2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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MRF325
Abstract: BH rn transistor
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON
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MRF325
MRF325
BH rn transistor
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IR2E27A
Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
Text: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r
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24DIP/24SOP
IR2C10
IR2E34
IR2E27A
Sharp IR2E02
IR2E01
IR2E25
Sharp IR2E27A
IR2E02
IR2E27A SHARP
LED ir2e01
ir2e09
IR2E28
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MJE12007
Abstract: 221A-04 MJE-12007
Text: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô | T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white
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MJE12007
MJE12007
221A-04
MJE-12007
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BD132
Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.
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BD132
711002b
GDM2770
OT-32
BD131.
O-126
OT-32)
BD131
NPN POWER TRANSISTOR SOT-32
M 5229 IC
GQM2771
IEC134
transistor af 126
d5224
transistor Bd132
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Untitled
Abstract: No abstract text available
Text: N AMER P H IL IP S /D IS C R E T E bRE D • b b 5 3 R 31 Philips Sem iconductors D 0 3 0 7 1 D 035 H A P X Product Specification BUK457-600B Pow erM OS transistor G E N E R A L D E SC R IP TIO N N-channel enhancement mode field-effect power transistor in a
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BUK457-600B
bbS3T31
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2N5672
Abstract: 5671 2N5671 2n transistor high
Text: 2N 5671 2N 5672 NPN S ILIC O N T R A N S IS T O R S ,E P IT A X IA L COLLECTOR T R A N S IS T O R S S I L I C I U M , N P N C O L L E C T E U R E P I T A X IE - High speed, high current, high power transistor Transistor de puissance rapide fo rt courant i 90 V
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CB-19
2N5672
5671
2N5671
2n transistor high
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402P
Abstract: No abstract text available
Text: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma
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100MHZ
402P
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TF230
Abstract: NP50P04KDG NP50P04KDG-E1-AY NP50P04KDG-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY Note
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NP50P04KDG
NP50P04KDG
NP50P04KDG-E1-AY
NP50P04KDG-E2-AY
O-263
MP-25ZK)
O-263)
TF230
NP50P04KDG-E1-AY
NP50P04KDG-E2-AY
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NP50P06KDG
Abstract: NP50P06KDG-E1-AY NP50P06KDG-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P06KDG-E1-AY Note
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NP50P06KDG
NP50P06KDG
NP50P06KDG-E1-AY
NP50P06KDG-E2-AY
O-263
MP-25ZK)
O-263)
NP50P06KDG-E1-AY
NP50P06KDG-E2-AY
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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Untitled
Abstract: No abstract text available
Text: r s T SGS-THOMSON m 7M ^OœiLI^TriOiOOi BULK128D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PR EFER RED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAM ETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
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BULK128D
C6949D
SC-0351
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transistor KSA
Abstract: AF109R
Text: ESC D • flEBShOS 0ÛÛ4G53 0 « S I E G A F 109 R PNP Germanium RF Transistor SIEMENS AKT IE Nû ES EL LSC H AF 04053 D - T - 3 /'0 ~ 7 for A G C input stages up to 260 MHz AF 109 R is a germanium PNP RF mesa transistor in TO 72 case 18 A 4 DIN 41876 .
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Q60106-X109-R1
Q004QS?
AF109R
transistor KSA
AF109R
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2sd313 equivalent
Abstract: 2SD313
Text: DC COMPONENTS CO., LTD. 2SD313 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general-purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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2SD313
O-220AB
2sd313 equivalent
2SD313
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MJE2955T
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. R MJE2955T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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MJE2955T
O-220AB
-400mA
-500mA,
MJE2955T
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MJE3055T
Abstract: 890 f 562 ic transistor MJE3055T
Text: DC COMPONENTS CO., LTD. R MJE3055T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28
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MJE3055T
O-220AB
400mA
500mA,
MJE3055T
890 f 562 ic
transistor MJE3055T
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TIP125
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. TIP125 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base
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TIP125
O-220AB
-100mA
-12mA
-20mA
-500mA,
TIP125
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LB125E
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. LB125E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for lighting applications and switch mode power supplies. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base 2 = Collector
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LB125E
O-220AB
LB125E
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2sd880 equivalent
Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR
Text: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)
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2SD880
O-220AB
2sd880 equivalent
2SD880, 1.5 power dissipation
2SD880
2sD880 TRANSISTOR
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LB124E
Abstract: Ic 749 lb124
Text: DC COMPONENTS CO., LTD. LB124E DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high voltage, high speed switching circuits, and amplifier applications. TO-220AB Pinning .405 10.28 .380(9.66) 1 = Base
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LB124E
O-220AB
100MHz
LB124E
Ic 749
lb124
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