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    TRANSISTOR S PARAMETERS NOISE Search Results

    TRANSISTOR S PARAMETERS NOISE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR S PARAMETERS NOISE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GE Transistor Manual

    Abstract: cutler 35860 5988-0424EN transistor circuit transistor circuit design TRANSISTOR hFE-100
    Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing bandwidth and noise figure, while


    Original     		PDF 5988-0424EN GE Transistor Manual cutler 35860 transistor circuit transistor circuit design TRANSISTOR hFE-100

    GE Transistor Manual

    Abstract: transistor k 316 35820 transistor circuit design
    Text: Microwave Transistor Bias Considerations Application Note 944-1 Introduction Often the least considered factor in microwave transistor circuit design is the bias network. Considerable effort is spent in measuring s-parameters, calculating gain, and optimizing


    Original     		PDF 5988-0424EN GE Transistor Manual transistor k 316 35820 transistor circuit design

    npn UHF transistor 2N5179

    Abstract: No abstract text available
    Text: 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB max @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 • 1 Characterized with S-Parameters


    Original     		PDF 2N5179 npn UHF transistor 2N5179

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136

    Dielectric Resonator Oscillator DRO

    Abstract: yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Note that since the transistor s parameters change with frequency, k also varies with frequency.


    Original     		PDF 5968-3628E Dielectric Resonator Oscillator DRO yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836

    electrical symbols

    Abstract: ScansU9X22
    Text: TRANSISTOR SYMBOLS T U N G - S O L -TRANSISTOR ELECTR ICA L SYMBOLS SMALL SIGNAL AND HIGH FREQUENCY PARAMETERS AT SPECIFIED BIAS hQb Common base - output admittance, input AC o p e n -c ircu ite d hjb Common base - input impedance, output AC s h o r t - c ir c u it e d


    OCR Scan     		PDF

    BF970

    Abstract: No abstract text available
    Text: Temic BF970 S e m i c o n d u c t o r s Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters


    OCR Scan     		PDF BF970 BF970 27-Feb-97

    TRANSISTOR noise figure measurements

    Abstract: transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32
    Text: IEEE 1990 Bipolar Circuits and Technology Meeting 10.1 THE INFLUENCE OF NON-IDEAL BASE CURRENT ON l / F NOISE BEHAVIOUR OF BIPOLAR TRANSISTORS M.C.A.M. Koolen and J.C.J. Aerts Philips Research Laboratories P.O. Box 80.000 5600 JA Eindhoven - The Netherlands


    OCR Scan     		PDF ED-32, TRANSISTOR noise figure measurements transistor s parameters noise Mextram 138B noise diode Z Transistor diode ED32

    BT 1840 PA

    Abstract: No abstract text available
    Text: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure


    OCR Scan     		PDF bb53T31 BFG67; BFG67/X; BFG67R; BFG67/XR BFG67 BFG67/X BFG67 OT143 BFG67) BT 1840 PA

    Transistor S 40443

    Abstract: No abstract text available
    Text: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF bbS3T31 0024T37 BFG197; BFG197/X; BFG197/XR BFG197 BFG197 OT143 BFG197/X Transistor S 40443

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 00ESS33 7flb APX N AflER PHI LIPS/DISCRETE NPN 9 GHz wideband transistor FEATURES Product specification b?E ]> BFR520 e PINNING • High power gain • Low noise figure PIN DESCRIPTION Code: N28 • High transition frequency


    OCR Scan     		PDF bbS3T31 00ESS33 BFR520 BFR520

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors fc>b53T31 002478*1 347 « A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor FEATURES • Product specification L.7E D £ BFG25A/X PINNING Low current consumption 100 g A - 1 mA PIN DESCRIPTION Code: V11 • Low noise figure


    OCR Scan     		PDF b53T31 BFG25A/X BFG25A/X OT143.

