TRANSISTOR N10G Search Results

TRANSISTOR N10G Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR N10G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
N10G Abstract: t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTD12N10 NTD12N10/D N10G t12n10g NTD12N10G t12 n10g NTD12N10 369D NTD12N10T4 NTD12N10T4G transistor N10G	PDF
t12n10g Abstract: n10g t12 n10g NTD12N10G n10-g NTD12N10 369D AN569 NTD12N10T4G t12n10 Text: NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTD12N10 NTD12N10/D t12n10g n10g t12 n10g NTD12N10G n10-g NTD12N10 369D AN569 NTD12N10T4G t12n10	PDF
NTD12N10 Abstract: No abstract text available Text: NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature	Original	NTD12N10 NTD12N10/D NTD12N10	PDF
RS-274-D Abstract: facit N4000 allen bradley 5572 pclos 40N04 5609 dec BYY10 ABS Wheel Speed Sensor LT 5252 LT 5251 Text: Allen-Bradley 9/Series CNC Grinder Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken	Original	UM514A-- RS-274-D facit N4000 allen bradley 5572 pclos 40N04 5609 dec BYY10 ABS Wheel Speed Sensor LT 5252 LT 5251	PDF
allen bradley 8601 Abstract: g80 n60 allen bradley contactor c60 RS-274-D Lathe spindle report on project of Parking lot system using PLC allen bradley 5572 epson printer m150 SHAFT ENCODER ch 8501 TRANSISTOR SUBSTITUTION Text: Allen-Bradley 9/Series CNC Lathe Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken to assure that	Original	UM511A-- allen bradley 8601 g80 n60 allen bradley contactor c60 RS-274-D Lathe spindle report on project of Parking lot system using PLC allen bradley 5572 epson printer m150 SHAFT ENCODER ch 8501 TRANSISTOR SUBSTITUTION	PDF
g80 n60 Abstract: RS-274-D allen bradley 5572 relay g59 epson printer m150 G15N60 LT 5210 facit N4000 transistor full 2000 to 2012 LT 5242 H Text: Allen-Bradley 9/Series CNC Mill Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken to assure that	Original	UM513A-- g80 n60 RS-274-D allen bradley 5572 relay g59 epson printer m150 G15N60 LT 5210 facit N4000 transistor full 2000 to 2012 LT 5242 H	PDF