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    NE66219

    Abstract: NEC66219 2SC5606
    Text: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


    Original     		NE66219 2SC5606 NEC66219 2SC5606 NE66219-T1 2SC5606-T1 NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A PDF