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF bb53c 002S3bb BFT25A BFT25A

    transistor BF 697

    Abstract: transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn
    Text: Philips Sem iconductors • 7 1 1 D f l2 t j 00bT3D5 VbT ■ P H IN Product specification NPN 9 GHz wideband transistor BFS540 PINNING FEA T U R ES PIN CONFIGURATION PIN • High power gain D ESCRIPTIO N Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		PDF 711Dfl2tj 00bT3D5 BFS540 OT323 MBC870 OT323. emitt-172 transistor BF 697 transistor equivalent 0107 NA PJ 1269 bc1323 pj 0266 BFR540 BFS540 025-1 transistor c 4236 2999 npn

    transistor bf 458

    Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE685 IS21EI2 UPA806T 4e-12 18e-12 2e-12 UPA806T transistor bf 458 Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3

    PHILIPS 557 SOT143

    Abstract: MCD144 e 3055 t transistor bf 405 BFG25A/X
    Text: Philips S em iconductors bb53T31 0 D 2 4 7 in 347 ^ lA P X N APIER P H I L IPS/DISCRETE Product specification fc,7E NPN 5 GHz wideband transistor FEATURES • g BFG25A/X PINNING Low current consumption 100 n A - 1 mA • Low noise figure • Gold metallization ensures


    OCR Scan     		PDF bbSBT31 BFG25A/X BFG25A/X OT143 MSB014 PHILIPS 557 SOT143 MCD144 e 3055 t transistor bf 405

    philips HFE 4541

    Abstract: BFT25A transistor BF 502 BFS25A B 0934 transistor BF 52 Transistor BF 479 t
    Text: Philips Sem iconductors bbS 3 T 31 N AMER 0 0 2 5 2 7 7 T O fl ^M APX P H IL IP S /D IS C R E T E Product specification b7 E NPN 5 GHz wideband transistor FEATURES BFS25A PIN CONFIGURATION PINNING • Low current consumption PIN • Low noise figure DESCRIPTION


    OCR Scan     		PDF D02S277 BFS25A OT323 kBCB70 OT323. philips HFE 4541 BFT25A transistor BF 502 BFS25A B 0934 transistor BF 52 Transistor BF 479 t

    iw 1688

    Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
    Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		PDF GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331

    transistor c 6073

    Abstract: DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015
    Text: Philips Semiconductors M N LbS3T31 AMER 0025033 TIM PH ILIPS /D ISCR ETE HIAPX Product specification b7E T> NPN 9 GHz wideband transistor FEATURES BFG541 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency 2 base • Gold metallization ensures


    OCR Scan     		PDF LbS3T31 E5D33 BFG541 OT223 OT2230 transistor c 6073 DD25DS BFG541 BF 331 TRANSISTORS transistor LC 945 lc 945 p transistor NPN TO 92 transistor abe 438 lc 945 transistor lc 945 p transistor NPN NR 4770 015

    557 sot143

    Abstract: PHILIPS 557 SOT143 BFG505 BFRS05 LG 631 TV LG t51 0194 asm 1442
    Text: Philips Semiconductors AMER bbS3T31 ODSHTb? P H IL IP S /D IS C R E T E NPN 9 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. SMfl ^ Product specification


    OCR Scan     		PDF BFG505; BFG505/X; BFG505/XR BFG505 OT143 BFG505 BFG5064 557 sot143 PHILIPS 557 SOT143 BFRS05 LG 631 TV LG t51 0194 asm 1442

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability


    OCR Scan     		PDF bb53T31 BFQ67W OT323 UBC870 OT323. OT323

    NPN transistor SST 117

    Abstract: transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 BFR540 URA698 transistor bf 760
    Text: P h iJ ip ^ e m lc o n d u c t o r ^ ^ ^ ^ ^ ^ b b 5 3 T 3 lD □ 3 n b^ SM7 M AP X Product specification NPN 9 GHz wideband transistor _ FEATURES ^ i N AUER BFR540 P H IL IP S /D IS C R E T E bTE PINNING • High power gain • Low noise figure PIN DESCRIPTION


    OCR Scan     		PDF BFR540 BFR540 NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 URA698 transistor bf 760

    transistor BF 52

    Abstract: No abstract text available
    Text: Philips Semiconductors bb N AUER 53 T 31 0025277 T O fl ^BAPX P H ILIP S /D IS C R E TE b Product specification 7E NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N6


    OCR Scan     		PDF BFS25A OT323 OT323 MBC870 OT323. transistor BF 52

    TAG 9109

    Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331
    Text: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure


    OCR Scan     		PDF bb53T31 BFG67 OT143 BFG67) BFG67/X) BFG67R BFG67/XR) BFG67 Co600 TAG 9109 tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331