la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor with marking 4266
Abstract: BF547W equivalent transistor D 2497
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the SO T23 version, BF547.
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OT323
BF547W
BF547.
BF547W
MBC870
OT323.
transistor with marking 4266
equivalent transistor D 2497
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E2p 28 transistor
Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor
Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING T op view PIN DESCRIPTION
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BFS17
E2p 28 transistor
55C40
BFS17A
E2p device marking
E2p transistor
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E2p device marking
Abstract: BFS17 BFS17A
Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION
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BFS17
E2p device marking
BFS17A
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Untitled
Abstract: No abstract text available
Text: bbSB'lBl 0DES8bl 03b « A P X Philips Semiconductors Product specification PNP 1 GHz switching transistor PMBT3640 N AUER PHILIPS/DISCRETE DESCRIPTION b?E D PINNING P N P general purpose switching transistor in a SO T23 package. PIN DESCRIPTION Code: V25 1
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PMBT3640
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BFS17
Abstract: MSB003 BFS17 E1 marking code 10 sot23 MARKING CODE E1
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m unications equipm ent.
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BFS17
MSB003
MEA397
BFS17
MSB003
BFS17 E1
marking code 10 sot23
MARKING CODE E1
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transistor 2n
Abstract: 3904
Text: _ 2N3904 Small Signal Transistor NPN T O - 2 2 6 A A (TO -9 2 ) 0.181 (4.6) - * 0.142(3.6) «— Features_ • N P N Silicon Epitaxial Pla n ar Transistor for sw itching and am plifier applications. • A s com plem entary type, the P N P transistor
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2N3904
15000kHz
500rr
transistor 2n
3904
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MSB003
Abstract: BFS17 RF TRANSISTOR SOT23 5 MARKING CODE 16 transistor sot23 E1P MARKING transistor 04 N 70 BP transistor E1p
Text: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic S O T23 package. 2 1 APPLICATIONS • A w ide range of RF applications such as: - M ixers and oscillators in TV tuners - RF com m un ica tio n s equipm ent.
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BFS17
MSB003
MEA397
RF TRANSISTOR SOT23 5
MARKING CODE 16 transistor sot23
E1P MARKING
transistor 04 N 70 BP
transistor E1p
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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QQ2T474
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K 3115
Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA
Text: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.
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001S7QÃ
BF550
bbS3T31
0Q15710
BF550
T-31-15
K 3115
transistor marking code 325
bf550R
transistor jt
PHILIPS 1980
MARKING SA transistor
transistor marking SA
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TRANSISTOR C 557 B
Abstract: BFT25 transistor 1548 b
Text: bbS3T31 Philips Sem iconductors Q0E?53bD bTS ^BAPX - N AUER P H I L I P S / D I S C R E T E Product specification b?E ]> NPN 2 GHz wideband transistor DESCRIPTION c BFT25 PINNING NPN transistor in a plastic SO T23 envelope. PIN It Is primarily intended for use in RF
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bbS3T31
BFT25
TRANSISTOR C 557 B
BFT25
transistor 1548 b
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t2369
Abstract: No abstract text available
Text: Central Sem icon du ctor Corp. C M P T2369 DESCRIPTION: NPN SILICON TRANSISTOR The C EN TR AL SEM IC O N D U C TO R CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching
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T2369
CMPT2369
OT-23
100mA
100MHz
t2369
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BCV47 philips
Abstract: JJ SOT23 BCV27 BCV47
Text: • btS3*ì31 0024537 Ifl? H A P X N AMER PHILIPS/DISCRETE b?E D BCV27 BCV47 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic SO T23 envelope. P-N-P complement is B C V 26/46. QUICK REFERENCE DATA BCV27 Collector-emitter voltage open base
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btS3T31
BCV27
BCV47
BCV26/46.
BCV47 philips
JJ SOT23
BCV47
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Philips film capacitors 27 pf
Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized
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BLW60C
00b35b2
7Z772S6
7Z77255
Philips film capacitors 27 pf
trimmer 3-30 pf
TL 2222
BLW60C
Philips film capacitors polystyrene
b32s
philips carbon film resistor
z670
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programmable unijunction transistor
Abstract: "Programmable Unijunction Transistor" ph a5 transistor
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor
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BRY61
BRY61
MGL167
115002/00/03/pp8
programmable unijunction transistor
"Programmable Unijunction Transistor"
ph a5 transistor
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124ET
Abstract: PDTA124ET
Text: DISCRETE SEMICONDUCTORS PDTC124ET NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET
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PDTC124ET
PDTC124ET
SCA63
15002/00/05/pp8
124ET
PDTA124ET
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PDTC114TT NPN resistor-equipped transistor Objective specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 Apr 16 PHILIPS PHILIPS Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC114TT
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PDTC114TT
PDTC114TT
PDTA114TT.
114TT
SCA63
5002/00/03/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 Philips Semiconductors 1999 May 04 PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J
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2PA1774J
2PA1774J
SC-89
SCA63
5002/00/02/pp8
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transistor tt 2222
Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.
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711002b
GGb27fi7
BLU99
BLU99/SL
OT122A)
BLU99/SL
OT122D)
transistor tt 2222
TT 2222 npn
TRIMMER capacitor 5-60 pF
TT 2222
ic TT 2222
4312 020 36642
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PMST2369 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 05 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING
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PMST2369
T2369
MAM062
115002/00/03/pp8
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2P transistor
Abstract: l43 transistor
Text: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING
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2PC4617J
2PC4617J
SC-89
SCA60
115104/00/01/pp8
2P transistor
l43 transistor
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Untitled
Abstract: No abstract text available
Text: MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature
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MMBT5401
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification PNP switching transistor PMBT4403 FEATURES
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PMBT4403
PMBT4401.
PMBT4403
115002/00/03/pp8
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PMBT4401
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4401 NPN switching transistor Product specification Supersedes data of 1997 May 07 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN switching transistor PMBT4401 FEATURES
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PMBT4401
PMBT4401
PMBT4403.
115002/00/03/pp8
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