Untitled
Abstract: No abstract text available
Text: • hb53131 0D2SS44 204 BIAPX N AMER PHILIPS/DISCRETE BSP205 b7E ]> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended fo r use in relay, high-speed and line-transformer drivers.
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hb53131
0D2SS44
BSP205
OT223
hb5313
002S5M7
MCA848
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h a 431 transistor
Abstract: transistor w 431 RZB12250Y transistor 431 N
Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 OD1S5Ô7 D ■ RZB12250Y r - 'iZ '-is ' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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RZB12250Y
h a 431 transistor
transistor w 431
RZB12250Y
transistor 431 N
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BYV22
Abstract: No abstract text available
Text: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are
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bb53T31
BYV22
BYV22â
btiS3T31
00105T1
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D1407
Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance
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BUZ54_
bfa53131
BUZ54
T-39-13
D1407
BUZ54
t03 package transistor pin dimensions
MC 140 transistor
2sc406
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optocoupler 357
Abstract: S 357 OPTOCOUPLER 357 optocoupler SV-04 F pj 899 diode 7z14 SL5504
Text: SL5504 _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits. Features • High o u tp u t/in p u t DC current transfer ratio
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SL5504
DD3SS64
optocoupler 357
S 357 OPTOCOUPLER
357 optocoupler
SV-04 F
pj 899 diode
7z14
SL5504
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE » • bb53T31 □D3D5TD 53b ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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bb53T31
O220AB
BUK452-60A/B
BUK452
-60Bn-source
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BYX99-300
Abstract: BYX99 BYX99-300R connector 10-32UNF AV1125
Text: BYX99 SERIES N AMER PHILIPS/DISCRETE SSE D B ^53*131 DOSSfibS - T -O Ì-Ì7 ' RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal po la rity cathode to stud : BYX99-300 to 1200.
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BYX99
BYX99-300
BYX99-300R
1200R.
10-32UNF
BYX99
7Z72S49
connector 10-32UNF
AV1125
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BDT41
Abstract: BDT41A BDT41B BDT42 TIP41
Text: SSE D N AMER PHILIPS /DI SCRETE • 11 1^53=531 0Qlei713 □ ■ BDT41;A BDT41B;C I T - 33 -II SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in general purpose amplifier and switching applications. The T IP41 series is an equivalent type. P-N-P complements are B D T 4 2 series.
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BDT41
BDT41B
TIP41
BDT42
T0-220AB.
7Z82918
T-33-11
BDT41A
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DIODE 804
Abstract: 16045TV PBYR16045TV M33 thermal fuse PBYR16040TV M33 fuse PBYR16035TV PBYR16045T tp 806 M33 thermal
Text: 5SE D a [,1=53=131 Q D 2 3 D Q 1 U tV tL U h 'M tN I 7 PBYR16035TV PBYR16040TV PBYR16045TV U A IA T h is data sheet c o n ta in s advance in fo rm a tio n and sp e cificatio n s are subject to change w it h o u t notice. N AN ER PHILIPS/DISCRETE 7 = 0 3 -2 !
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QD23D01
PBYR16035TV
PBYR16040TV
PBYR16045TV
PBYR16035
16045TV
M1246
PBYR16045TV
DIODE 804
M33 thermal fuse
M33 fuse
PBYR16045T
tp 806
M33 thermal
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