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    TRANSISTOR SOT23 CR Search Results

    TRANSISTOR SOT23 CR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SOT23 CR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23


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    PDF FMMT491Q J-STD-020 MIL-STD-202, DS37009

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


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    PDF FMMT591Q J-STD-020 DS37010

    K1 transistor

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.


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    PDF FMMT413 J-STD-020 MILSTD-202, DS33083 K1 transistor

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound


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    PDF FMMT415 FMMT417 AEC-Q101 J-STD-020 FMMT415-FMMT417 DS33084

    STT817

    Abstract: st17 SOT-23-6LTSOP-6
    Text: STT817 PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS CHARGE POWER SWITCH FOR MOBILE PHONE ■ DESCRIPTION The device is manufactured using Epitaxial Planar Technology. SOT23-6L TSOP6 INTERNAL SCHEMATIC DIAGRAM


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    PDF STT817 OT23-6L OT23-6L STT817 st17 SOT-23-6LTSOP-6

    MMBT5401

    Abstract: No abstract text available
    Text: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data •   Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching  Case: SOT23  Case material: molded plastic, “Green” molding compound


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    PDF MMBT5401 MMBT5551 J-STD-020 AEC-Q101 MIL-STD-202, DS30057 MMBT5401

    K1M 103

    Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
    Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary PNP Types Available BC856 BC858  Case material: molded plastic, “Green” molding compound


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    PDF BC846A-BC848C BC856 BC858) AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 K1M 103 AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 45V  Case: SOT23  IC = 800mA High Continuous Collector Current  Case Material: molded plastic, “Green” molding compound


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    PDF BCW66H 800mA 300mV 100mA BCW68H J-STD-020 AEC-Q101 DS33003

    BFS17A

    Abstract: MSB003 E2p transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


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    PDF BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor

    k3b transistor

    Abstract: BC858C
    Text: BC856A-BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Complementary NPN Types Available BC846 BC848  Case material: molded plastic, “Green” molding compound


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    PDF BC856A-BC858C BC846 BC848) AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS112072 k3b transistor BC858C

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


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    PDF BFS17A September1995 MSB003 R77/02/pp9

    K1p TRANSISTOR

    Abstract: No abstract text available
    Text: MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction • • Complementary PNP Type: MMBT2907A • • Ideal for Low Power Amplification and Switching Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound


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    PDF MMBT2222A MMBT2907A AEC-Q101 J-STD-020 MIL-STD202, DS30041 K1p TRANSISTOR

    ic 7495

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.


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    PDF ZXTP25060BFH -85mV ZXTN25060BFH AEC-Q101 DS33374 ic 7495

    k5c transistor

    Abstract: 103 k5c TRANSISTOR K5C
    Text: BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT23  Epitaxial Planar Die Construction  Case Material: Molded Plastic, “Green” Molding Compound  Complementary NPN Types Available BC817


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    PDF BC807-16/-25/-40 BC817) J-STD-020 AEC-Q101 DS11208 k5c transistor 103 k5c TRANSISTOR K5C

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17 NPN 1 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


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    PDF BFS17 MSB003 R77/02/pp8

    SOT23 JEDEC standard orientation

    Abstract: SOT23 JEDEC standard MO-223A c 3421 transistor SOT23 JEDEC standard orientation pad size JEDEC 95 sot packages MO-193D 193d Amkor G600 SC sot23
    Text: LEADFRAME data sheet SOT / SC Features: Thermal Resistance: Standard Outline Transistor SOT23 and Single Chip (SC70) Packages: Amkor’s 1.0 mm thick, 3, 5, 6, and 8 lead SOT23 and 5 and 6 lead SC70 packages offer gullwing lead, subminiature, SMT performance


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    PDF MO-193D. SOT23 JEDEC standard orientation SOT23 JEDEC standard MO-223A c 3421 transistor SOT23 JEDEC standard orientation pad size JEDEC 95 sot packages MO-193D 193d Amkor G600 SC sot23

    BC848A

    Abstract: No abstract text available
    Text: BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary PNP Types: BC856 BC858   For switching and AF Amplifier Applications Case: SOT23 Case material: molded plastic, “Green” molding compound


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    PDF BC846A-BC848C BC856 BC858 AEC-Q101 J-STD-020 MIL-STD-202, BC846A BC848C DS11108 BC848A

    Untitled

    Abstract: No abstract text available
    Text: BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion   Complementary NPN Types: BC846 BC848   For switching and AF Amplifier Applications Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound


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    PDF BC856A-BC858C BC846 BC848 AEC-Q101 J-STD-020 MIL-STD-202, BC856A BC858C DS11207

    FMMT458

    Abstract: fmmt458ta 400V 100MA NPN SOT23
    Text: A Product Line of Diodes Incorporated FMMT458 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 400V • Case: SOT23 • IC = 225mA high Continuous Collector Current • UL Flammability Rating 94V-0 • ICM = 1A Peak Pulse Current


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    PDF FMMT458 225mA 500mW 100mA FMMT558 AEC-Q101 J-STD-020 MILSTD-202, DS33088 FMMT458 fmmt458ta 400V 100MA NPN SOT23

    E2p 28 transistor

    Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


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    PDF BFS17A MSB003 E2p 28 transistor transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003

    BFT93

    Abstract: BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23


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    PDF BFT93 BFT93 BFR93 application note bfr93 GHz PNP transistor BFR93A MSB003 transistor BFR93

    BFS17A

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


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    PDF BFS17A September1995 MSB003 BFS17A MSB003

    BFT25

    Abstract: MSB003 MEA909
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23


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    PDF BFT25 MSB00ny BFT25 MSB003 MEA909

    4 phase stepper motor

    Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
    Text: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for


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    PDF FMMT618 OT223 FMMT619 OT223 10-20mV 4 phase stepper motor 12v transformer fx3311 ir remote control transmitter BCP54, BCX54 zetex product BCX54 LL5818