2N5551-NPN
Abstract: No abstract text available
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier E A C
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2N5551
2N5401
MIL-STD-202,
100MHz
DS11105
2N5551-NPN
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DS1110-500
Abstract: 74LS DS1010 DS1110 DS1110E J-STD-020A
Text: Rev 0; 6/02 10-Tap Silicon Delay Line The DS1110 delay line is an improved replacement for the DS1010. It has ten equally spaced taps providing delays from 5ns to 500ns. The devices are offered in a standard 14-pin DIP, 16-pin SO, or 14-pin TSSOP. The DS1110 series delay lines provide a nominal accuracy of
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10-Tap
DS1110
DS1010.
500ns.
14-pin
16-pin
DS1110-500
74LS
DS1010
DS1110E
J-STD-020A
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4SO16
Abstract: 74FO4 74LS Series IC list DS1110-500 DS1110-50 74LS DS1010 DS1110 DS1110E J-STD-020A
Text: Rev 1; 11/03 10-Tap Silicon Delay Line The DS1110 delay line is an improved replacement for the DS1010. It has ten equally spaced taps providing delays from 5ns to 500ns. The devices are offered in a standard 16-pin SO or 14-pin TSSOP. The DS1110 series delay lines provide a nominal accuracy of ±5% or ±2ns,
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PDF
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10-Tap
DS1110
DS1010.
500ns.
16-pin
14-pin
DS1110
DS1110S
4SO16
74FO4
74LS Series IC list
DS1110-500
DS1110-50
74LS
DS1010
DS1110E
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: MICROCHIP TECHNOL OGY INC 22E D blD3SDl 00QM7T7 ñ 27HC64 M ic r o c h ip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance — 40ns Maximum Access Time • CMOS Technology For Low Power Consumption — 80mA Active Current
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00QM7T7
27HC64
27HC64
27C64
blD32Dl
27HC64L
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Transistor TO-92 2N5401
Abstract: No abstract text available
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Dim Min Max A 4.32 4.83 B 4.32 4.78
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OCR Scan
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2N5551
2N5401
MIL-STD-202,
100MHz
300ps,
DS11105
Transistor TO-92 2N5401
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Untitled
Abstract: No abstract text available
Text: & 27HC64 M icrochip 64K 8K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar Performance — 40ns Maximum Access Time The Microchip Technology Inc 27HC64 is a CMOS 64K bit ultraviolet light Erasable (electrically) Programm able • CMOS Technology For Low Power Consumption
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27HC64
DS11105D-7
27HC64
27HC64L
DS11105D-8
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vqe 14 display
Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
Text: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim
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2N5551
2N5401
MIL-STD-202,
100MHz
250nA,
300ps,
DS11105
2N5551
vqe 14 display
vqe 14 e led display
vqb 200 d
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MARKING G3 Transistor
Abstract: Transistor TO-92 2N5551 2N5401 2N5551
Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic
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OCR Scan
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PDF
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2N5551
2N5401
MIL-STD-202,
2N5551
100MHz
250nA,
10Hzto
300ns,
DS11105
MARKING G3 Transistor
Transistor TO-92 2N5551
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