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    TRANSISTOR S250 Search Results

    TRANSISTOR S250 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S250 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFQ28

    Abstract: Q62702-F527 CJCO D 843 Transistor
    Text: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods


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    fl23Sfc Q62702-F527 BFQ28 Q62702-F527 CJCO D 843 Transistor PDF

    P3H7

    Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
    Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


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    fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma PDF

    ABE 422

    Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
    Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


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    pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 PDF

    AF4505

    Abstract: transistor BF 502 Q U 31U transistor s250
    Text: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .


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    023SbOS QQ45GS BF502 AF4505 transistor BF 502 Q U 31U transistor s250 PDF

    zo 107 NA P 611

    Abstract: TRANSISTOR 2SC 2026 642p 2sc 643
    Text: 2SC D m fl23Sb05 QQQ4b43 T « S I E G — *- — — •» «* w n u u Low Noise NPN Silicon Microwave Transistor UJ? t 0 2 G H z ~ ?<5r. n^643 _ BFQ 60 D '7 ^ '3 l ~ £ 3 _ SIEMENS A K T IE NGES EL LS CH AF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal


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    fl23Sb05 QQQ4b43 Q62702-F655 023SbQS BFQ60 zo 107 NA P 611 TRANSISTOR 2SC 2026 642p 2sc 643 PDF

    acrian RF POWER TRANSISTOR

    Abstract: acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 S250-50 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc
    Text: 0182998 ACRIAN INC 97D 01153 D -33-15 DE •dlfla'na 00 01153 7 GENERAL DESCRIPTION The S250-50 is a 50V 250 W PEP NPN silicon RF power transistor designed for 1.5 to 30 MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.


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    S250-50 S250-50-3 Icq-100 acrian RF POWER TRANSISTOR acrian RF POWER TRANSISTOR 300 w TRANSISTOR S250 acrian ic S250-50-2 S250-50-3 S25-50 le200 acrian inc PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE ¡^25021!Y V MULTI OPTOCOUPLER SERIES *4 FEATURES_ DESCRIPTION_ • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN • HIGH CURRENT TRANSFER RATIO CTR: 2000% TYP P S2502-1, -2, -4 and PS2502L-1, -2, -4 are optically coupled


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    S2502-1, PS2502L-1, PS2502-1, PS2502L-1 PS2502L-2 10ieH PS2502L-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE £s2502L1V V MULTI PHOTOCOUPLER SERIES DESCRIPTION_ FEATURES_ • P S 2 5 0 2 -1 , -2, -4 and P S 2 5 0 2 L -1 , -2, -4 are optically coupled HIGH ISOLATION VO LTAG E


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    s2502L1V PS2502L-1 PS2502L-2 PS2502L-4 b427525 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    S2506

    Abstract: PS2506
    Text: HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2506-1, -2, -4 PS2506L-1, -2, -4 FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN PS2506-1, -2 and -4 and PS2506L-1, -2 and -4 are optically coupled isolators containing a GaAs light emitting diode and


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    PS2506-1, PS2506L-1, PS25061, PS2506L-2 PS2506L-4 S2506 PS2506 PDF

    S2508

    Abstract: No abstract text available
    Text: 5/UjyNPNJ:e5'*5;? l/7ls-*Bh5y5sZ5> SILICON NPN o EPITAXIAL PLANAR TRANSISTOR U H P-L ^ 9 o U H P - ^ L Ban d Low N o i e e A m p l i f i e r t» X in m INDUSTRIAL APPLICATIONS Applications, Unit i n o High Speed Switching Applications. i r N F=2.0dB S tl f = 5 0 0 MHz)


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    PDF

    Q62702-F494

    Abstract: Al203-Keramik Transistor BFR 14 F494 BFR14B S250
    Text: N P N -S iliz iu m -P la n a r-M ik ro w e lle n -T ra n s is to r BFR 14 B Vorläufige Daten B F R 14 B ist ein epitaktischer N P N -Silizium -Planar-M ikrow ellentransistor. Der Transistor eignet sich durch seine kleine Rauschzahl, hohe Verstärkung und geringe Verzerrung für


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    BFR14B Q62702-F494 Q62702-F494 Al203-Keramik Transistor BFR 14 F494 S250 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET PHOTO COUPLERS PS2503 -1, - 2 , -3, -4 P S2503L-1, -2, >3, -4 NEC ELECTRON DEVICE HIGH ISOLATION VOLTAGE MULTI PHOTO COUPLER SERIES D E S C R IP T IO N PS2503-1, -2, -3, -4 and PS2503L-1, -2, -3,-4 series are optically coupled isolator containing a G a A s light emitting diode and


