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    TRANSISTOR TO 204AA Search Results

    TRANSISTOR TO 204AA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO 204AA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor MJ2955

    Abstract: MJ2955 300 watts amplifier MJ2955 TRANSISTOR MJ2955
    Text: Silicon Power Transistor MJ2955 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary PNP Silicon Power Transistor F 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    MJ2955 O-204AA Transistor MJ2955 MJ2955 300 watts amplifier MJ2955 TRANSISTOR MJ2955 PDF

    MJ11015

    Abstract: No abstract text available
    Text: MJ11015 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI MJ11015 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA MAXIMUM RATINGS IE 30 A VCE -120 V


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    MJ11015 MJ11015 204AA PDF

    2N3055H

    Abstract: 2N3055H+RCA
    Text: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package


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    2N3055H O-204AA 2N3055H 2N3055H+RCA PDF

    power transistor 2n3055

    Abstract: transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055
    Text: Silicon Power Transistor 2N3055 Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F F F F Complementary NPN Silicon Power Transistor 15 Amp / 60 V device in TO-204AA [ TO-3 ] package


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    2N3055 O-204AA power transistor 2n3055 transistor 2N3055 2n3055 circuit 2N3055 TO-3 2N3055 PDF

    BU208A

    Abstract: No abstract text available
    Text: Silicon Power Transistor BU208A Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of televisions. Specification Fetaures : F Horizontal Deflection NPN Silicon Power Transistor F 5 Amp / 700 V device in TO-204AA [ TO-3 ] package


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    BU208A O-204AA BU208A PDF

    transistor bu208

    Abstract: BU208 TRANSISTOR 1300
    Text: Silicon Power Transistor BU208 Technical Data Typical Applications : These devices are designed for horizontal deflection output stages of large screen colour deflection circuits. Specification Fetaures : F High Voltage NPN Silicon Power Transistor F 5 Amp / 1300 V device in TO-204AA [ TO-3 ] package


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    BU208 O-204AA transistor bu208 BU208 TRANSISTOR 1300 PDF

    2N6052 equivalent

    Abstract: No abstract text available
    Text: 2N6051 and 2N6052 Available PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/501 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 12 amps and is military qualified up to a JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation.


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    2N6051 2N6052 MIL-PRF-19500/501 O-204AA O-204AA T4-LDS-0306, 2N6052 equivalent PDF

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


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    SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237 PDF

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    70/SOT Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 PDF

    MOTOROLA DATE CODE MARKING

    Abstract: marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    OT-23 MOTOROLA DATE CODE MARKING marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2 PDF

    A8A SC70-6

    Abstract: SOT323 A8A marking H2A sot-23 h2a transistors H2B sot23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2211LT1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    OT-23 A8A SC70-6 SOT323 A8A marking H2A sot-23 h2a transistors H2B sot23 PDF

    transistor 2N5458

    Abstract: BC237 BC848 2N930 NPN transistor FREE
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


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    Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 transistor 2N5458 BC237 BC848 2N930 NPN transistor FREE PDF

    BF245 TRANSISTOR

    Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.


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    OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJ4502 High−Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


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    MJ4502 100-Watts MJ802 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MJ802 High−Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —


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    MJ802 100-Watts MJ4502 PDF

    J802

    Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
    Text: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


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    MJ802 MJ4502 r14525 J802/D J802 MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502 PDF

    2SA835

    Abstract: transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE9780* Advance Information PNP Silicon Power Transistor *Motorola Preferred Device The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor.


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    MJE9780* MJE9780 220AB mAdc/10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA835 transistor D 1557 bu806 equivalent 2SD436 2SD669 equivalent BU108 TL 188 TRANSISTOR PNP 2Sd525 equivalent 2sa1046 2N6021 PDF

    MJ4502

    Abstract: MJ802 MJ802 MJ4502
    Text: ON Semiconductort MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •


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    MJ4502 MJ802 r14525 MJ4502/D MJ4502 MJ802 MJ802 MJ4502 PDF

    MJ802

    Abstract: MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802
    Text: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.


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    MJ802/D* MJ802/D MJ802 MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6285 SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Am plifier and Switching Applications. PACKAGE STYLE TO- 3/TO- 204AA Ie 2o A 4o A PEAK < o m MAXIMUM RATINGS


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    2N6285 204AA PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N6285 \ \ SILICON PNP-DARLINGTON POWER TRANSISTOR DESCRIPTION: The 2N6285 is a PNP Monolithic Power Darlington Transistor Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-3/TO-204AA U \ -J MAX. I MAXIMUM RATINGS 20 A 40 A PEAK


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    2N6285 2N6285 O-3/TO-204AA PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N6338 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6338 Power Transistor is Designed for General Purpose Switching and Amplifier Applications. PACKAGE STYLE TO- 3/TO-204AA U I *J MAX. I MAXIMUM RATINGS 25 A lc 50 A PEAK 100 V V ce 200 W @ Tc = 25 °C


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    2N6338 2N6338 3/TO-204AA PDF

    transistor tl 188

    Abstract: 92CS-27516
    Text: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor


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    BUX11A 92CS-27516 O-204AA RCA-BUX11A O-204AA 92CS-3227I transistor tl 188 92CS-27516 PDF