TRANSISTOR T 927
Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to
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T-13/4
TRANSISTOR T 927
965 transistor
transistor D 4515
transistor t13
transistor b 1655
0280 218 065
ASTM-D-4066
a 933 transistor
ASTM-D4066
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T13005
Abstract: STT13005 0016114E JESD97 st 125mA dc dc NPN POWER TRANSISTOR "SOT-32"
Text: STT13005 High voltage fast-switching NPN power transistor General features • NPN bipolar transistor ■ Medium voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications
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STT13005
OT-32
T13005
STT13005
0016114E
JESD97
st 125mA dc dc
NPN POWER TRANSISTOR "SOT-32"
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Untitled
Abstract: No abstract text available
Text: STT13005FP High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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T13005
Abstract: T-13005 STT13005 Date Code Marking STMicroelectronics ELECTRONIC BALLAST transistor DIAGRAM
Text: STT13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005
OT-32
T13005
T-13005
STT13005
Date Code Marking STMicroelectronics
ELECTRONIC BALLAST transistor DIAGRAM
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ELECTRONIC BALLAST transistor DIAGRAM
Abstract: STT13005FP 15663
Text: STT13005FP High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005FP
OT-32FP
ELECTRONIC BALLAST transistor DIAGRAM
STT13005FP
15663
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Untitled
Abstract: No abstract text available
Text: STT13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005
OT-32
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T13005
Abstract: STT13005 0016114E JESD97
Text: STT13005 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low
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STT13005
OT-32
T13005
STT13005
0016114E
JESD97
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transistor sockets
Abstract: transistor pin socket mil-m-14, 3pin transistor through 2211 9 PIN PC MOUNT TUBE SOCKET BE WALDES TRUARC
Text: Sockets SERIES 22 TRANSISTOR SOCKET FEATURES • Sockets for JETEC Transistors and Similar Packaged Devices LAMP SOCKET FEATURES • Sockets for the Popular Sizes of Miniature Lamps • Secondary Use: Pencil Tube Socket DIMENSIONS Transistor Sockets In Inches and millimeters
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transistor L6
Abstract: BLY92C BLY92 PL 431 transistor
Text: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
OT-120.
7z68949
transistor L6
BLY92C
BLY92
PL 431 transistor
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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B35AP
Abstract: No abstract text available
Text: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The
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bbS3S31
BFQ34T
ON4497)
B35AP
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am
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BLW77
28The
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BUK455-100A
Abstract: BUK455 BUK455-100B T0220AB
Text: PHILIPS INTERNATIONAL bSE D • 711062b 00b4081 067 BIPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
ID/100
BUK455-100A
BUK455-100B
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
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D1571
Abstract: AA0463 st cpcap zy 406 D157 DSP56300 DSP56301 G30-88 G38-87 series T212 data
Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56301 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56301 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this
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DSP56301
AA0500
b3b72MA
D1571
AA0463
st cpcap
zy 406
D157
DSP56300
G30-88
G38-87
series T212 data
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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Untitled
Abstract: No abstract text available
Text: i i N ANER PHILIPS/DISCRETE b=JE » bb53T31 0DSfllb5 D67 2N5088 APX SILICON PLANAR EPITAXIAL TRANSISTOR NPN small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary type is 2N5086. QUICK REFERENCE DATA
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bb53T31
2N5088
2N5086.
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BUK445-500B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 1^53*131 b'îE D 0D3DS7Q PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK445-500B
-SOT186
yv-10
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Untitled
Abstract: No abstract text available
Text: • hb53131 0D2SS44 204 BIAPX N AMER PHILIPS/DISCRETE BSP205 b7E ]> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended fo r use in relay, high-speed and line-transformer drivers.
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hb53131
0D2SS44
BSP205
OT223
hb5313
002S5M7
MCA848
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TRANSISTOR 40
Abstract: BUK474-800A
Text: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK474-800A/B
BUK444-800A/B
711002b
BUK474
-800A
-800B
T-39-09
BUK474-800A/B
0044b33
TRANSISTOR 40
BUK474-800A
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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BUK474
Abstract: BUK474-800A BUK474-800B 3909
Text: Philips Components Data sheet status Prelim inary specification date of issue March 1991 - 7 ^ 3 9 -— C f? BUK474-800A/B PowerMOS transistor Replaces B U K 4 4 4 -8 0 0 A /B PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUK444-800A/B
PINNING-SOT186A
BUK474-800A/B
711002b
BUK474
-800A
-800B
BUK474-800A
BUK474-800B
3909
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