Operating and storage junction temperature range


    OCR Scan     		PDF 2N5551 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ck >=160V • Collector Dissipation: Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO Collector-Base Voltage Collector-Emitter \foltage


    OCR Scan     		PDF 2N5551 625mW 100/iA, 10//A, 100MHz 10Hzto

    transistor 1kt

    Abstract: No abstract text available
    Text: 2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR » Collector-Emitter Voltage: V c e o = 1 6 0 V • Collector Dissipation: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Sym bol Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N5551 625mW 250/iA, transistor 1kt

    vqe 14 display

    Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
    Text: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim


    OCR Scan     		PDF 2N5551 2N5401 MIL-STD-202, 100MHz 250nA, 300ps, DS11105 2N5551 vqe 14 display vqe 14 e led display vqb 200 d