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    TRANSISTOR P38 Search Results

    TRANSISTOR P38 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P38 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XC6SLX16-CSG324

    Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
    Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller


    Original     		PDF DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL

    transistor p38

    Abstract: 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F
    Text: ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC transistor p38 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F

    n mosfet depletion pspice model parameters

    Abstract: P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6
    Text: STP38N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID ST P38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP38N06 P38N06 100oC 175oC O-220 n mosfet depletion pspice model parameters P38N06 diode AR s1 65 n mosfet pspice parameters NMOS depletion pspice model mosfet 20n N CHANNEL DEPLETION MOSFET TRANSISTOR SDM M6 STP38N06 SDM M6

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    SMD10P06L

    Abstract: No abstract text available
    Text: SMD10P06L P-Channel Enhancement-Mode Transistor, Logic Level Product Summary rDS on (W) IDa (A) 0.28 @ VGS = –10 V –10 0.35 @ VGS = –4.5 V –7.5 VDS (V) –60 S TO-252 G Drain Connected to Tab G D S Top View D Order Number: SMD10P06L P-Channel MOSFET


    Original     		PDF SMD10P06L O-252 P-38650--Rev. 06-Jun-94 SMD10P06L

    SMD10P06L

    Abstract: No abstract text available
    Text: SMD10P06L P-Channel Enhancement-Mode Transistor Product Summary rDS on (W) IDa (A) 0.28 @ VGS = –10 V –10 0.35 @ VGS = –4.5 V –7.5 VDS (V) –60 S DPAK (TO-252) D G G S D Top View P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF SMD10P06L O-252) P-38650--Rev. 06-Jun-94 SMD10P06L

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    VQ3001J

    Abstract: VQ3001P
    Text: VQ3001J/3001P N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel –30 2 @ VGS = –12 V –2 to –4.5 –0.6 Features Benefits Applications


    Original     		PDF VQ3001J/3001P P-38283--Rev. 15-Aug-94 VQ3001J VQ3001P

    9907

    Abstract: 9907 a VQ3001J VQ3001P
    Text: VQ3001J/3001P Siliconix NĆ/PĆChannel EnhancementĆMode MOS Transistor Arrays Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) NĆChannel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 PĆChannel -30 2 @ VGS = -12 V -2 to -4.5 -0.6 Features Benefits


    Original     		PDF VQ3001J/3001P P-38283--Rev. 9907 9907 a VQ3001J VQ3001P

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T N-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original     		PDF TN2010T O-236 OT-23) P-38212--Rev. 15-Aug-94 TN2010T

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200

    Untitled

    Abstract: No abstract text available
    Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.


    Original     		PDF PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300

    TN2010T

    Abstract: No abstract text available
    Text: TN2010T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.085 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.


    Original     		PDF TN2010T P-38212--Rev. TN2010T

    5262

    Abstract: VP2410L
    Text: VP2410L Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP2410L -240 10 @ VGS = -4.5 V -0.8 to -2.5 -0.18 Features Benefits Applications D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,


    Original     		PDF VP2410L O226AA O226AA) P-38283--Rev. 5262 VP2410L

    marking codes n1 transistors sot-23

    Abstract: transistor marking N1 TN0201T N1 marking code
    Text: TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) 20 rDS(on) Max (W) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1 0 to 33.0 1.0 03 0.3 Features Benefits Applications D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS


    Original     		PDF TN0201T O-236 OT-23) P-38212--Rev. 15-Aug-94 marking codes n1 transistors sot-23 transistor marking N1 TN0201T N1 marking code

    B0815

    Abstract: vp2410
    Text: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits


    OCR Scan     		PDF VP2410L O-226AA P-38283--Rev. O-226AA) B0815 vp2410

    Untitled

    Abstract: No abstract text available
    Text: Tem ic Siliconix_ _ N-Channel Enhancement-Mode MOS Transistor Product Summary V bk d ss M in (V) r DS(on) M ax (Q ) Vg s (Ui) (V) Id (A) 200 11 0.8 to 3.0 0.085 Features • • • • • Low On-Resistance: 9.5 Q


    OCR Scan     		PDF O-236 OT-23) TN2010T P-38212--Rev.

    tn0201t

    Abstract: 38212 3-8212
    Text: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications


    OCR Scan     		PDF TN0201T TN020esistance P-38212--Rev. TN0201T_ tn0201t 38212 3-8212

    Untitled

    Abstract: No abstract text available
    Text: T e m ic VP2410L Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number VP2410L V BR DSS Mi» (V) -240 Features • • • • • High-Side Switching Secondary Breakdow n Free: —255 V Low On-Resistance: 8 CÏ Low-Power/Voltage Driven


    OCR Scan     		PDF VP2410L O-226AA P-38283--Rev. O-226AA)

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		PDF 2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922

    Untitled

    Abstract: No abstract text available
    Text: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features


    OCR Scan     		PDF VQ3001J/3001P P-38283--