Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR NPN 2A SWITCHING APPLICATIONS Search Results

    TRANSISTOR NPN 2A SWITCHING APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 2A SWITCHING APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1162

    Abstract: Darlington NPN Silicon Diode HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON darlington power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 400 Min. @IC= 2A ·High Switching Speed ·Low Collector Saturation Voltage APPLICATIONS ·Designed for high voltage, low speed switching industrial


    Original     		PDF VCC150V 2SD1162 Darlington NPN Silicon Diode HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON darlington power transistor

    ZUMT720

    Abstract: ZUMT619 DSA003732
    Text: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		PDF Super323TM OT323 ZUMT619 500mW ZUMT720 100ms ZUMT720 ZUMT619 DSA003732

    npn switching transistor Ic 100mA

    Abstract: ZUMT619 ZUMT720
    Text: Super323  SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat)


    Original     		PDF Super323TM OT323 ZUMT619 500mW ZUMT720 100ms npn switching transistor Ic 100mA ZUMT619 ZUMT720

    NPN transistor 8050d

    Abstract: BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA NPN transistor 8050d BR 8050 D transistor br 8050 8050c transistor BR 8050 8050c 8050 TRANSISTOR PNP st 8050d BR 8050D 8050 pnp transistor

    BR 8050 D

    Abstract: NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d
    Text: ST 8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As


    Original     		PDF 100mA BR 8050 D NPN transistor 8050d BR 8050 transistor 8550 st 8050d transistor br 8050 8050 TRANSISTOR PNP 8050c 8050 pnp transistor 8050d

    PBSS4240

    Abstract: No abstract text available
    Text: PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications


    Original     		PDF PBSS4240 Tamb25OC 100mA, 500mA, 750mA, 200mA 100mA 100mA 100MHz PBSS4240

    Untitled

    Abstract: No abstract text available
    Text: PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ․Low collector-emitter saturation voltage ․High current capability ․Improved device reliability due to reduced heat generation. APPLICATIONS ․Supply line switching circuits ․Battery management applications


    Original     		PDF PBSS4240 Tamb25OC 100mA, 500mA, 750mA, 200mA 100mA 100mA 100MHz

    MMBT8050

    Abstract: MMBT8050 BR mmbt8050 sot-23
    Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package


    Original     		PDF MMBT8050 OT-23 MMBT8050 MMBT8050 BR mmbt8050 sot-23

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3880 NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features


    Original     		PDF EN3880 2SC4737 2084B 2SC4737]

    Untitled

    Abstract: No abstract text available
    Text: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications


    Original     		PDF PBSS4240 Tamb25- 100mA, 500mA, 750mA, 200mA; 100mA; 100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: ST PBSS4240 40V; 2A NPN Low VCE sat (BISS) Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capability ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙Supply line switching circuits ˙Battery management applications


    Original     		PDF PBSS4240 Tamb25 100mA, 500mA, 750mA, 200mA; 100mA; 100mA 100MHz

    2SC4737

    Abstract: ITR07514 ITR07515 ITR07516 ITR07517
    Text: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features


    Original     		PDF ENN3880A 2SC4737 2084B 2SC4737] 2SC4737 ITR07514 ITR07515 ITR07516 ITR07517

    Untitled

    Abstract: No abstract text available
    Text: STC4250L NPN Silicon Transistor PIN Connection Applications • Power amplifier application • High current switching application Features • High current : IC=2A • Complementary pair with STA3250L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information


    Original     		PDF STC4250L STA3250L STC4250 O-92L KSD-T0D013-000

    STA3250

    Abstract: SMD iC MARKING code 1A marking 1A SOT-89 STA325 STA3250F
    Text: STC4250F Semiconductor NPN Silicon Transistor Applications • Power amplifier application • High current switching application Features • • • • Low saturation voltage: VCE sat =0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=2A


    Original     		PDF STC4250F STA3250F STC4250F OT-89 KSD-T5B007-001 STA3250 SMD iC MARKING code 1A marking 1A SOT-89 STA325 STA3250F

    2SCR542P

    Abstract: T100
    Text: Midium Power Transistors 30V / 5A 2SCR542P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) (1) 2) High speed switching  Applications


    Original     		PDF 2SCR542P 100mA) R0039A 2SCR542P T100

    2SCR512

    Abstract: 2SCR512P T100
    Text: Midium Power Transistors 30V / 2A 2SCR512P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching  Applications


    Original     		PDF 2SCR512P 700mA R0039A 2SCR512 2SCR512P T100

    T100

    Abstract: 2SCR553P
    Text: Midium Power Transistors 50V / 2A 2SCR553P  Structure NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm)  Features 1) Low saturation voltage, typically VCE (sat) = 0.13V (Max.) (IC / IB= 700mA / 35mA) (1) 2) High speed switching  Applications


    Original     		PDF 2SCR553P 700mA R0039A T100 2SCR553P

    2N6036

    Abstract: 2N6039 NPN VCBO 80V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector–Emitter Sustaining Voltage: VCEO SUS = 80V(Min) ·High DC Current Gain: hFE = 750(Min)@IC= 2A ·Complement to Type 2N6036 APPLICATIONS ·Designed for general purpose switching and amplifier


    Original     		PDF 2N6036 2N6036 2N6039 NPN VCBO 80V

    ZTX449

    Abstract: No abstract text available
    Text: PNP Silicon Planar Medium Power Transistor ZTX549 FEATURES • 1W power dissipation at Tsmb = 2 5 °C • 2A peak pulse current • Excellent gain characteristics up to 2A pulsed • Low saturation voltages • Fast switching • NPN complementary type available


    OCR Scan     		PDF ZTX549 ZTX449 300/is. ZTX449

    zener Diode B21

    Abstract: No abstract text available
    Text: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching o f L load motor unit:mm drivers, printer hammer drivers, relay drivers . 2084B Features


    OCR Scan     		PDF ENN3880A 2SC4737 2084B zener Diode B21

    Untitled

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)


    OCR Scan     		PDF BUT12/12A BUT12A BUT12 100mA,

    2SA1296

    Abstract: 2SC3266
    Text: TO SH IBA 2SC3266 TOSHIBA TRANSISTOR POWER AMPLIFER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3266 Unit in mm POWER SWITCHING APPLICATIONS • • . 5.1 MAX. Low Saturation Voltage : Vq ^ (sat) = 0.5V (Max.) (l£ = 2A) Complementary to 2SA1296


    OCR Scan     		PDF 2SC3266 2SA1296 SC-43 2SA1296 2SC3266

    2SC5172

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5172 2 S C 5 1 72 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS 10 ±0.3 Excellent Switching Times : tr = 0.5/^s (Max.), tf=0.3^s (Max.) at l£ = 2A High Collector Breakdown Voltage : V0 e o = 4OOV


    OCR Scan     		PDF 2SC5172 10//s* 100//S r-10ms 2SC5172

    2SC4737

    Abstract: No abstract text available
    Text: Ordering number:EN 3880 No.3880 2SC4737 NPN Epitaxial Planar Silicon Transistor I 50V/2A Driver Applications Applications . Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . F eatures . High DC current gain. • WideASO.


    OCR Scan     		PDF 2SC4737 2SC4737