A011 transistor
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 38-06037 Spec Title: CY7C138 4K X 8/9 DUAL-PORT STATIC RAM WITH SEM , INT, BUSY Sunset Owner: Adithi Perepu Replaced by: NONE CY7C138 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True dual-ported memory cells that enable simultaneous reads
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CY7C138
CY7C138
16-bit
A011 transistor
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CY7C
Abstract: a7l transistor A011 transistor CY7C138 CY7C138-25JXC CY7C138-25JXI
Text: CY7C138 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True dual-ported memory cells that enable simultaneous reads of the same memory location ■ 4K x 8 organization CY7C138 ■ 0.65-micron complementary metal oxide semiconductor
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CY7C138
CY7C138)
65-micron
CY7C
a7l transistor
A011 transistor
CY7C138
CY7C138-25JXC
CY7C138-25JXI
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7133 A-1
Abstract: 7130 AN-91 transistor mark l6 IDT7024 IDT7025 signal path designer
Text: THE MOST COMMONLY ASKED QUESTIONS ABOUT DUAL PORTS APPLICATION NOTE AN-91 Integrated Device Technology, Inc. By Mark Baumann WHAT IS A DUAL PORT? A dual port RAM is exactly what it sounds like. It is a single static RAM array with separate address, data, and control
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AN-91
7133 A-1
7130
AN-91
transistor mark l6
IDT7024
IDT7025
signal path designer
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HX6409
Abstract: D1878
Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106
1x1014
1x109
1x1011
HX6409
D1878
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HX6409
Abstract: No abstract text available
Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106
1x1014
1x109
1x1011
HX6409
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Z80A
Abstract: Z80A CPU z80a-cpu sense amplifier bitline memory device Application Note 02 datasheet and application 7217 idt7134 MICROPROCESSOR 68000 2kx8 interfacing IDT7050
Text: INTRODUCTION TO IDT's FourPort RAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CEMOS™ technology, new RAM architectures and additional features have become feasible. The end result is that
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AN-45
IDT7052
12-transistor
IDT7050
Z80A
Z80A CPU
z80a-cpu
sense amplifier bitline memory device
Application Note 02
datasheet and application 7217
idt7134
MICROPROCESSOR 68000
2kx8 interfacing
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Z80A
Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and
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AN-45
IDT7052
IDT7054
12-transistor
IDT7052/IDTative
Z80A
Z80A CPU
z80a-cpu
4Kx8 Dual-Port Static RAM
sense amplifier bitline memory device
datasheet and application 7217
IDT7027
AN-45
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Z80A
Abstract: Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45
Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed
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AN-45
IDT7052
IDT7054
12-transistor
Z80A
Z80A-CPU
Z80A CPU
16 bit processor schematic
2kx8 EPROM
SRAM 6116
4Kx8 Dual-Port Static RAM
datasheet and application 7217
MICROPROCESSOR 68000
AN-45
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4Kx8 Dual-Port Static RAM
Abstract: Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45
Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed
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AN-45
IDT7052
IDT7054
12-transistor
T7054
4Kx8 Dual-Port Static RAM
Z80A
Z80A CPU
z80a-cpu
128 byte dual port memory
sense amplifier bitline memory device
16 bit processor schematic
datasheet and application 7217
DSP CPU non-recursive filter decoder
AN-45
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transistor A7
Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Text: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being
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ST2149QTR
Abstract: ST2149 QFN16L ST2149Q
Text: ST2149 4-bit dual supply level translator without direction control pin Features • 42 MHz: 84 Mbps max data rate at VL = 1.8 V, VCC = 3.3 V ■ Bidirectional level translation without direction control pin ■ Wide voltage range (VCC ≥ VL): – VL ranges from 1.65 to 3.6 V
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ST2149
QFN16
ST2149
ST2149QTR
QFN16L
ST2149Q
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schematic inductive proximity sensor
Abstract: wheatstone bridge connected to ad624 honeywell inductive detector hall sensor 4-pin cd rom driver honeywell v3 "inductive sensor" marking code GBK isolated voltage sensor 1mhz Magnetic stripe card encoders schematics HONEYWELL* gradiometer schematic inductive speed sensor
Text: GMR Sensors Data Book April 2003 NVE Corporation 11409 Valley View Road, Eden Prairie, Minnesota, 55344 USA 800 467-7141 Web: www.nve.com Email: info@nve.com 04/28/03 Applications for NVE GMR Sensors • • • • • • • • • • • • • •
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Untitled
Abstract: No abstract text available
Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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M10339EJ3V0UM00
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Untitled
Abstract: No abstract text available
Text: 12-Nov-13 Contact : Gonzalo Picún +32-10-489214 Nov. 13 CHT-MAGMA - DATASHEET (Last Modification Date) CHT-MAGMA DATASHEET Version: 1.7 12-Nov-13 (Last Modification Date) High Temperature PWM Controller General Description Features MAGMA is a High Temperature Pulse
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12-Nov-13
50KHz
500KHz.
DS-100702
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H11AV1
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Text: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs
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b3b725S
H11AV1
H11AV2
H11AV3
H11AV3A
H11AV1A
H11AV2A
H11AV3A
diode b3l
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits
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AS7C181026LL
44-pin
48-ball
AS7C181026LL-55TI
AS7C181026LL-70TI
AS7C181026LL-100TI
AS7C181026LL-55BC
AS7C181026LL-70BC
AS7C181026LL-100BC
AS7C181026LL-55BI
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106rad
1x101
1x109
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Untitled
Abstract: No abstract text available
Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106rad
1x101
1x109
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holtek sound chip
Abstract: No abstract text available
Text: HOLTEK r r HT82013 ADPCM Synthesizer with External ROMs Features • • • • • • • • Operating voltage: 3.5V~5.0V Directly interface with external parallel ROMs Size of external parallel ROMs up to 8Mbx3 12-bit analysis and 3 bit ADPCM coding algorithm
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12-bit
1368-second
58MHz
HT82013
HT82003
holtek sound chip
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times
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HX6409
HX6218
HX6136
1x10U
1x109
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transistor KSP 42
Abstract: irf950 IRFP100 transistor KSP 56 transistor KSP 92 G 23 ksp 36 93 IRF9500 transistor KSP 13 Samsung "NAND Flash" "ordering information" IRFP p-channel
Text: ORDERING INFORMATION KSV 3100A C N/ + BURN-IN OPTIONAL (SEE BURN-IN PROGRAM) PACKAGE TYPE (SEE EACH SPEC OF DEVICE) OPERATING TEMP IC’S ONLY BLANK: SEE INDIVIDUAL SPEC C : 0 - 70°C I : - 40 - 85°C M : - 5 5 - + 125°C DEVICE NUMBER AND SUFFIX (OPTIONAL)
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OT-23
O-220
100ns
120ns
150ns
200ns
16bit
transistor KSP 42
irf950
IRFP100
transistor KSP 56
transistor KSP 92 G 23
ksp 36 93
IRF9500
transistor KSP 13
Samsung "NAND Flash" "ordering information"
IRFP p-channel
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106
1x101
1x109
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106rad
1x101
1x109
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PJ 1169
Abstract: No abstract text available
Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.
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M10339EJ3V0UM00
PJ 1169
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