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    PS2503 S2503L-1, PS2503-1, PS2503L-1, PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF

    tiris

    Abstract: tiris rfid transistor s2000 texas instruments transistor manual S2510 tiris s2000 tiris trm manual magnetic transmitter 134.2 TIRIS s2510 tiris antenna
    Text: S2510 READER INTRODUCTION Introduction March 1998 March 1998 Introduction Contents 1. General .5 1.1 About this Manual .5


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    S2510 tiris tiris rfid transistor s2000 texas instruments transistor manual tiris s2000 tiris trm manual magnetic transmitter 134.2 TIRIS s2510 tiris antenna PDF

    LF847

    Abstract: Seven Transistor Array PNP l5 transistor PNP N5 npn transistor CS2500 CS3200 lf-621 LF853 CS4000 transistor PNP L5
    Text: -RRY SEMI CONDUCT OR CORP 57E J -Db7S5b 3 D QE2 1 A - " r - m 037 -s i Chapter 1 - Getting Started With your circuit simulations and worst case analysis done, you are ready to begin the layout phase of your


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    3Q0E21A 20b7SSb LF625 LF626 50b755b GD0221b LF627 LF847 Seven Transistor Array PNP l5 transistor PNP N5 npn transistor CS2500 CS3200 lf-621 LF853 CS4000 transistor PNP L5 PDF

    transistor s250

    Abstract: photo diode motion sensor Photo Gap Detector
    Text: SILICON SENSOR S INC 75 DE 1 0253^52 8253922 SILICON ¿ENSQRS INC TTJ□ □ 11 si SILICON SENSORS, INC. Highway 18 East Dodgeville, Wisconsin 53533 Telephone: 608 935-2707 0000374 7ëc 00374 5 D optical switch SSOS-800 SSOS-700 SSQS-700 SS0S-800 TECHNICAL BULLETIN


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    SSOS-700 SSOS-800 SSQS-700 SS0S-800 SSQS-700 transistor s250 photo diode motion sensor Photo Gap Detector PDF

    nec ps2505

    Abstract: NEC photocoupler
    Text: DATA SHEET NEC PHOTOCOUPLER PS2505-1 ,-2,-4, PS2505L-1 ,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES -NEPOC Series DESCRIPTION The PS2505-1, -2, -4 and PS2505L-1, -2, -4 are optically coupled isolators containing GaAs light emitting diodes


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    PS2505-1 PS2505L-1 PS2505-1, PS2505L-1, S2505L-1, PS2505L-1-E3, PS2505L-2-E3, nec ps2505 NEC photocoupler PDF

    SGS250DA013D

    Abstract: SGS250DA sgs250D
    Text: 3DE D Mi T^Sa? QQ30 b ci5 3 • £ ÿ j SCS-THOMSON 0œ iIUI^IïMD ^ ''T * 3 '5 » 3 5 " SGS250D A013D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS ■ LOW Rih JUNCTION TO CASE ■ FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING


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    SGS250D A013D O-240) PC-029« SGS250DA013D SGS250DA PDF

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 Preliminary Data Sheet 36-75 Vdc Input, 25 A, 5.0 Vdc Output TM The QmaX Series of high current single output DC/DC converters from di/dt sets new standards for thermal performance and power density in the quarter brick package. TM The QM48T/S25050 converters of the QmaX Series provide thermal performance in high temperature environments


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    QM48T/S25050 QM48T/S25050 866-WOW-didt QM48x25050 PDF

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 DC-DC Converter Data Sheet 36-75 VDC Input; 5 VDC @ 25 A Quarter-Brick The QM Series of high current single output dc-dc converters sets new standards for thermal performance and power density in the quarter-brick package. The QM48T/S25050 converters of the QM Series provide


    Original
    QM48T/S25050 PDF

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 Preliminary Data Sheet 36-75 Vdc Input, 25 A, 5.0 Vdc Output TM The QmaX Series of high current single output DC/DC converters from di/dt sets new standards for thermal performance and power density in the quarter brick package. TM The QM48T/S25050 converters of the QmaX Series provide thermal performance in high temperature environments


    Original
    QM48T/S25050 QM48T/S25050 866-WOW-didt QM48x25050 PDF

    TR-332

    Abstract: No abstract text available
    Text: QM48T/S25050 DC-DC Converter Data Sheet 36-75 VDC Input; 5 VDC @ 25 A Quarter-Brick The QM Series of high current single output dc-dc converters sets new standards for thermal performance and power density in the quarter-brick package. The QM48T/S25050 converters of the QM Series provide


    Original
    QM48T/S25050 TR-332 PDF

    Untitled

    Abstract: No abstract text available
    Text: QM48T/S25050 DC-DC Converter Data Sheet 36-75 VDC Input; 5 VDC @ 25 A Quarter-Brick The QM Series of high current single output dc-dc converters sets new standards for thermal performance and power density in the quarter-brick package. The QM48T/S25050 converters of the QM Series provide


    Original
    QM48T/S25050 PDF