Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK543-60A/B
BUK543
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BUK543
Abstract: BUK543-60A BUK543-60B TTA10
Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack
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BUK543-60A/B
-SOT186
BUK543
DS10NÃ
BUK543-60A
BUK543-60B
TTA10
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK444-200A/B
BUK444
-200A
-200B
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BUK445-100A
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK445-100A/B
BUK445
-100A
-100B
BUK445-100A
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK445-60A/B
BUK44S
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK446-800A/B
BUK446
-800A
-800B
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Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK441-100A/B
BUK441
-100A
-100B
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transistor BUK444-500B
Abstract: BUK444-500B
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK444-500B
transistor BUK444-500B
BUK444-500B
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EUK442
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK442-100A/B
EUK442
-100A
-100B
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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B 647 AC transistor
Abstract: uav specification transistor 2TH
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK452-60A/B
BUK472-60A/B
BUK472
T186A
B 647 AC transistor
uav specification
transistor 2TH
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BUK445
Abstract: BUK445-60A BUK445-60B
Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711002b
BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
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BUK441
Abstract: BUK441-60A BUK441-60B 3909
Text: T Ï2 & - 0 ? Philips Components Data sheet status Preliminary specification d ate of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.
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PINNING-SOT186
BUK441-60A/B
711D0Eb
BUK441
711002b.
00MMSb3
BUK441-60A
BUK441-60B
3909
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TRANSISTOR 1FU
Abstract: BUK444 BUK444-200A BUK444-200B
Text: PHILIPS INTERNATIONAL bSE 3> • 7110fl2b 0Db3Rtil S3T ■ PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK444-200A/B
-SOT186
TRANSISTOR 1FU
BUK444
BUK444-200A
BUK444-200B
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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BU1508DX
Abstract: SOT166
Text: N AMFR PHILIPS/DISCRETE b^E 3> • bbSB^l DÜ2Ô333 33T ■ APX Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
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BU1508DX
OT186A;
OT186
BU1508DX
SOT166
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BUK445-600B
Abstract: 100-P
Text: PHILIPS INTERNATIONAL b5E » B 711065b DDbMQll 7b3 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in
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BUK445-600B
-SOT186
BUK445-600B
100-P
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BUK445
Abstract: BUK445-60A BUK445-60B IT48
Text: PHILIPS INTER NAT IONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
IT48
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BUK441
Abstract: BUK441-60A BUK441-60B
Text: -7 ^ 3 9 -O Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK441-60A/B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope.
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PINNING-SOT186
BUK441-60A/B
711002b
BUK441
7110fl2fc.
00MMSb3
BUK441-60A
BUK441-60B
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BUK444-600B
Abstract: 100-P 003US
Text: N AMER PHILIPS/DISCRETE bTE D m bbSBTai 0030540 TOO * A P X Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK444-600B
-SOT186
bbS3T31
0D3D544
BUK444-600B
100-P
003US
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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DD3DS35
BUK444-500B
bb53331
bbS3131
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BUK444-400B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE D • 711D6Sti D0fci3^bti Dll M P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711D6Sti
BUK444-400B
-SOT186
BUK444-400B
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BUK445-500B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062b
BUK445-500B
-SOT186
BUK445-500B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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bbS3R31
BUK445-400B
bbS3T31
bbS3131
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