Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR P122 Search Results

    TRANSISTOR P122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR P122 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes


    Original     		PDF DCP69/-16/-25 DCP68) OT-223 J-STD-020D DS30798

    DCX69

    Abstract: DCX68
    Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCX68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DCX69/-16/-25 DCX68) OT89-3L J-STD-020D MIL-STD-202, DS31264 DCX69 DCX68

    Untitled

    Abstract: No abstract text available
    Text: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DCP69/-16/-25 DCP68) OT-223 J-STD-020D DS30798

    DCX68

    Abstract: DCX69 MARKING P12 DCX69-16 J-STD-020D DS31264 marking code p12 sot89 p1225
    Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCX68 Ideally Suited for Automated Assembly Processes


    Original     		PDF DCX69/-16/-25 DCX68) OT89-3L J-STD-020D MIL-STD-202, DS31264 DCX68 DCX69 MARKING P12 DCX69-16 J-STD-020D marking code p12 sot89 p1225

    p1225

    Abstract: MARKING P12 DCP68 DCP69 DCP69-16 J-STD-020D
    Text: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes


    Original     		PDF DCP69/-16/-25 DCP68) OT-223 J-STD-020D DS30798 p1225 MARKING P12 DCP68 DCP69 DCP69-16 J-STD-020D

    p1225

    Abstract: No abstract text available
    Text: DCP69/-16/-25 20V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


    Original     		PDF DCP69/-16/-25 DCP68) AEC-Q101 OT223 J-STD-020 OT223 DS30798 p1225

    DCX69

    Abstract: No abstract text available
    Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Note 1


    Original     		PDF DCX69/-16/-25 AEC-Q101 J-STD-020 MIL-STD-202, DS31264 DCX69

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442

    NEC D288

    Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
    Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32984D NE32984D NEC D288 d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    transistor marking v72

    Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    Original     		PDF NE429M01 NE429M01 NE429M01-T1 transistor marking v72 transistor k 2628 NEC Ga FET marking C C10535E NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A

    transistor P122

    Abstract: P122
    Text: polyfet rf devices P122 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices P122 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF

    panasonic inverter 707 manual

    Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
    Text: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change


    Original     		PDF 78K0/IB2 78K0/IB2 ZBB-CE-09-0011-E TC74VHC125F TC74VHC14F 3386F-1-104TLF CMR309T-16 000MABJ-UT panasonic inverter 707 manual traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor

    pd4050

    Abstract: NEC motor PS2805-4-F3 PS2805 PS2805-1 PS2805-1-F3 PS2805-1-F4 PS2805-4 PS2805-4-F4 VDE0884
    Text: DATA SHEET PHOTOCOUPLER PS2805-1,PS2805-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SOP for high density applications.


    Original     		PDF PS2805-1 PS2805-4 PS2805-4 16-pin E72422 VDE0884 pd4050 NEC motor PS2805-4-F3 PS2805 PS2805-1-F3 PS2805-1-F4 PS2805-4-F4

    dali master schematic

    Abstract: DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual
    Text: Application Note Controlling Fluorescent Lamp Ballasts by Using 78K0/Ix2 This application note describes how to control fluorescent lamp ballasts by using the various features of the 78K0/Ix2 microcontroller. Details about power factor correction PFC controlled by using a PWM timer that operates in


    Original     		PDF 78K0/Ix2 78K0/IY2 78K0/IA2 78K0/IB2 U19665EJ2V0AN00 G0706 dali master schematic DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual

    d667 transistor

    Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
    Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.


    Original     		PDF CPD0304020C1 CF-73 CF-731 SuC1707 C1709 C1712 C1713 C1711 R1701 R1700 d667 transistor nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot

    NEC Ga FET marking L

    Abstract: U/25/20/TN26/15/850/NE32984D
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		PDF NE32984D NE32984D NE32984D-SL NE32984Dr NEC Ga FET marking L U/25/20/TN26/15/850/NE32984D

    NEC k 2134 transistor

    Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm


    OCR Scan     		PDF NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584

    Transistor NEC K 3654

    Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS


    OCR Scan     		PDF NE32984D NE32984D NE32984D-T1A NE32984D-SL NE32984D-T1 Transistor NEC K 3654 NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V

    NEC Ga FET marking L

    Abstract: No abstract text available
    Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		PDF NE429M01 NE429M01 200pm NEC Ga FET marking L

    Untitled

    Abstract: No abstract text available
    Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.


    OCR Scan     		PDF NE429M01 NE429M01 NE429M01-T1 Fin/50

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


    OCR Scan     		PDF NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

    date code marking NEC TRANSISTOR

    Abstract: No abstract text available
    Text: DATA SHEET NEC PHOTOCOUPLER PS2801 -1 ,PS2801 -4 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER -NEPOC S eries- DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications.


    OCR Scan     		PDF PS2801 PS2801-1 PS2801-4 16-pin E72422 VDE0884 date code marking NEC TRANSISTOR