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    TRANSISTOR TO-92 2N5401 Search Results

    TRANSISTOR TO-92 2N5401 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-92 2N5401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)


    Original     		PDF 2N5401 600mA) -50mA, 30MHz -10mA

    2n5401 transistor

    Abstract: 2n5401TRANSISTOR transistor 2N5401 2N5401 Transistor TO-92 2N5401
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE z Switching and amplification in high voltage z Applications such as telephony z Low current(max. 600mA) z High voltage(max.160v)


    Original     		PDF 2N5401 600mA) -50mA, 30MHz -10mA 2n5401 transistor 2n5401TRANSISTOR transistor 2N5401 2N5401 Transistor TO-92 2N5401

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5401 TRANSISTOR PNP 1. EMITTER FEATURES z Switching and Amplification in High Voltage z Applications such as Telephony z Low Current z High Voltage 2. BASE


    Original     		PDF 2N5401

    2N5401

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range


    Original     		PDF 2N5401 -10mA 30MHz 2N5401

    2N5401

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current A ICM : - 0.6 Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range


    Original     		PDF 2N5401 -10mA 30MHz 2N5401

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE


    Original     		PDF 2N5401 -150V 625mW QW-R201-001

    Untitled

    Abstract: No abstract text available
    Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE


    Original     		PDF 2N5401 -150V 625mW

    2N5401

    Abstract: No abstract text available
    Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE


    Original     		PDF 2N5401 -150V 625mW QW-R201-001 2N5401

    transistor 2n5401

    Abstract: transistor 2N5401L 2n5401l 2N5401 2n5401 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


    Original     		PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K transistor 2n5401 transistor 2N5401L 2n5401l 2N5401 2n5401 transistor

    TRANSISTOR 2n5401

    Abstract: 2N5401
    Text: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    Original     		PDF 2N5401 625mW Width300s, -120V, -10mA, -50mA, TRANSISTOR 2n5401 2N5401

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number


    Original     		PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K

    C2N5401

    Abstract: 2N5401 transistor 2N5401 of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 *Pb-free plating product number:2N5401L „ ORDERING INFORMATION Order Number


    Original     		PDF 2N5401 OT-89 -150V 2N5401L 2N5401-x-AB3-F-R 2N5401L-x-AB3-F-R 2N5401-x-T92-C-B 2N5401L-x-T92-C-B 2N5401-x-T92-C-K 2N5401L-x-T92-C-K C2N5401 2N5401 transistor 2N5401 of pnp transistor 2n5401

    2N5401L-x-T92-B

    Abstract: 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ 1 FEATURES SOT-89 * Collector-emitter voltage: VCEO = -150V * High current gain 1 TO-92 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N5401L-x-AB3-R


    Original     		PDF 2N5401 OT-89 -150V 2N5401L-x-AB3-R 2N5401G-x-AB3-R 2N5401L-x-T92-B 2N5401G-x-T92-B 2N5401L-x-T92-K 2N5401G-x-T92-K 2N5401L-x-T92-R 2N5401L Transistor TO-92 2N5401 of pnp transistor 2n5401

    transistor 5401

    Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
    Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor


    Original     		PDF 2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application

    Continental Device India Limited 2N5401

    Abstract: 2N5401
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


    Original     		PDF ISO/TS16949 2N5401 25deg C-120 Continental Device India Limited 2N5401 2N5401

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 TO-92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.


    Original     		PDF 2N5401 25deg C-120

    transistor 2n5401

    Abstract: 2N5401
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5401 9SA TO- 92 CBE High Voltage PNP Transistor For General Purpose And Telephony Applications.


    Original     		PDF 2N5401 25deg C-120 transistor 2n5401 2N5401

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR E 2N5401 TO-92 CBE BC High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS Ta=25deg C unless otherwise specified


    Original     		PDF 2N5401 25deg C-120

    MARKING G3 Transistor

    Abstract: Transistor TO-92 2N5551 2N5401 2N5551
    Text: 2N5551 NPN SMALL SIGNAL TRANSISTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier KM TO-92 Mechanical Data_ Case: TO-92, Plastic


    OCR Scan     		PDF 2N5551 2N5401 MIL-STD-202, 2N5551 100MHz 250nA, 10Hzto 300ns, DS11105 MARKING G3 Transistor Transistor TO-92 2N5551

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212

    2n5401 transistor

    Abstract: 2n5401TRANSISTOR 2N5401
    Text: N n n n m TO-92 Piasti -Encapsulate Transistors 2N5401 TRANSISTOR PNP TO-92 FEATURE Powe dissipation Pcm : 0.625 W (Tamb=25°C) Collecto cu ent : - 0.6 A Collecto -base voltage Icm 1.EMITTER 2.BASE V ( br)cbo : -160 V Ope ating and storage junction temperature range


    OCR Scan     		PDF 2N5401 -50mA -10mA 2n5401 transistor 2n5401TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: 2N5401 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO -92 • Collector-Emitter Voltage: V c e o = 150 V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF 2N5401 625mW Q025Q3Ã

    2N5401

    Abstract: No abstract text available
    Text: SAM S U N G SEMICONDUCTOR INC 2N5401 | 7^4142 0Q071Ô5 7 PNP EPITAXIAL SILICON TRANSISTOR T.-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veeo=160V TO-92 • Collector Di*sJpatlon:Pc m«x =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Unit


    OCR Scan     		PDF 2N5401 Vcco-160V 825mW 100/rA, T-29-21

    vqe 14 display

    Abstract: vqe 14 e led display 2N5401 2N5551 vqb 200 d
    Text: visHAY 2N5551 NPN SMALL SIGNAL TRANSISTOR y LITEMZI POWER SEMICONDUCTOR Features High Collector to Emitter Voltage Epitaxial Planar Die Construction Compliments PNP Type 2N5401 General Purpose High-Voltage Amplifier Gas Discharge Display Amplifier TO-92 Dim


    OCR Scan     		PDF 2N5551 2N5401 MIL-STD-202, 100MHz 250nA, 300ps, DS11105 2N5551 vqe 14 display vqe 14 e led display vqb 200 d