TRANSISTOR NPN 5GHZ Search Results

TRANSISTOR NPN 5GHZ Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

TRANSISTOR NPN 5GHZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU510 BFU510 MSB842 125104/00/04/pp11	PDF
10GHz oscillator Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ	PDF
4 pin dual-emitter Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587 Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2002 Jan 28 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 BFU540 MSB842 125104/00/04/pp11	PDF
4 pin dual-emitter Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure	Original	M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN	PDF
NTE63 Abstract: No abstract text available Text: NTE63 Silicon NPN Transistor High Gain, Low Noise Amp Description: The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.	Original	NTE63 NTE63	PDF
IC 7555 datasheet Abstract: NE 7555 200E 400E 500E HFA3102 HFA3102B96 NF50 UPA102G Text: HFA3102 Data Sheet May 2003 FN3635.4 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array	Original	HFA3102 FN3635 HFA3102 10GHz) 10GHz IC 7555 datasheet NE 7555 200E 400E 500E HFA3102B96 NF50 UPA102G	PDF
pspice Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1 Text: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array	Original	HFA3102 HFA3102 10GHz) 10GHz pspice NE 7555 500E 800E HFA3102B HFA3102B96 NF50 UPA102G UHF-1	PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF
10GHz oscillator Abstract: Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ HFA3102 UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B Text: HFA3102 TM Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array	Original	HFA3102 HFA3102 10GHz) 10GHz 1-888-INTERSIL 10GHz oscillator Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B	PDF
H3101B Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration	PDF
HFA3102BZ96 Abstract: NE 7555 HFA3102 HFA3102B96 HFA3102BZ NF50 UPA102G Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array	Original	HFA3102 FN3635 HFA3102 10GHz) 10GHz HFA3102BZ96 NE 7555 HFA3102B96 HFA3102BZ NF50 UPA102G	PDF
HFA3101 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz	PDF
transistor npn c 9012 Abstract: HFA3101BZ 5GHz band pass filter Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while	Original	HFA3101 HFA3101 10GHz) FN3663 UPA101 transistor npn c 9012 HFA3101BZ 5GHz band pass filter	PDF

Untitled Abstract: No abstract text available Text: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array	Original	HFA3102 FN3635 HFA3102 10GHz) 10GHz	PDF
Untitled Abstract: No abstract text available Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640F BFP640may	PDF
160711 Abstract: 59018 transistor 5-1147 transistor 59018 123078 154543 39058 TARF1509U 59818 68207 Text: Preliminary TARF1509U NPN Planer RF TRANSISTOR SOT-323 □ DESCRIPTION unit : mm The TARF1509U is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT323 package	Original	TARF1509U OT-323 TARF1509U OT323 000GHz 200GHz 400GHz 600GHz 800GHz 160711 59018 transistor 5-1147 transistor 59018 123078 154543 39058 59818 68207	PDF
acs sot-343 Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560	PDF
ice 0565 Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157 Text: THN6501S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6501S is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES	Original	THN6501S OT-23 THN6501S 00GHz 800GHz 000GHz 200GHz 400GHz 600GHz ice 0565 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157	PDF
marking re Abstract: BFP640 BGA420 T-25 Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 marking re BFP640 BGA420 T-25	PDF
bfp640 Abstract: BFP640/F Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 VPS05605 OT343 bfp640 BFP640/F	PDF
620 sot-343 Abstract: acs sot-343 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343	PDF
SL362C Abstract: 362C plessey SL360 High Speed Switches SL360G Text: PLESSEY SEMICONDUCTORS 12E 1 7ESG513 0GQ773tl ?\| SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close	OCR Scan	7ESG513 0GQ773tl SL360G SL362C SL360G SL362C 60MHz) SL360] 60MHz 362C plessey SL360 High Speed Switches	PDF
815 transistor Abstract: HFA3101 3101-B noise cancellation IC 3101b Text: 80 HARRIS HFA3101 SEMICONDUCTOR Gilbert Cell UHF Transistor Array November 1996 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded water UHF-1 SOI	OCR Scan	HFA3101 HFA3101 10GHz) 10GHz 815 transistor 3101-B noise cancellation IC 3101b	PDF

TRANSISTOR NPN 5GHZ Search Results

TRANSISTOR NPN 5GHZ Result Highlights (5)

TRANSISTOR NPN 5GHZ Datasheets Context Search

Untitled

10GHz oscillator

4 pin dual-emitter

Untitled

4 pin dual-emitter

NTE63

IC 7555 datasheet

pspice

BFP620 acs

10GHz oscillator

H3101B

HFA3102BZ96

HFA3101

transistor npn c 9012

Untitled

Untitled

160711

acs sot-343

ice 0565

marking re

bfp640

620 sot-343

SL362C

815 transistor