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    TRANSISTOR PNP VCBO 25V Search Results

    TRANSISTOR PNP VCBO 25V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR PNP VCBO 25V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE395

    Abstract: No abstract text available
    Text: NTE395 Silicon PNP Transistor Wide Band Linear Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V


    Original     		PDF NTE395 110mA 800MHz 860MHz, 200MHz NTE395

    2AK TRANSISTOR

    Abstract: PNP Epitaxial Silicon Transistor sot-23 MMBT3906K marking 2AK MMBT3906K 2ak
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23 2AK TRANSISTOR PNP Epitaxial Silicon Transistor sot-23 marking 2AK MMBT3906K 2ak

    "PNP Transistor"

    Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
    Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


    Original     		PDF NTE226 NTE226 200mA 200mA, "PNP Transistor" germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		PDF MMBT3906K MMBT3906K OT-23

    Untitled

    Abstract: No abstract text available
    Text: FJX733 FJX733 Low Frequency Amplifier • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF FJX733 FJX945 OT-323

    Untitled

    Abstract: No abstract text available
    Text: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF FJX733 FJX945 OT-323

    FJX733

    Abstract: No abstract text available
    Text: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF FJX733 FJX945 OT-323 FJX733

    FJX733

    Abstract: FJX945
    Text: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF FJX733 FJX945 OT-323 FJX733 FJX945

    FJX733

    Abstract: FJX945
    Text: FJX733 FJX733 Low Frequency Amplifier 3 • Collector-Base Voltage VCBO= -60V • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


    Original     		PDF FJX733 FJX945 OT-323 FJX733 FJX945

    transistor s9012

    Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
    Text: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO


    Original     		PDF S9012 -500mA 625mW S9013 -50mA -500mA -50mA transistor s9012 S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013

    Untitled

    Abstract: No abstract text available
    Text: KSA642 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 • Collector-Base Voltage: VCBO= -30V • Low Collector-Emitter Saturation Voltage: VCE sat = -0.15V(TYP) • Complement to KSC184 ABSOLUTE MAXIMUM RATINGS (TA =25°°C) Characteristic


    Original     		PDF KSA642 KSC184

    BC327

    Abstract: BC328 BC327 equivalent transistor BC328 BC327 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR PNP FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE Parameter Value VCBO Collector-Base Voltage


    Original     		PDF BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 BC327 equivalent transistor BC328 BC327 transistor

    hFE is transistor

    Abstract: 2N6076
    Text: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Unit VCBO Collector-Base Voltage Parameter -25 V VCEO Collector-Emitter Voltage


    Original     		PDF 2N6076 2N6076 hFE is transistor

    2N6076

    Abstract: fairchild low power transistor
    Text: 2N6076 PNP Small Signal Transistor Features • BVceo .25V Min • hFE . 100(Min) @ Vce=10V, Ic=10mA • Pb free Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage


    Original     		PDF 2N6076 2N6076 fairchild low power transistor

    KSA1150

    Abstract: KSC2710
    Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter


    Original     		PDF KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% KSA1150 KSC2710

    KSA1378

    Abstract: KSC3488
    Text: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% KSA1378 KSC3488

    KSC2710

    Abstract: No abstract text available
    Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter


    Original     		PDF KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% Breakdow63 O-92S KSC2710

    KSC3488

    Abstract: No abstract text available
    Text: KSA1378 KSA1378 Low Frequency Power Amplifier • Collector Power Dissipation : PC= 300mW • Complement to KSC3488 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSA1378 300mW KSC3488 O-92S PW10ms, cycle50% O-92S KSC3488

    2SB0790

    Abstract: 2SB790 2SD969
    Text: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage


    Original     		PDF 2SB0790 2SB790) 2SD0969 2SD969) 2SB0790 2SB790 2SD969

    KSA1150

    Abstract: KSC2710
    Text: KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter


    Original     		PDF KSA1150 300mW KSC2710 O-92S PW350ms, cycle50% KSA1150 KSC2710

    2SA1512

    Abstract: 2SC1788
    Text: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm ● ● • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage


    Original     		PDF 2SA1512 2SC1788 2SA1512 2SC1788

    2SB0790

    Abstract: 2SB790 2SD969
    Text: Transistor 2SB0790 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0969 (2SD969) Unit: mm 2.5±0.1 (Ta=25˚C) (1.0) (0.85) Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage


    Original     		PDF 2SB0790 2SB790) 2SD0969 2SD969) 2SB0790 2SB790 2SD969

    Untitled

    Abstract: No abstract text available
    Text: 2N4125/4126 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: V ceo =2N41 25: 30V 2N4126: 25V * Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Rating Unit VcBO -3 0


    OCR Scan     		PDF 2N4125/4126 2N4126: 10fiA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KSA733 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage VCBO= -60V • Complement to KSC945 ABSOLUTE MAXIMUM RATINGS TA =251! C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		PDF KSA733 KSC945