TRANSISTOR NPN EPITAXIAL SILICON ZG Search Results

TRANSISTOR NPN EPITAXIAL SILICON ZG Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

TRANSISTOR NPN EPITAXIAL SILICON ZG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor marking zg Abstract: npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor Text: Central” CMXT2222A Semiconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2222A type is a dual NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal general	OCR Scan	CMXT2222A OT-26 150mA, 15nnA OT-26 06-January transistor marking zg npn Epitaxial Silicon zg 0118 transistor 538 NPN transistor LC marking code transistor	PDF
ABE 422 Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721	PDF
Transistor BFr 99 Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620 Text: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,	OCR Scan	fl235bDS 2N6620. Q62702-F346-S1 Q68000-A4668 fl23Sfc 0004fc BFR34A 200MHz Transistor BFr 99 Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620	PDF
bfr 547 Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 Text: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise	OCR Scan	fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39	PDF
2SC2783 Abstract: VC-80 Series uhf 13W amplifier Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier	PDF
transistor c 5855 Abstract: npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44 Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C	OCR Scan	PTB23006U FO-41B 7110fl2b D0T433b FO-41B. ocma37 transistor c 5855 npn Epitaxial Silicon zg NPN Silicon Planar Epitaxial Transistors PTB23006U T4333 Outline T44	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3279 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3279 Unit in mm STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • .5.1 M AX. High DC Current Gain and Excellent hpg Linearity : h-FE (1)= 140—600 (VCE = 1V, IC = 0,5A)	OCR Scan	2SC3279 Ta-25 961001EAA2'	PDF
2-13B1A Abstract: Transistor S5B 2SC2290 equivalent 2sc2290 Text: TO SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 -3 0 M H Z S5B LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP Power Gain Gp = 11.8dB (Min.)	OCR Scan	2SC2290 28MHz 60WpEP --30dB 961001EAA2' 2-13B1A Transistor S5B 2SC2290 equivalent 2sc2290	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2638 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 6 38 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 6W Min. (f= 175MHz, V <x = 12.5V, Pi = 0.5W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	2SC2638 175MHz,	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 Ç C 7 7 Q fl Unit in mm 2~30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 60WpEP (Min.) Power Gain	OCR Scan	2SC2290 28MHz 60WpEP 961001EAA2'	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 2643 UHF BAND POWER AMPLIFIER APPLICATIONS U n it in mm Output Power : Po = 25W Min. (f= 470MHz, V çc = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V vebo A 1. EMITTER ic	OCR Scan	2SC2643 470MHz,	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 ^ f ? fi J 7 UHF BAND POWER AMPLIFIER APPLICATIONS • U nit in mm O utput Power : Po = 12W Min. (f= 470MHz, V c c = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL	OCR Scan	2SC2642 470MHz,	PDF
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC4840 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4840 VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low N oise F igure, H igh Gain. • N F = l.ld B , \|S2 le l2 = 13dB f= lG H z U n it in mm MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SC4840	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C2 78 3 UHF BAND POWER AMPLIFIER APPLICATIONS • U n it in mm 1 8 .4 ± Q 5 Output Power : Po = 40W Min. (f= 470MHz, VCC = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC	OCR Scan	2SC2783 470MHz, 2-13C1A	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN9C10FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C1OFT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES	OCR Scan	HN9C10FT 2SC5261 2SC5086 2000MHz 1000MHz CB--10V, --10V, 500MHz	PDF
bly 2 10 Abstract: BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor Text: BFY90 NPN EPITAXIAL PLANAR SILICON TRANSISTOR . . _ 769 FOR LOW NOISE U H F/VH F A M P L IFIE R AND O SC ILLA TO R APPLICA TIO N S • • • • Guaranteed Guaranteed Guaranteed Guaranteed Low Noise Figure —5 dB Maximum at 500 MHz Gain Bandwidth Product — 1*5 GHz	OCR Scan	BFY90 O-117 T0-60CE S0-104 SO-104 bly 2 10 BLW11 blx66 BFY90 uhf vhf amplifier bly62 transistor zg BLY53A BLY78 BFy 90 transistor	PDF
2SC5086 Abstract: 2SC5261 HN9C10FT Text: TO SH IBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C1OFT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 2.1 ± 0.1 1 i r 4- A •	OCR Scan	HN9C10FT 2SC5261 2SC5086 2SC5086 HN9C10FT	PDF
Untitled Abstract: No abstract text available Text: TO SH IB A 2SC4839 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4839 VHF—UHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , \|S2 le l2= 12dB f=lG H z U nit in mm M A X IM U M RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SC4839	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA TENTATIVE HN9C10FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 flFT um • ■ ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • U nit in mm TWO devices are built in to the super-thin and ultra super mini 2.1 ± 0.1	OCR Scan	HN9C10FT 2SC5261 2SC5086 500MHz --20mA, 1000M	PDF
2SC1923-O Abstract: No abstract text available Text: 2SC1923 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR H IG H FR EQUENCY A M P LIF IE R A PP LIC A T IO N S . FM , RF, M IX , IF A M P LIF IE R A P P LIC A T IO N S . • Small Reverse Transfer Capacitance : Cre = 0.7pF Typ. • Low Noise Figure : NF = 2.5dB (Typ.) (f= 100MHz)	OCR Scan	2SC1923 100MHz) 2SC1923-O	PDF
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn	PDF
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60	PDF
transistor K 2056 Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz	OCR Scan		PDF
2N6665 Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953 Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed	OCR Scan	SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953	PDF

TRANSISTOR NPN EPITAXIAL SILICON ZG Search Results

TRANSISTOR NPN EPITAXIAL SILICON ZG Result Highlights (5)

TRANSISTOR NPN EPITAXIAL SILICON ZG Datasheets Context Search

transistor marking zg

ABE 422

Transistor BFr 99

bfr 547

2SC2783

transistor c 5855

Untitled

2-13B1A

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bly 2 10

2SC5086

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2SC1923-O

W1P 59 transistor

BFG55A

transistor K 2056

2N6665