TRANSISTOR P14 Search Results

TRANSISTOR P14 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR P14 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Mitsubishi M54564 Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide	Original	A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p	PDF
P14N60E/D Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	P14N60E/D MGP14N60E P14N60E/D	PDF
2SC5606 Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold	Original	2SC5606 2SC5606-T1 2SC5606 transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504	PDF
2SC5606 Abstract: 2SC5606-T1 ic ta 7698 Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold	Original	2SC5606 2SC5606-T1 2SC5606 2SC5606-T1 ic ta 7698	PDF
XC6SLX16-CSG324 Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695 Text: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller	Original	DS695 CH-7301 XC6SLX16-CSG324 ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL	PDF
2SC5600 Abstract: transistor 2SC5600 P14999EJ1V0DS00 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold t = 0.59 mm	Original	2SC5600 2SC5600-T1 2SC5600 transistor 2SC5600 P14999EJ1V0DS00	PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
2SC5006 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to	Original	PA821TC 2SC5006) PA821TC IS21el2 PA821TC-T1 2SC5006	PDF
P14548EJ1V0DS00 Abstract: 2SC5006 3570 1231 NEC k 787 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band	Original	PA801TC 2SC5006) PA801TC PA801TC-T1 P14548EJ1V0DS00 2SC5006 3570 1231 NEC k 787	PDF
2SC5600 Abstract: Transistor NEC K 3654 2SC5603 NPN C 9013 marking 2c Text: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5603, 2SC5600)	Original	PA843TC 2SC5603, 2SC5600) S21e2 2SC5603 2SC5600 2SC5600 Transistor NEC K 3654 2SC5603 NPN C 9013 marking 2c	PDF
marking 89 Abstract: 2SC5007 2SC5010 3771 nec Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to	Original	PA840TC PA840TC 2SC5010, 2SC5007) S21e2 2SC5010 marking 89 2SC5007 2SC5010 3771 nec	PDF
NE66219 Abstract: NEC66219 2SC5606 Text: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package	Original	NE66219 2SC5606 NEC66219 2SC5606 NE66219-T1 2SC5606-T1 NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A	PDF

2SC5010 Abstract: 2SC5006 7805 nec NEC JAPAN 7805 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to	Original	PA835TC PA835TC 2SC5010, 2SC5006) S21e2 2SC5010 2SC5010 2SC5006 7805 nec NEC JAPAN 7805	PDF
OF IC 7909 Abstract: P14553EJ1V0DS00 2SC5010 MARKING 702 6pin ic Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise and high gain • Operable at low voltage • Small feedback capacitance: Cre = 0.4 pF TYP.	Original	PA826TC 2SC5010) PA826TC-T1 OF IC 7909 P14553EJ1V0DS00 2SC5010 MARKING 702 6pin ic	PDF
2SC5006 Abstract: 2SC5010 IC 7805 14 pin Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to	Original	PA835TC PA835TC 2SC5010, 2SC5006) 2SC5006 2SC5010 IC 7805 14 pin	PDF
IC A 4661 0634 Abstract: IC A 3101 0632 8 pin 2SC5006 2SC5007 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to	Original	PA831TC PA831TC 2SC5006, 2SC5007) 2SC5006 2SC5007 IC A 4661 0634 IC A 3101 0632 8 pin 2SC5006 2SC5007	PDF
2SC5435 Abstract: marking 83 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA826TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to	Original	PA826TC PA826TC S21e2 2SC5435) 2SC5435 2SC5435 marking 83	PDF
2SC5007 Abstract: 2SC5010 nec 5201 3771 nec Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to	Original	PA840TC PA840TC 2SC5010, 2SC5007) 2SC5007 2SC5010 nec 5201 3771 nec	PDF
2SC5435 Abstract: No abstract text available Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA826TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to	Original	PA826TC PA826TC S21e2 2SC5435) 2SC5435 2SC5435	PDF
2SC5606 Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package	Original	2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A M8E0904E 2SC5606 2SC5606-T1 ultra low noise NPN transistor nec microwave	PDF
2SC5006 Abstract: A 2630 0717 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA810TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band	Original	PA810TC 2SC5006) PA810TC PA810TC-T1 2SC5006 A 2630 0717	PDF
2SC5195 Abstract: k 1507 Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA814TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz	Original	PA814TC 2SC5195) PA814TC-T1 2SC5195 k 1507	PDF

TRANSISTOR P14 Search Results

TRANSISTOR P14 Result Highlights (5)

TRANSISTOR P14 Datasheets Context Search

Mitsubishi M54564

P14N60E/D

2SC5606

2SC5606

XC6SLX16-CSG324

2SC5600

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

2SC5006

P14548EJ1V0DS00

2SC5600

marking 89

NE66219

2SC5010

OF IC 7909

2SC5006

IC A 4661 0634

2SC5435

2SC5007

2SC5435

2SC5606

2SC5006

2SC5195