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    TRANSISTOR THE 6 MHZ Search Results

    TRANSISTOR THE 6 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR THE 6 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2224-6L

    Abstract: No abstract text available
    Text: 2224-6L 6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz GENERAL DESCRIPTION The 2224-6L is a COMMON BASE transistor capable of providing 6 Watts, Class C output power over the band 2200-2400 MHz. The transistor includes input prematching for full Broadband capability. Gold metalization and


    Original     		2224-6L 2224-6L PDF

    1417 transistor

    Abstract: max 1417 1417-6A
    Text: 1417-6A 6 Watts, 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION The 1417-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1400-1700 MHz band. This transistor is specifically designed for telemetry and telecommunications


    Original     		417-6A 417-6A 1417 transistor max 1417 1417-6A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


    Original     		OT-26 QW-R218-020 PDF

    1014-6A

    Abstract: No abstract text available
    Text: 1014-6A 6 Watts, 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LV-1 The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1000-1400 MHz band. This transistor is specifically designed for microwave broadband applications.


    Original     		014-6A 55LV-1 014-6A 1014-6A PDF

    1014-6A

    Abstract: No abstract text available
    Text: 1014-6A R2 1014-6A 6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 Watts of CW or pulsed RF output power across the band 1000 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed


    Original     		014-6A 014-6A 1014-6A PDF

    10A060

    Abstract: 20989 78561 MAG 1832 55FT
    Text: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes


    Original     		10A060 10A060 20989 78561 MAG 1832 55FT PDF

    transistor Y2

    Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
    Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    Original     		FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6 PDF

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    Original     		FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80 PDF

    sot23-6 package marking d619

    Abstract: marking D619 d619 zxtd09n50de6ta
    Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.


    Original     		ZXTD09N50DE6 ZUMT619 ZXTD09N50DE6TA ZXTD09N50DE6TC OT23-6 OT23-6 sot23-6 package marking d619 marking D619 d619 PDF

    d619

    Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
    Text: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.


    Original     		ZXTD09N50DE6 ZUMT619 OT23-6 OT23-6 ZXTD09N50DE6TA ZXTD09N50D: d619 sot23-6 package marking d619 transistor d619 data ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC PDF

    FMBA0656

    Abstract: transistor marking E2 Supersot 6 transistor marking c1
    Text: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.


    Original     		FMBA0656 300mA. fmba0656 lwpPr33 transistor marking E2 Supersot 6 transistor marking c1 PDF

    PTB 20181

    Abstract: No abstract text available
    Text: e PTB 20181 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original     		1-877-GOLDMOS 1301-PTB PTB 20181 PDF

    20258

    Abstract: IEC-68-2-54 1301P
    Text: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original     		IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB 20258 IEC-68-2-54 1301P PDF

    20144

    Abstract: IEC-68-2-54 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: e PTB 20144 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    Original     		IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB 20144 IEC-68-2-54 35 W 960 MHz RF POWER TRANSISTOR NPN PDF

    PTB 20181

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20181 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output power


    OCR Scan     		915-960MHz) PTB 20181 PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON PTB 20051 6 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor Description Key Features • • • • • The 20051 is a class A, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14651513 MHz frequency band. It is rated at 6 Watts minimum


    OCR Scan     		40rrA 270rrA 40ttA PDF

    PTB20144

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20144 6 Watts, 915 - 960 MHz Cellular Radio RF Power Transistor Description Key Features • • • • The 20144 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 6 Watts minimum output


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    OCR Scan     		FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23 PDF

    JOHANSON 2951

    Abstract: MRF5174 IR 21025 8ASF U028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line 2W - 4 0 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON .d e s ig n e d prim arily for w ideband large-signal driver and pre­ driver am plifier stages in the 2 6 0 -6 0 0 M H z frequency range.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    OCR Scan     		FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020 PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20181 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20181 is an NPN, common emitter RF power transistor intended for 25 Vdc class AB operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF

    transistor R1d

    Abstract: ericsson 20144
    Text: ERICSSON ^ PTB 20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20144 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		IEC-68-2-54 Std-002-A transistor R1d ericsson 20144 PDF

    29Z3

    Abstract: Transistor CODE FR m7am
    Text: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided


    OCR Scan     		BCY67 BCY67 29Z3 Transistor CODE FR m7am PDF

    MPSA06 transistor

    Abstract: MPSA56 TRANSISTOR
    Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT MPSA06 Small Signal Transistors NPN TO-92 0.181 (4 .6 ) FEATURES 0 .1 4 2 ( 3 . 6 ) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MPSA56 is recommended.


    OCR Scan     		MPSA06 MPSA56 OT-23 MMBTA06 MPSA06 transistor MPSA56 TRANSISTOR PDF