Untitled
Abstract: No abstract text available
Text: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes
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DCP69/-16/-25
DCP68)
OT-223
J-STD-020D
DS30798
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DCX69
Abstract: DCX68
Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCX68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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DCX69/-16/-25
DCX68)
OT89-3L
J-STD-020D
MIL-STD-202,
DS31264
DCX69
DCX68
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Untitled
Abstract: No abstract text available
Text: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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DCP69/-16/-25
DCP68)
OT-223
J-STD-020D
DS30798
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DCX68
Abstract: DCX69 MARKING P12 DCX69-16 J-STD-020D DS31264 marking code p12 sot89 p1225
Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCX68 Ideally Suited for Automated Assembly Processes
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DCX69/-16/-25
DCX68)
OT89-3L
J-STD-020D
MIL-STD-202,
DS31264
DCX68
DCX69
MARKING P12
DCX69-16
J-STD-020D
marking code p12 sot89
p1225
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p1225
Abstract: MARKING P12 DCP68 DCP69 DCP69-16 J-STD-020D
Text: DCP69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes
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DCP69/-16/-25
DCP68)
OT-223
J-STD-020D
DS30798
p1225
MARKING P12
DCP68
DCP69
DCP69-16
J-STD-020D
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p1225
Abstract: No abstract text available
Text: DCP69/-16/-25 20V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DCP68 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications
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DCP69/-16/-25
DCP68)
AEC-Q101
OT223
J-STD-020
OT223
DS30798
p1225
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DCX69
Abstract: No abstract text available
Text: DCX69/-16/-25 PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS compliant Note 1
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DCX69/-16/-25
AEC-Q101
J-STD-020
MIL-STD-202,
DS31264
DCX69
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d768 transistor
Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent
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NE32584C
NE32584C
d768 transistor
3-pin D128 transistor
transistor D128
transistor D586
D1515
ne32584c application note
transistor d436
d388 transistor
D832 transistor
transistor D442
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NEC D288
Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE32984D
NE32984D
NEC D288
d1397
D331 transistor
transistor d288
nec d1594
D78 NEC
D1594
transistor nec D78
transistor d168
D1116
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transistor p98
Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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CGH40025F
APPNOTE-006
transistor p98
P99 transistor
transistor nc p79
p88 transistor
Gan hemt transistor
100 p38 transistor
transistor be p88
p115
WR35
1/SMD bm p57
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transistor marking v72
Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
transistor marking v72
transistor k 2628
NEC Ga FET marking C
C10535E
NE429M01-T1
VP15-00-3
hjfet
NEC Ga FET marking A
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transistor P122
Abstract: P122
Text: polyfet rf devices P122 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices P122 PATENTED GOLD METALLIZED General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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panasonic inverter 707 manual
Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
Text: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change
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78K0/IB2
78K0/IB2
ZBB-CE-09-0011-E
TC74VHC125F
TC74VHC14F
3386F-1-104TLF
CMR309T-16
000MABJ-UT
panasonic inverter 707 manual
traffic light using 68K
2PC 502
DSP02-002-431G
C516* npn transistor
GRM21BR11H104KA01L
501C LED Driver
EZ-0008
p120 photocoupler
C517 transistor
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pd4050
Abstract: NEC motor PS2805-4-F3 PS2805 PS2805-1 PS2805-1-F3 PS2805-1-F4 PS2805-4 PS2805-4-F4 VDE0884
Text: DATA SHEET PHOTOCOUPLER PS2805-1,PS2805-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting diodes and an NPN silicon phototransistor in a plastic SOP for high density applications.
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PS2805-1
PS2805-4
PS2805-4
16-pin
E72422
VDE0884
pd4050
NEC motor
PS2805-4-F3
PS2805
PS2805-1-F3
PS2805-1-F4
PS2805-4-F4
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dali master schematic
Abstract: DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual
Text: Application Note Controlling Fluorescent Lamp Ballasts by Using 78K0/Ix2 This application note describes how to control fluorescent lamp ballasts by using the various features of the 78K0/Ix2 microcontroller. Details about power factor correction PFC controlled by using a PWM timer that operates in
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78K0/Ix2
78K0/IY2
78K0/IA2
78K0/IB2
U19665EJ2V0AN00
G0706
dali master schematic
DSP02-002-431G
GRM21BR11H104KA01L
dali schematic
TRANSISTOR 707
diode 702
1ss133 diode
mip022
ic501
panasonic inverter 707 manual
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d667 transistor
Abstract: nec tokin oe 128 NEC Tokin oe 907 inverter nec tokin diode tp806 K105 mosfet tokin lcd inverter transistor k58 LM2729 D635 sot
Text: ORDER NO. CPD0304020C1 Notebook Computer CF-73 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model Number Reference The following models are numbered in accordance with the types of CPU, LCD and HDD etc. featured by product.
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CPD0304020C1
CF-73
CF-731
SuC1707
C1709
C1712
C1713
C1711
R1701
R1700
d667 transistor
nec tokin oe 128
NEC Tokin oe 907
inverter nec tokin
diode tp806
K105 mosfet
tokin lcd inverter
transistor k58
LM2729
D635 sot
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NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
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NEC k 2134 transistor
Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm
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NE32584C
NE32584C
NE32584C-T1A
NE32584C-SL
NE32584C-T1
NEC k 2134 transistor
k 2134 nec
nec gaas fet marking
NEC D 809 k
NEC 2134 transistor
NE32584
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Transistor NEC K 3654
Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE32984D
NE32984D
NE32984D-T1A
NE32984D-SL
NE32984D-T1
Transistor NEC K 3654
NEC Ga FET marking L
NEC 2505
NEC k 3654
NEC Ga FET marking A
KA transistor 26 to 40 GHZ
NEC 1093
nec gaas fet marking
low noise, hetero junction fet
NEC Ga FET marking V
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NEC Ga FET marking L
Abstract: No abstract text available
Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
200pm
NEC Ga FET marking L
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Untitled
Abstract: No abstract text available
Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
Fin/50
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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date code marking NEC TRANSISTOR
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2801 -1 ,PS2801 -4 HIGH ISOLATION VOLTAGE SOP PHOTOCOUPLER -NEPOC S eries- DESCRIPTION The PS2801-1 and PS2801-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications.
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PS2801
PS2801-1
PS2801-4
16-pin
E72422
VDE0884
date code marking NEC TRANSISTOR
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