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    TRANSISTOR NPN 2 WATT Search Results

    TRANSISTOR NPN 2 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR NPN 2 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD139

    Abstract: BD140 BUX84 BUX85 BD139 fall time BD139 time
    Text: ON Semiconductort BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 r14525 BUX85/D BD139 BD140 BUX84 BD139 fall time BD139 time

    2N6191

    Abstract: 2N5337 IC 7403 AM503 MJE1320 MR856 P6302
    Text: ON Semiconductort NPN Silicon Power Transistor MJE1320 SWITCHMODEt Series POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated SWITCHMODE


    Original     		PDF MJE1320 220AB r14525 MJE1320/D 2N6191 2N5337 IC 7403 AM503 MJE1320 MR856 P6302

    BD139

    Abstract: BD139 h parameters BD140 BUX84 BUX85 BD139 fall time
    Text: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 r14525 BUX85/D BD139 BD139 h parameters BD140 BUX84 BD139 fall time

    BD139 fall time

    Abstract: transistor 400 volts.50 amperes BD139 time
    Text: ON Semiconductor BUX85 SWITCHMODEt NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 BD139 BD140 BD139 fall time transistor 400 volts.50 amperes BD139 time

    2N6255

    Abstract: 4 watt VHF
    Text: 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and


    Original     		PDF 2N6255 To-39 56-570-65/3B 2N6255 4 watt VHF

    2SA1046

    Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    Original     		PDF BUX85 BUX85 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA1046 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100

    1030 PULSED 32uS MODE-S

    Abstract: 700 v power transistor
    Text: PH1090-700B Avionics Pulsed Power Transistor—700 Watts, 1.03-1.09 GHz, 32µs Pulse, 2% Duty Features • • • • • • • • • Outline Drawing1 Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    Original     		PDF PH1090-700B Transistor--700 PH1090-700B 1030 PULSED 32uS MODE-S 700 v power transistor

    j139

    Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
    Text: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    OCR Scan     		PDF BD179 BD180 Q0fi4713 O-22SAA j139 0395 ADC BD180 3268 127 D TRANSISTOR H127

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


    OCR Scan     		PDF MRF581 transistor 81 110 w 63

    2sc1970

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2 SC 1970 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio applications. 9.1 ± 0.7 FEATURES Dimensions in mm


    OCR Scan     		PDF 2SC1970 2sc1970

    2SC1945

    Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2


    OCR Scan     		PDF 2SC1945 27MHz O-220 27MHz. T-30E TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945

    choke vk200

    Abstract: VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B
    Text: MRF5174 silicon Tlie RF Line 2 W — 400 M Hz R F POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for wideband iarge-signal driver and predriver amplifier stages in the 200*600 M H z frequency range. • Specified 28*Volt, 400 -M H z Characteristics Output Power - 2.0 Watts


    OCR Scan     		PDF MRF5174 28-Volt, 400-MHz choke vk200 VK200 ferrite mrf5174 VK200 r.f choke VK200 ferrite choke Allen Bradley 706 vk200 ferrite bead type 2951 eb 1361 VK200/20-4B

    sm 0038

    Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
    Text: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.


    OCR Scan     		PDF b3b72S4 20atlc BDY58 AN415A) sm 0038 K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B

    2SC1945

    Abstract: 2SC1945 Transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES « S 3 .6 ± 0 .2


    OCR Scan     		PDF 2SC1945 2SC1945 27MHz O-220 27MHz. 2SC1945 Transistor

    2N3440A

    Abstract: No abstract text available
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 PACKAGE NPN TO-39 Hr ¡11 NPN TO-5 hr H/ VcEO Ic DEVICE TYPE sus VOLTS (max) AMPS V Vce 2N1479A 40 1.5 20-60@.2/4 2N1480A 55 1.5 2N1481A 40 2N1482A hFE@ VcE(j»t) pr D* WATTS (MHz) 1.4@.2/,02 5


    OCR Scan     		PDF O-39/TO-5 2N1479A 2N1480A 2N1481A 2N1482A 2N1714A 2N1715A 2N1716A 2N1717A 2N1890 2N3440A

    transistor 2N43

    Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^*FE@ VcE<sat) IC/ ^ C E pr D * WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2


    OCR Scan     		PDF 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 transistor 2N43

    Motorola AN222A

    Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
    Text: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR


    OCR Scan     		PDF MJ10023/D MJ10023 Motorola AN222A application MJ10023 U430B motorola 222A motorola SPS bipolar

    1000 volt pnp transistor

    Abstract: IC 7424 800 volt PNP transistor
    Text: PRELIMINARY SFT5321/23-28D SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 2 AMP NPN - 2 AMP PNP 75 VOLT NPN - 75 VOLT PNP NPN AND PNP BIPOLAR COMPLEMENTARY TRANSISTOR Designer’s Data Sheet


    OCR Scan     		PDF 670-SSDI SFT5321/23-28D 500mA, 500mA) 10MHz) 1000 volt pnp transistor IC 7424 800 volt PNP transistor

    bux85

    Abstract: Motorola Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 60 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.


    OCR Scan     		PDF BUX85 21A-06 O-22QAB BUX85 Motorola Bipolar Power Transistor Data

    2sc1972

    Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2


    OCR Scan     		PDF 2SC1972 175MHz O-220 175MHz. 2SC1972 175MHz transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e RF Line 5 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 2 0 0 -6 0 0 M H z frequency range.


    OCR Scan     		PDF MRF5175

    ms 7254 ver 1.1

    Abstract: ms 7254 ver 3.0 T557
    Text: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS


    OCR Scan     		PDF L3b75S4 MJE13070 MJE13070 ms 7254 ver 1.1 ms 7254 ver 3.0 T557

    2n5642

    Abstract: 2N5642 motorola 2N5642 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5642 T he R F L in e 20 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed prim arily for wideband large-signal am plifier stages in the 1 2 5 -1 7 5 M H z frequency range. •


    OCR Scan     		PDF 2N5642 2n5642 2N5642 motorola 2N5642 equivalent

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20157 20 Watts, 1.35-1.85 GHz RF Power Transistor Description The 20157 is an NPN com mon base RF power transistor intended for 2 2 -2 6 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF