TRANSISTOR P 112 Search Results

TRANSISTOR P 112 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR P 112 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR SMD MARKING CODE QR Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11 Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium	Original	PDF	PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
MOSFET TRANSISTOR SMD MARKING CODE 11 Abstract: P-CHANNEL MOSFET Text: 020 -6 PMC85XP DF N2 30 V P-channel MOSFET with pre-biased NPN transistor Rev. 1 — 24 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium	Original	PDF	PMC85XP DFN2020-6 OT1118) MOSFET TRANSISTOR SMD MARKING CODE 11 P-CHANNEL MOSFET
MDA425 Abstract: MDA427 BLV93 MDA422 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV93 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz	Original	PDF	BLV93 OT-171) MDA425 MDA427 BLV93 MDA422
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	PDF	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
1427H Abstract: PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 UPA1427 PA1427 Text: DATA SHEET «PAI427 SILICON TRANSISTOR ARRAY PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE D E S C R IP T IO N P A C K A G E D IM E N S IO N The ¿¿PA1427 is PNP silico n e p ita xial D a rlin g to n P ow er T ra n sisto r	OCR Scan	PDF	PAI427 uPA1427 1427H PA1427H NEC PA1427H IEI-1213 DARLINGTON MANUAL MIL GRADE TRANSISTOR ARRAY MEI-1202 MF-1134 PA1427
BFG96 Abstract: BFG32 MSB037 3H2 philips MBB352 Text: Product specification Philips Semiconductors 7 ^ 3 / - Z 3 PNP 5 GHz wideband transistor philips SbE D international BFG32 711Dfi2b D04SD3S ETfl • P H I N PINNING D ESCRIPTION 1 P N P transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in	OCR Scan	PDF	BFG32 OT103 BFG96. D04SD3S MSB037 OT103. BFG96 BFG32 3H2 philips MBB352
BFQ51C Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173 Text: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,	OCR Scan	PDF	BFQ51C BFP90A. bb53T31 T-31-17 BFQ51C marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173
transistor smd zG Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with	OCR Scan	PDF	BFG17A OT143. transistor smd zG npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
CMBT3906 Abstract: No abstract text available Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor Marking CMBT3906 ; 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1,02_ 0.89 2.00 1.80 0.60 0.40 ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	CMBT3906 CMBT3906
D2C17 Abstract: BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf Text: N AMER P H I L I P S / D I S C R E T E bTE T> • ^ 53^31 T 1 3 ■ APX 002*1732 A BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran	OCR Scan	PDF	BLY92C OT-120. 7Z68949 D2C17 BLY92C BLY92 BLY92 transistor sot120 8-32UNC RF POWER TRANSISTOR NPN vhf
C4722 Abstract: No abstract text available Text: \ P P I i l \ l l II'll \ < l l ’ Compensation for Linear Regulators by k io r.in In the m ajority o f low drop and qu asi low d rop com posite N P N -P N P ) regulators, the pass device or the pass device driver, is a lateral PN P transistor. The lateral PN P transistor is inherently a Ion' frequ en cy c u to ff device w ith a poor transient response.	OCR Scan	PDF
nec 2571 Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz Text: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .	OCR Scan	PDF	2SC4957 2SC4957-T1 4957-T2 2SC4957) nec 2571 NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Untitled Abstract: No abstract text available Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 = 2A PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 0.14 0.70 0.50 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter	OCR Scan	PDF	CMBT3906

Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5051 Advance Information The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR . . . sp ecifica lly desig n ed fo r high p o w e r vis io n or sound TV a m p lifie rs o p e ra tin g Class	OCR Scan	PDF	TPV5051 BD135
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D bbS3T31 0D3D5SD 112 H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	PDF	bbS3T31 OT186 BUK443-1OOA/B BUK443 -100A -100B bbS3t131 003052M BUK443-100A/B
TRANSISTOR GB 558 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •	OCR Scan	PDF	2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558
transistor A 564 Abstract: transistor vc 548 3B 843 Transistor 2217S2 Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed	OCR Scan	PDF	OT173 BFQ66 711Dfl2b transistor A 564 transistor vc 548 3B 843 Transistor 2217S2
BT 156 transistor Abstract: TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 RCA-40637A i53b 5659065 rca transistor Text: File No. 655 . □uobz/d RF Pow er Tran sisto rs Solid State Divi8ion 40637A Silicon N-P-N Epitaxial Planar Transistor For Frequency-Multiplier Service in Mobile, Marine, and Sonobuoy V H F Transmitters Features: • High transistor dissipation rating P j = 2 W max.	OCR Scan	PDF	0637A RCA-40637A 0637A 13-MHz 92CS-20223 BT 156 transistor TRANSISTOR BJ 122 RCA-40637 sf 122 transistor Arnold Magnetics transistor sf 127 i53b 5659065 rca transistor
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1.3 dB ty p . @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB ty p	OCR Scan	PDF	2SC5185 2SC5185-T1 2SC5185-T2
BFG96 Abstract: No abstract text available Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in	OCR Scan	PDF	bbS3T31 0031ST2 BFG96 BFG32. OT103. BFG96
SOT173 Abstract: D-045 BFQ66 philips 586 K1HC k 219 transistor Text: Philips Semiconductors Product specification / Ÿ NPN 8 GHz wideband transistor P H IL IP S I N T E R N A T I O N A L DESCRIPTION SbE P • BFQ66 711Dfl2b 0 D 4 5 4T 5 3^b ■ P H I N PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed	OCR Scan	PDF	BFQ66 OT173X. SOT173 D-045 BFQ66 philips 586 K1HC k 219 transistor
CMBT3906 Abstract: No abstract text available Text: CMBT3906 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3906 : 2A P A C K A G E O U TLIN E D ETA ILS ALL D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_ 0.60 0.40 0.89	OCR Scan	PDF	CMBT3906 100nA; CMBT3906
bfq34 application note Abstract: ON4497 BFQ34 sf 122 transistor Text: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a	OCR Scan	PDF	DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor

TRANSISTOR P 112 Search Results

TRANSISTOR P 112 Result Highlights (5)

TRANSISTOR P 112 Datasheets Context Search

TRANSISTOR SMD MARKING CODE QR

MOSFET TRANSISTOR SMD MARKING CODE 11

MDA425

mcl610

MCT8 opto

1427H

BFG96

BFQ51C

transistor smd zG

CMBT3906

D2C17

C4722

nec 2571

Untitled

Untitled

Untitled

TRANSISTOR GB 558

transistor A 564

BT 156 transistor

Untitled

BFG96

SOT173

CMBT3906

bfq34 application note