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    TRANSISTOR TM 1X Search Results

    TRANSISTOR TM 1X Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TM 1X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEDM7001

    Abstract: mosfet low vgs n-channel mosfet transistor low power CEDM7001E
    Text: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		PDF CEDM7001E CEDM7001E OT-883L 100mW CEDM7001E: 100mA 16-March CEDM7001 mosfet low vgs n-channel mosfet transistor low power

    Untitled

    Abstract: No abstract text available
    Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		PDF CEDM8001 100mW OT-883L CEDM8001: 100mA 29-November

    CEDM7001

    Abstract: No abstract text available
    Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		PDF CEDM7001 CEDM7001 OT-883L 100mW CEDM7001: 100mA 29-November

    CEDM7001

    Abstract: mosfet low vgs mosfet vgs 5v
    Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		PDF CEDM7001 CEDM7001 OT-883L 100mW CEDM7001: 100mA 31-July mosfet low vgs mosfet vgs 5v

    n-channel mosfet transistor low power

    Abstract: CEDM7001
    Text: Central CEDM7001E TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001E is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		PDF CEDM7001E CEDM7001E OT-883L 100mW CEDM7001E: 100mA 20-November n-channel mosfet transistor low power CEDM7001

    sot883l

    Abstract: CEDM7001
    Text: Central CEDM7001 TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for


    Original     		PDF CEDM7001 100mW OT-883L CEDM7001: 100mA 16-March sot883l

    CEDM8001

    Abstract: No abstract text available
    Text: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for


    Original     		PDF CEDM8001 CEDM8001 OT-883L 100mW CEDM8001: 100mA 16-March

    Untitled

    Abstract: No abstract text available
    Text: RY A N I CEDM7004 Central IM EL PR TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process,


    Original     		PDF CEDM7004 CEDM7004 OT-883L tp10s 400mA 200mA 100mA 16-June

    2N7269U

    Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
    Text: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology


    Original     		PDF 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U 200Volt, MIL-PRF-19500/603) 1x106 2N7269U IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U

    CEDM7004

    Abstract: No abstract text available
    Text: CEDM7004 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7004 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		PDF CEDM7004 CEDM7004 OT-883L tp10s 400mA 200mA 100mA

    p-channel mosfet transistor low power

    Abstract: mosfet low vgs CEDM8001 p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V
    Text: CEDM8001 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.


    Original     		PDF CEDM8001 CEDM8001 OT-883L 100mA 29-February p-channel mosfet transistor low power mosfet low vgs p-channel DMOS P-channel MOSFET VGS -25V P-channel power mosfet 30V

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet October 6, 2003 Document No: DS03-083 ver. 1.0 PDF name: microlynx_sip_3v-5.5v.pdf Austin MicroLynx SIP Non-isolated Power Modules: 3.0Vdc – 5.5Vdc input; 0.75Vdc to 3.3Vdc Output; 5A Output Current TM Features ƒ Delivers up to 5A output current


    Original     		PDF DS03-083 75Vdc x3001

    C3225X5R0J226V

    Abstract: AXH003A0X AXH003A0X4 SR-332
    Text: Data Sheet May 9, 2005 Austin MiniLynx SIP: Non-Isolated DC-DC Power Modules: 2.4 – 5.5Vdc input; 0.75Vdc to 3.63Vdc Output; 3A Output Current TM Features ƒ Directive 2002/95/EC RoHS compatible ƒ Delivers up to 3A output current ƒ Industry standard footprint


    Original     		PDF 75Vdc 63Vdc 2002/95/EC SR-332 x3001 DS04-040 C3225X5R0J226V AXH003A0X AXH003A0X4 SR-332

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet October 6, 2003 Document No: DS03-082 ver. 1.0 PDF name: microlynx_smt_3.3v-5v.pdf Austin MicroLynx SMT Non-isolated Power Modules: 3.0Vdc – 5.5Vdc input; 0.75Vdc to 3.3Vdc Output; 5A Output Current TM Features ƒ Delivers up to 5A output current


    Original     		PDF DS03-082 75Vdc x3001

    transistor m285

    Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
    Text: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness


    Original     		PDF 167A690 182A934 1x106 1x1014 1x109 1x10-11 1x1012 5962H92153 36-Lead 28-Lead transistor m285 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H M arch 1998 I L D M IC O N D U C TO R tm FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperS0T -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF FDN337N

    10N25

    Abstract: No abstract text available
    Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES


    OCR Scan     		PDF MTM10N25 MTP10N25 0J570 19XACE 30i0012 TQ-204AA 21A-04 O-220AB 10N25

    70910

    Abstract: transistor cny CNY17F-1X E91231
    Text: ISOCOM COMPONENTS LTD HôfibSlO QQQOSSM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


    OCR Scan     		PDF 46fibSlQ 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) 70910 transistor cny CNY17F-1X E91231

    CNY17F-1X

    Abstract: CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4
    Text: ISOCOM CO MP O N E N T S LTD HôfibSlO QQ QOS SM 4 • ISO 45E D CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X is OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT DESCRIPTION The CNY 17 is a optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and a


    OCR Scan     		PDF 46fibS10 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20mA) CNY17F-1X CNY17F-2X E91231 cny 17 ISOCOM lot number transistor cny CNY 27-4

    MOC302

    Abstract: amplifier - ATH 226 IRGB40S htr 1031 MOC3021 equivalent nomograph triac inverter P12FS
    Text: ANALOG DEVICES FEATURES Tem perature Sensor Includes 100 Ü Heater Heater Provides Power IC Emulation Accuracy ± 3 °C ty p . from —4 0 °C to +100°C Operation to +150° C 5 m V / C Internal Scale-Factor Resistor Program m able Tem perature Setpoints 20 mA Open-Collector Setpoint Outputs


    OCR Scan     		PDF TMP12* TMP12. TMP12 TIP-110, TMP12 MOC302 amplifier - ATH 226 IRGB40S htr 1031 MOC3021 equivalent nomograph triac inverter P12FS

    LM 7209

    Abstract: No abstract text available
    Text: ISOCOM COMPONENTS LTD 45E » • HôfibSlD GQDDE54 H ■ ISO 3 j CNY 17F-1X, CNY 17F-2X, CNY 17F-3X, CNY 17F-4X ~ ~ OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT “ ir : p S i t f l s§ ? f è S $ s DESCRIPTION The CNY 17 is a optically coupled isolator consisting


    OCR Scan     		PDF GQDDE54 17F-1X, 17F-2X, 17F-3X, 17F-4X IF-20m LM 7209

    TP52N06V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP52N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


    OCR Scan     		PDF MTP52N06V/D TP52N06V 21A-06 TP52N06V

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


    OCR Scan     		PDF 1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor

    rkm 34 transistor

    Abstract: RKM 24 sm transistor
    Text: SA NY O S E M I C O N D U C T O R CO R P 53E D ? cH 7 0 7 b 000^0^7 TIT » T S A J T - ^ 2 - 3 3 . I Ordering num br EN39661 CMOS LSI SAXYO LC5872, LC5873, LC5874, LC5876 4-bit Single-chip Microprocessors P r e lim in a r y OVERVIEW H ie LC5872. LC5873, LC5874 and LC5876 are 4-bit single-chip microprocessors designed for low-voltage


    OCR Scan     		PDF EN39661 LC5872, LC5873, LC5874, LC5876 LC5872. LC5874 LC5876 KBR-400B rkm 34 transistor RKM 24 sm transistor