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    TRANSISTOR SL 431 Search Results

    TRANSISTOR SL 431 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SL 431 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BLV91

    Abstract: ferroxcube 1988 mda406 MDA401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in


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    BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401 PDF

    122d transistor

    Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector PDF

    MDA380

    Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352" PDF

    SL 100 NPN Transistor

    Abstract: SL 100 NPN Transistor base emitter collector blv99 transistor sl 100
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES BLV99/SL PIN CONFIGURATION • Emitter-ballasting resistors for an optimum temperature profile


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    BLV99/SL OT172D MSB007 MBB01 SL 100 NPN Transistor SL 100 NPN Transistor base emitter collector blv99 transistor sl 100 PDF

    SL 100 NPN Transistor base emitter collector

    Abstract: mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz


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    BLT92/SL SL 100 NPN Transistor base emitter collector mda301 BLT92 MDA300 SL 100 NPN Transistor SL 100 power transistor PDF

    SL 100 NPN Transistor

    Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
    Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.


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    00L2b71 BLT91/SL OT-172D) 7110fl2b D0bSb77 SL 100 NPN Transistor blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


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    bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.


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    DQ28761 BLT92/SL OT122D) PDF

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


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    711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


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    BLV91/SL OT-172D) PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 0D2B774 565 « A P X BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.


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    bbS3T31 0D2B774 BLT91/SL OT-172D) PDF

    philips rf choke ferrite

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.


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    BLT93/SL OT122D) 7Z24076 7Z24078 philips rf choke ferrite PDF

    B303D

    Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
    Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


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    BLV91/SL OT-172D) 711005b DGb3034 BLV91/SL B303D TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.


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    BLV90/SL OT-172D) PDF

    TRIMMER capacitor 160 pF

    Abstract: 7z97443 PTFE trimmer capacitor 4312 020 36642
    Text: bSE » Q 711002b QOtiBDlM 5ÖS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in m obile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


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    BLV90/SL OT-172D) TRIMMER capacitor 160 pF 7z97443 PTFE trimmer capacitor 4312 020 36642 PDF

    ferrite 4312

    Abstract: SL 100 NPN Transistor
    Text: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.


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    711002b BLT93/SL OT122D) 7Z24076 7Z24077 7Z24078 ferrite 4312 SL 100 NPN Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE hTE bbS3T31 □DE'inb b4fl D Product specification Philips S em iconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures


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    bbS3T31 BLV99/SL OT172D PINNING-SOT172D 7Z94684 PDF

    ma-6008

    Abstract: No abstract text available
    Text: bSE D El 711Qä2b 0Gb3D14 5öS HIPHIN BLV90/SL _ PHILIPS INTERNATIONAL_ _ U H F POWER TRANSISTOR N PN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 9 0 0 M H z band. Features: • diffused emitter-ballasting resistors for an optim um temperature profile.


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    BLV90/SL OT-172D) 711002b ma-6008 PDF

    SL 100 NPN Transistor base emitter collector

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl □□ETl'lb b4ä H A P X _ Product specification Philips Semiconductors_ BLV99/SL UHF power transistor PIN CONFIGURATION FEATUR ES • Emitter-ballasting resistors for an optimum temperature profile


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    BLV99/SL OT172D UB8012 OT172D 7Z94G85 SL 100 NPN Transistor base emitter collector PDF

    Si 122D

    Abstract: 122d transistor BLU11/Si 122D
    Text: N AMER PHILIPS/DISCRETE b^Z b b 5 3 c]31 G0Eflfl03 10b BIAPX T> BLU11/SL J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.


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    bb53c G0Eflfl03 BLU11/SL OT-122D) BLU11/SL Si 122D 122d transistor BLU11/Si 122D PDF

    sot172

    Abstract: No abstract text available
    Text: Philips Semiconductors 711065b 0 0 b 3D^3 'ìQ l B B P H IN product specification UHF power transistor PHILIPS BLV99/SL bSE ]> INTERNATIONAL FEATURES PIN CONFIGURATION • Emitler-baflasting resistors for an optimum temperature profile • Gold metallization ensures


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    BLV99/SL OT172 -SOT172D MDB012 7Z94685 sot172 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE ^ 5 3 1 3 1 0QSfl7b7 345 H A P X BLT90/SL b^E D A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 M H z communications band. This device has been designed specifically for class-B operation.


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    BLT90/SL OT-172D) bb53T31 PDF

    ITT 2222 npn

    Abstract: ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 BLU99 ferroxcube wideband hf choke SOT122A
    Text: N AMER P H I L I P S / D I S C R E T E blE D • bbâB^Bl DDEfifiRQ btH ■ IAPX Jl BLU 99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.


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    BLU99/SL BLU99 OT122A) BLU99/SL OT122D) ITT 2222 npn ITT 2222 A itt 2222 blu99 transistor SL 100 NPN Transistor "2222 352" 4312 020 36642 ferroxcube wideband hf choke SOT122A PDF

    SL 100 NPN Transistor

    Abstract: transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119
    Text: P H IL IP S bSE I N T ^ ’-i D O 711002b 00b2fab4 A bCH H P H I N BLT90/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.


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    711002b 00b2fab4 BLT90/SL OT-172D) 00b2b70 SL 100 NPN Transistor transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119 PDF