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    TRANSISTOR TIC 701 Search Results

    TRANSISTOR TIC 701 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIC 701 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MMBT2222A 42E D B 7 ^ 4 1 4 2 000=1033 S BISM6K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C C h a ra c te ris tic Sym bol R a tin g U n it Collector-Base Voltage Veso 75 V Collector-Emitter Voltage


    OCR Scan     		PDF MMBT2222A

    Untitled

    Abstract: No abstract text available
    Text: KSB596 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER A PPLICATIO NS • C om plem ent to KSD 526 ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O Sym bol - 80 V C ollecto r-E m itte r Voltage V cE O - 80 V Em itter-Base Voltage


    OCR Scan     		PDF KSB596

    702 TRANSISTOR

    Abstract: 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701
    Text: mr c r i i h a im l MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MO NO LITHIC CONSTRUCTION W ITH BUILT-IN BASE-EMITTER RESISTORS • C o m p le m e n t to M J E 8 0 0 /8 0 1 /8 0 2 /8 0 3 ABSOLUTE M AXIMUM RATINGS


    OCR Scan     		PDF MJE700/701 MJE800/801/802/803 MJE702/703 702 TRANSISTOR 702 P TRANSISTOR MJE700 702 Z TRANSISTOR transistor 702 transistor k 702 BVCEO 2000 TRansistor 701

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    B553AC

    Abstract: mpa56c JUPD1701 TQC-231 MFI33
    Text: MOS INTEGRATED CIRCUIT /¿RDI 701 CT-113 P H A S E L O C K E D L O O P F R E Q U E N C Y S Y N T H E S IZ E R F M /A M D IG IT A L T U N IN G S Y S T E M C O N T R O L L E R C M O S LSI The UPD1701CT-113 is a single c h ip CM OS c o n tro lle r designed fo r using as a Phase Locked L o op F requency


    OCR Scan     		PDF CT-113 uPD1701CT-113 jUPD1701CT-113 B553AC mpa56c JUPD1701 TQC-231 MFI33

    KSA910

    Abstract: No abstract text available
    Text: KSA910 PNP EPITAXIAL SILICON TRANSISTOR DRIVER STAGE OF AUDIO AMPLIFIER HIGH VOLTAGE SWITCHING APPLICATIONS TO -92L • Com plem ent to KSC2310 • Collector-E m itter V oltage V Ceo * -15 0V • Output Capacitance: Co«“ 5 p F MAX ABSOLUTE MAXIMUM RATINGS (1*251 )


    OCR Scan     		PDF KSA910 KSC2310 KSA910

    samsung tv

    Abstract: 4142
    Text: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSC1520A O-202 80MHz GQG77fe samsung tv 4142

    germanium transistor asy

    Abstract: 18y4 ASY48 21 k 1564 y703
    Text: ESC D • Û235b05 00040Û7 r - 37 - 0 7 b H SIE6 ASY48 ASY70 PNP Transistors for Switching Applications - SIEMENS A K T IE N G E S E LL S C H A F Not for new design A S Y 48 and A S Y 70 are alloyed germanium PN P transistors in 1 A 3 DIN 41871 case


    OCR Scan     		PDF 235b05 ASY48 ASY70 18-Y48-D 18-Y48-E 18-Y48-F 60118-Y81 0118-Y70-D 18-Y70-E 62quency germanium transistor asy 18y4 21 k 1564 y703

    GP1A34LC

    Abstract: No abstract text available
    Text: GP1A34LC SHARP GP1A34LC OPIC Photointemipter with Con­ nector • Features ■ O utlne Dim ensions 1. Snap-in mounting type 2. Can be mounted on 2 different thickness boards 1.0mm, 1.6mm . 3. Uses 3-pin connector terminal 4. High sensing accuracy (Slit width : 0.5mm)


    OCR Scan     		PDF GP1A34LC GP1A34LC

    2SK73

    Abstract: 2sk736
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK736 The 2SK736 is N-Channel MOS Field E ffect Power Transistor PACKAG E DIM EN SIO N S designed fo r solenoid, m o to r and lamp driver. in millimeters inches FEATUR ES • Gate Drive — Logic level —


