uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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Corpora1-504-2860
X10679EJEV0SG00
sc5 s dc 6v relay
P48D-70-600
UPD66010
UPD7752
AC03E
uPD7520
uPA1601
UPD70208H
uPD72020
uPD16503
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marking s70
Abstract: marking k70
Text: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data •
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BS870
OT-23
OT-23,
MIL-STD-202,
500mA
DS11302
marking s70
marking k70
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SiP4282DVP-1-T1-E3
Abstract: SC-75 SiP4282 SiP4282-1-T1-E3 SiP4282-3-T1-E3 SC75 JAN p-channel mosfet transistor low power
Text: New Product SiP4282 Vishay Siliconix 1 A Slew Rate Controlled Load Switch in PPAK SC75-6 DESCRIPTION FEATURES The SiP4282 is a P-Channel MOSFET power switch IC designed for high-side load switching applications. The output switching transistor is a P-Channel MOSFET device that
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SiP4282
SC75-6
SiP4282-3
08-Apr-05
SiP4282DVP-1-T1-E3
SC-75
SiP4282-1-T1-E3
SiP4282-3-T1-E3
SC75
JAN p-channel mosfet transistor low power
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transistor s72
Abstract: S72 Transistor KS621K40A41 transistor b 1417 transistor s70 powerex ks62
Text: PUMEVZGf KS621K40A41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power
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KS621K40A41
Amperes/1000
transistor s72
S72 Transistor
KS621K40A41
transistor b 1417
transistor s70
powerex ks62
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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PDF
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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BUK444-400B
Abstract: No abstract text available
Text: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in
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GQ30S3D
BUK444-400B
OT186
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Untitled
Abstract: No abstract text available
Text: KS621K40A41 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1BOO 412 925-7272 Single Darlington Transistor Module 400 Amperes/1000 Volts O U T L I N E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in
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KS621K40A41
15697-1BOO
Amperes/1000
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PDF
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2N5943 equivalent
Abstract: 2N5943 JOHANSON 2951 Stackpole ferrite
Text: MOTOROLA SC X S T R S / R F 4bE D • b3b?2S4 0014103 7 MOTOROLA ■ ■SEMICONDUCTOR TECHNICAL DATA I flOTb P 3 I- 2 3 2N5943 The RF Line 1.2 Gite - 6 0 mAdc NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILICON . . . designed specifically for broadband applications requiring low
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2N5943
b3b7S54
2N5943 equivalent
2N5943
JOHANSON 2951
Stackpole ferrite
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PDF
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BFY45
Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
Text: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for
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BFY45
BFY45
60206-Y45
BFY 39 transistor
Q60206-Y45
1250-kW
transistor BFY45
BFy 90 transistor
BFY4
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PDF
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MRF260
Abstract: MRF262 MRF260 motorola B 647 AC transistor S0235
Text: I MOT OROL A SC XSTRS/R MbE F D b3b?2SM omMsa? MOTOROLA - SEMICONDUCTOR TECHNICAL DATA 3 3 *2» - 0*0 MRF260 The R F Line SW 1 3 6 -1 7 5 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d esigned fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li
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MRF260
MRF261
MRF262
MRF264
MRF260
MRF260 motorola
B 647 AC transistor
S0235
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IMIT TC2
Abstract: Mosfet 2n7000 2N7002-702 2N7002 MARKING 712 mosfet motor dc 48v NDS7002A-712 702 TRANSISTOR sot-23 "ON Semiconductor" 2N7002 NDS7002A 2N7000
Text: Semiconductor March 1993 2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third
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2N7000/2N7002/NDF7000A/NDS7002A
IMIT TC2
Mosfet 2n7000
2N7002-702
2N7002 MARKING 712
mosfet motor dc 48v
NDS7002A-712
702 TRANSISTOR sot-23
"ON Semiconductor" 2N7002
NDS7002A
2N7000
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ] QM400HA-2HB • Ic f • • • • Collector current.400A V C EX Coliector-ernitter voltage 1000V hFE DC current gain. 750
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QM400HA-2HB
E80276
E80271
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CP Clare RELAY
Abstract: ITC117P BS7002 16pin 617
Text: CP dare ITC117P CORPORATION ITC117P Integrated Telecom Circuit DESCRIPTION The Integrated Telecom Circuit, Model ITC117P, features the com bined circuitry for: • Form A solid state relay for use as a hookswitch ■ Bridge rectifier ■ Darlington transistor
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ITC117P
ITC117P
ITC117P,
120mA
47jiF
CP Clare RELAY
BS7002
16pin 617
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PDF
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591 ISSUE 3 - OCTOBER 1995_ O FEATURES * Low Equivalent on resistance RcE sat =3 ®m iî a t 1A* COMPLEMENTARY TYPE- FMMT491 PARTMARKING DETAIL - 591 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER
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FMMT591
FMMT491
-500mA,
-50mA,
100MHz
100mA
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2N7002
Abstract: 2N7000 FAIRCHILD 2N7002 2N700 2n7002 12 2N7002 FAIRCHILD 2N7002A 2N7000 MOSFET 100C NDS7002A
Text: Novem ber 1995 FAIRCHILD M IC D N D U C T O R 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high
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2N7000
2N7002
NDS7002A
400mA
OT-23,
NDS7002A
2N7002A
FAIRCHILD 2N7002
2N700
2n7002 12
2N7002 FAIRCHILD
2N7000 MOSFET
100C
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PDF
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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PDF
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Untitled
Abstract: No abstract text available
Text: BS870 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown -i g; Top View ip "gr i! It 9 5 lflS Pin configuration
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BS870
OT-23
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Untitled
Abstract: No abstract text available
Text: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h -A T TOP! VIEW B C 1 Mechanical Data Case: SOT-23, Molded Plastic
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BS870
OT-23
OT-23,
MIL-STD-202,
DS11302
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PDF
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Untitled
Abstract: No abstract text available
Text: N o vem b er 1995 FAIRCHILD M ICONDUCTQR i 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,
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2N7000
2N7002
NDS7002A
400mA
/NDS7002A
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PDF
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k70 sot 23
Abstract: Marking s70 BS870 DS11302 transistor k70
Text: BS870 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWERSEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h - A T TOP! VIEW B Mechanical Data Case: SO T-23, Molded Plastic
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BS870
OT-23,
MIL-STD-202,
OT-23
DS11302
BS870
k70 sot 23
Marking s70
transistor k70
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 Pin Transistor Output Hermetically Sealed Ceramic Optocoupler Isocom Lid supplies high reliability devices or applications requiring an operaling t e m p e r a ture range of - 5 5 ° C to + 1 2 5 “ C (e.g.military applications . Devices supplied have completed rigorous
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0S9000,
reqiiircM11
0/IS09000/r
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