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    TRANSISTOR S44 Search Results

    TRANSISTOR S44 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC6210

    Abstract: PBSS4320X PBSS5320X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Dec 15 2004 Nov 03 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS4320X SC-62) SCA76 R75/03/pp12 SC6210 PBSS4320X PBSS5320X

    PBSS4320X

    Abstract: PBSS5320X Transistor s44 MLE372
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product specification Supersedes data of 2003 Jun 25 2003 Dec 15 Philips Semiconductors Product specification 20 V, 3 A NPN low VCEsat (BISS) transistor


    Original     		PDF M3D109 PBSS4320X SC-62) SCA75 R75/02/pp11 PBSS4320X PBSS5320X Transistor s44 MLE372

    S44 MARKING

    Abstract: SOT89 MARKING CODE B2 Transistor s44
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Objective specification 2003 Jun 25 Philips Semiconductors Objective specification 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X FEATURES QUICK REFERENCE DATA


    Original     		PDF M3D109 PBSS4320X SC-62) SCA75 613514/01/pp8 S44 MARKING SOT89 MARKING CODE B2 Transistor s44

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X


    Original     		PDF M3D109 PBSS4320X SC-62) R75/03/pp12

    S44 MARKING

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X


    Original     		PDF M3D109 PBSS4320X SC-62) R75/03/pp12 771-PBSS4320X135 S44 MARKING

    PBSS4320X

    Abstract: PBSS5320X sc6210
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4320X 20 V, 3 A NPN low VCEsat BISS transistor Product data sheet Supersedes data of 2003 Dec 15 2004 Nov 03 NXP Semiconductors Product data sheet 20 V, 3 A NPN low VCEsat (BISS) transistor PBSS4320X


    Original     		PDF M3D109 PBSS4320X SC-62) R75/03/pp12 PBSS4320X PBSS5320X sc6210

    pn0307

    Abstract: BSPD50N03S2-07 SPD50N03S2-07
    Text: SPD50N03S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 V RDS on 7.3 m ID 50 A P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430


    Original     		PDF SPD50N03S2-07 P-TO-252-3-11 P-TO-252-3-11 Q67040-S4430 PN0307 BSPD50N03S2-07, SPD50N03S2-07 pn0307 BSPD50N03S2-07

    transistor DK RN

    Abstract: BUV26
    Text: 'J.E.iis.u , One. O' 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUV26 Switchmode Series NPN Silicon Power Transistor Designed for high-speed applications, Features • Switchmode Power Supplies


    Original     		PDF BUV26 Z25/6IMJ293/ transistor DK RN BUV26

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    IR s27

    Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
    Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics  Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages.  Adjustable programming - suitable for different remote code formats.


    Original     		PDF HT48RA0-5 HT622x) HT48RA0-5 20SSOP) IR s27 infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor

    AN804

    Abstract: TP0202T
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 For applications information see AN804.


    Original     		PDF TP0202T AN804. S-44505--Rev. 06-Sep-94 AN804 TP0202T

    TA 7061

    Abstract: TP0202T S4450
    Text: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D


    Original     		PDF TP0202T O-236 S-44505--Rev. 06-Sep-94 TA 7061 TP0202T S4450

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    BFR96

    Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
    Text: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


    OCR Scan     		PDF ON4487) BFQ32. BFR96 711DflSb r-31-23 711Dfl2b BFR96 BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96

    Untitled

    Abstract: No abstract text available
    Text: KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S in g /S D d rH n Q tO fl Transistor Module 200 Amperes/1000 Volts OU TLIN E DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K20 Amperes/1000

    KS621K20

    Abstract: ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417
    Text: m w m oc KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S M g lG D â tH n g tO fl Transistor Module 200 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K20 Amperes/1000 KS621K20 ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417

    UHF amplifier module

    Abstract: power BJT gp bjt BGY205
    Text: Philips Semiconductors Objective specification UHF amplifier module BGY205 FEATURES DESCRIPTION • Single 6 V nominal supply voltage The BGY205 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit


    OCR Scan     		PDF BGY205 BGY205 PINNING-SOT321B OT321B. UHF amplifier module power BJT gp bjt

    2SK687

    Abstract: DDD3710
    Text: SANYO SEMICONDUCTOR CORP ÍEE DI 7cH707ki □□□S44b S T - V M l 2SK687 N -Channel M O S Silicon Field-Effect Transistor 2052A 2464A High Speed Power Switching Applications Features Low-on resistance, very high-speed switching, converters Absolute Maxim» Ratings at Ta=25°C


    OCR Scan     		PDF 2SK687 QOaS44b 0DGB752 DDD3710

    fa08a

    Abstract: VS-2500 transistor 902 E113A FT45
    Text: A E fi CORP 17E D OOETMSb OOGTM'i? 7 BU 902 ;iì3 iK s K e le c tro n ic CfeatveTechnotogtes Silicon NPN Power Transistor r - 3 S 'l3 A p p lio atio n : Sw itching mode power supply Features: • In triple diffusion technique • Short sw itching time • Glass passivation


    OCR Scan     		PDF curreT-33-13 T-33-13 002TM2b fa08a VS-2500 transistor 902 E113A FT45

    NE64535

    Abstract: NE64500 nec08 2SC2585 NE645 2SC2273 0/2SC2585 mig mag 200 NE64508 s2212
    Text: S bE N E C/ CALIFORNIA NEC D • b M 2 7 L tm 0 D 0 2 M 2 2 bDfl H N E C C NE64500 NE64508 NE64535 NE64587 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURED DESCRIPTION AND APPLICATIONS • HIGH fr fr = 8.5 GHz The NE645 series of NPN silicon transistors is designed for


    OCR Scan     		PDF ogo2M22 T-31-H NE64500 NE64508 NE64535 NE64587 NE64500 NE645 nec08 2SC2585 2SC2273 0/2SC2585 mig mag 200 s2212