    OCR Scan     		PDF 2SK736 RS39726 1986M 2SK73

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    BF 234 transistor

    Abstract: transistor KSC2786 RF POWER TRANSISTOR 100MHz samsung tv
    Text: Inc SAMSUNG SEMICONDUCTOR KSC2786 i*e ° aoofibM q | ~ r - jj~ fy NPN EPITAXIAL SILICON TRANSISTOR a • r TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Cumnt-CMIn-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz


    OCR Scan     		PDF KSC2786 600MHz -22dB 100MHz O-92S KSC2786 100MHz T-31-17 BF 234 transistor transistor RF POWER TRANSISTOR 100MHz samsung tv

    power semi conductor

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR I NC 14É KSA636 | 7 cî k , 4 m 2 0007407 1 PNP EPITÂXIAL SILICON TRANSISTOR T -33-17 LOW FREQUENCY POWER AMPLIFIER » • • • Complement to KSC1098 • High Collector-Base Vbltage V cbo = -70V Collector Current lc = - 2 A Collector Dissipation PC=10W T c =25°C


    OCR Scan     		PDF KSA636 KSC1098 GQG77fe power semi conductor

    bd142

    Abstract: No abstract text available
    Text: Power Transistors * _ X - 3 3 _ - 1 3 BD142 File Number HARRIS SEMICOND SECTOR - B7E< D High-Power Silicon N-P-N Transistor B M3D2S71 DGSGlDa 701 BIH AS •TERMINAL DESIGNATIONS General-Purpose Device For Commercial Use Features: • M a x im u m -sa fe -a re a -o f-o p e ra tio n curves


    OCR Scan     		PDF BD142 M3D2S71 92CSH2M7K1 23C6RI 92CS-12326RI

    135055

    Abstract: 2sc828a D 711 N 60 T MN8201SW panasonic MN8201sw a7z transistor
    Text: PANASONIC INDL/ELEK -CICJ 72 6 9 3 2 8 52 P A N A S O N I C DE'Jb'jaafiSa [I00L.701 & J - I N D U E L E C T R O N IC_ 7 2C 0 6 7 0 1 .D y-41 -55 MN8201SW zyy M N8201SW C P D E l f t í U t S I ^ / C P D C H A R G E P R IM IN G D E V IC E S o lid -S ta te


    OCR Scan     		PDF MN8201SW MN820TSW 280TV 190TV MN8201SW i35as2 T-41-55 135055 2sc828a D 711 N 60 T panasonic MN8201sw a7z transistor

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer


    OCR Scan     		PDF MB3604 MB3604 16-LEAD DIP-16P-M04)

    TRANSISTOR 1G

    Abstract: No abstract text available
    Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,


    OCR Scan     		PDF 8080-1G 8080-1G44 MIL-STD-202, TRANSISTOR 1G

    TP50N

    Abstract: 06vl
    Text: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP50N06VL TMOS V Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0-032 OHM


    OCR Scan     		PDF MTP50N06VL/D TP50N 06vl

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP50N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50N06VL TMOS V Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		PDF MTP50N06VL/D MTP50N06VL 21A-06

    Untitled

    Abstract: No abstract text available
    Text: KSD471A NPN EPITAXIAL SILICON TRAN SISTO R AUDIO FREQUENCY POW ER AM PLIFIER TO-92 • Complement to KSB564A • Collector Current lc” 1A • Collector Dissipation Pc=800m W ABSO LU TE MAXIMUM RATINGS TA«25t: Characteristic Sym bol Collector-Base Voltage


    OCR Scan     		PDF KSD471A KSB564A

    k455

    Abstract: BUK455 BUK455-200A BUK455-200B T0220AB
    Text: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 0D30b50 K455-200A/B T0220AB BUK455 -200A -200B -ID/100 k455 BUK455-200A BUK455-200B T0220AB

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    2SK799

    Abstract: 2sk79 NEC 701
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK799 The 2SK799 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches Suitable fo r switching power supplies, actuater controls,


    OCR Scan     		PDF 2SK799 2SK799 RS39726 1986M 2sk79 NEC 701