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    TRANSISTOR T23 Search Results

    TRANSISTOR T23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor with marking 4266

    Abstract: BF547W equivalent transistor D 2497
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the SO T23 version, BF547.


    OCR Scan     		PDF OT323 BF547W BF547. BF547W MBC870 OT323. transistor with marking 4266 equivalent transistor D 2497

    E2p 28 transistor

    Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING T op view PIN DESCRIPTION


    OCR Scan     		PDF BFS17 E2p 28 transistor 55C40 BFS17A E2p device marking E2p transistor

    E2p device marking

    Abstract: BFS17 BFS17A
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION


    OCR Scan     		PDF BFS17 E2p device marking BFS17A

    Untitled

    Abstract: No abstract text available
    Text: bbSB'lBl 0DES8bl 03b « A P X Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBT3640 N AUER PHILIPS/DISCRETE DESCRIPTION b?E D PINNING P N P general purpose switching transistor in a SO T23 package. PIN DESCRIPTION Code: V25 1


    OCR Scan     		PDF PMBT3640

    BFS17

    Abstract: MSB003 BFS17 E1 marking code 10 sot23 MARKING CODE E1
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m unications equipm ent.


    OCR Scan     		PDF BFS17 MSB003 MEA397 BFS17 MSB003 BFS17 E1 marking code 10 sot23 MARKING CODE E1

    transistor 2n

    Abstract: 3904
    Text: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor


    OCR Scan     		PDF 2N3904 15000kHz 500rr transistor 2n 3904

    MSB003

    Abstract: BFS17 RF TRANSISTOR SOT23 5 MARKING CODE 16 transistor sot23 E1P MARKING transistor 04 N 70 BP transistor E1p
    Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m un ica tio n s equipm ent.


    OCR Scan     		PDF BFS17 MSB003 MEA397 RF TRANSISTOR SOT23 5 MARKING CODE 16 transistor sot23 E1P MARKING transistor 04 N 70 BP transistor E1p

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF QQ2T474

    K 3115

    Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA
    Text: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.


    OCR Scan     		PDF 001S7QÃ BF550 bbS3T31 0Q15710 BF550 T-31-15 K 3115 transistor marking code 325 bf550R transistor jt PHILIPS 1980 MARKING SA transistor transistor marking SA

    TRANSISTOR C 557 B

    Abstract: BFT25 transistor 1548 b
    Text: bbS3T31 Philips Sem iconductors Q0E?53bD bTS ^BAPX - N AUER P H I L I P S / D I S C R E T E Product specification b?E ]> NPN 2 GHz wideband transistor DESCRIPTION c BFT25 PINNING NPN transistor in a plastic SO T23 envelope. PIN It Is primarily intended for use in RF


    OCR Scan     		PDF bbS3T31 BFT25 TRANSISTOR C 557 B BFT25 transistor 1548 b

    t2369

    Abstract: No abstract text available
    Text: Central Sem icon du ctor Corp. C M P T2369 DESCRIPTION: NPN SILICON TRANSISTOR The C EN TR AL SEM IC O N D U C TO R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching


    OCR Scan     		PDF T2369 CMPT2369 OT-23 100mA 100MHz t2369

    BCV47 philips

    Abstract: JJ SOT23 BCV27 BCV47
    Text: • btS3*ì31 0024537 Ifl? H A P X N AMER PHILIPS/DISCRETE b?E D BCV27 BCV47 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SO T23 envelope. P-N-P complement is B C V 26/46. QUICK REFERENCE DATA BCV27 Collector-emitter voltage open base


    OCR Scan     		PDF btS3T31 BCV27 BCV47 BCV26/46. BCV47 philips JJ SOT23 BCV47

    Philips film capacitors 27 pf

    Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
    Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized


    OCR Scan     		PDF BLW60C 00b35b2 7Z772S6 7Z77255 Philips film capacitors 27 pf trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670

    programmable unijunction transistor

    Abstract: "Programmable Unijunction Transistor" ph a5 transistor
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor


    OCR Scan     		PDF BRY61 BRY61 MGL167 115002/00/03/pp8 programmable unijunction transistor "Programmable Unijunction Transistor" ph a5 transistor

    124ET

    Abstract: PDTA124ET
    Text: DISCRETE SEMICONDUCTORS PDTC124ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET


    OCR Scan     		PDF PDTC124ET PDTC124ET SCA63 15002/00/05/pp8 124ET PDTA124ET

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PDTC114TT NPN resistor-equipped transistor Objective specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC114TT


    OCR Scan     		PDF PDTC114TT PDTC114TT PDTA114TT. 114TT SCA63 5002/00/03/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J


    OCR Scan     		PDF 2PA1774J 2PA1774J SC-89 SCA63 5002/00/02/pp8

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


    OCR Scan     		PDF 711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PMST2369 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING


    OCR Scan     		PDF PMST2369 T2369 MAM062 115002/00/03/pp8

    2P transistor

    Abstract: l43 transistor
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING


    OCR Scan     		PDF 2PC4617J 2PC4617J SC-89 SCA60 115104/00/01/pp8 2P transistor l43 transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF MMBT5401

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT4403 FEATURES


    OCR Scan     		PDF PMBT4403 PMBT4401. PMBT4403 115002/00/03/pp8

    PMBT4401

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4401 NPN switching transistor Product specification Supersedes data of 1997 May 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN switching transistor PMBT4401 FEATURES


    OCR Scan     		PDF PMBT4401 PMBT4401 PMBT4403. 115002/00/03/pp8