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    TRANSISTOR N Y Search Results

    TRANSISTOR N Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR N Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6079

    Abstract: No abstract text available
    Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6079 2N6079 com/2n6079

    2N697

    Abstract: No abstract text available
    Text: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N697 2N697 O-205AD com/2n697

    2n6287

    Abstract: No abstract text available
    Text: 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. . Page 1 of 1 Enter Your Part # Home Part Number: 2N6287 Online Store 2N6287 Diodes 20 Transistors A complementary N -P-N and P-N -P monolithic Integrated Circuits darlington power transistor. High voltage rating 100 V


    Original     		PDF 2N6287 2N6287 com/2n6287

    BUL416

    Abstract: BUL416B
    Text: BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n VERY HIGH SWITCHING SPEED n FULLY CHARACTERISEZ AT 125 oC n LOW SPREAD OF DYNAMIC PARAMETERS Figure 1: Package 3


    Original     		PDF BUL416 O-220 BUL416 BUL416B

    BFR65

    Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
    Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.


    OCR Scan     		PDF BFQ34 btS3T31 BFR65 BFR65 multi-emitter transistor n 431 transistor Transistor PJ 431

    blw95

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a


    OCR Scan     		PDF bbS3T31 0DS1S14 blw95

    BLX92A

    Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
    Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF BLX92A BLX92A BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944

    transistor TIP3055

    Abstract: No abstract text available
    Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.


    OCR Scan     		PDF TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055

    NTM2369

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NTM2369 HIGH SPEED SW ITC H IN G . GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E S C R IP T IO N T he N T M 2 3 6 9 is N P N transistor, designed for general purpose am plifier and high speed sw itching applications for h yb rid 1C.


    OCR Scan     		PDF NTM2369 NTM2369

    yn 1018

    Abstract: MPF820 RS-50S Scans-00100834
    Text: MPF820 silicon Advance Inform ation JUNCTION FIELD-EFFECT TRANSISTOR SILICON N-CHANNEL JUNCTION FIELD-EIFFECT TRANSISTOR SILIC O N N -CHANNEL . . . depletion mode jun ctio n fie ld -e ffect transistor designed fo r low noise grounded gate RF a m plifier applications.


    OCR Scan     		PDF MPF820 RS-50S! 330pF yn 1018 MPF820 RS-50S Scans-00100834

    thyristor firing circuits

    Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A
    Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits


    OCR Scan     		PDF ca3096 ca3096a CS-23846 16-Liad CA3096> 100/iA, CA3018, CA3018A 120MHz lc-10mA thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A

    K 3699 transistor

    Abstract: BLY88A 3699 npn pscw
    Text: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF GGmi32 BLY88A K 3699 transistor BLY88A 3699 npn pscw

    Transistor p1f

    Abstract: No abstract text available
    Text: • b b S B ' m 002Sflfl0 TTfl B A P X N AUER PHILIPS/DISCRETE PMBT5550 b7E T> yv SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.


    OCR Scan     		PDF 002Sflfl0 PMBT5550 OT-23 Transistor p1f

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    Untitled

    Abstract: No abstract text available
    Text: I I • MAINTENANCE TYPE bbS3T31 a03^7Mfi 360 ■ APX B L y g 3 A N ANER PHI LIPS/DISCRETE hlZ D_ V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF bbS3T31 005T7S7 BLY93C

    2N3054

    Abstract: C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054
    Text: 2 N 3054 NPN Power transistor for AF amplifier and switching applications 2 N 3 0 5 4 is a single-diffused N P N silicon transistor in a T O -6 6 case. The collector is electrically connected to the case. The transistor 2 N 3 0 5 4 is particularly suitable


    OCR Scan     		PDF 2N3054 Q62702-U Q62901-B Q62901-B11 200mA 160mA 120mA 100mA C4125 4392n 3054 booc power transistors dc-27 transistor 2n3054

    Untitled

    Abstract: No abstract text available
    Text: L _ _ _ _ _ N AMER PHILIPS/DISCRETE ObE D • bbSB'lBl O O l S O n & _ ■ LWE2015R y y P 2 i - o r MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier up to 2,3 GHz in c.w.


    OCR Scan     		PDF LWE2015R S3T31 DQ1S033

    transistor buv 90

    Abstract: BCY 85 Q60203-Y66 BCY 66
    Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).


    OCR Scan     		PDF Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66

    transistor marking T2

    Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
    Text: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base


    OCR Scan     		PDF BCV64 BCV64B OT-143 BCV63. DDEU55b transistor marking T2 TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor

    MP-25

    Abstract: NP40N06CLC NP40N06DLC NP40N06ELC TO-220SMD
    Text: Preliminary Product Information MOS Field Effect Transistor NP40N06CLC,NP40N06DLC,NP40N06ELC N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION This product is N-channel MOS Field Effect Transistor designed for high voltage switching application.


    OCR Scan     		PDF NP40N06CLC NP40N06DLC NP40N06ELC 175dgree 027QMAX. 1000pF O-220AB O-262AA O-220SMD MP-25 NP40N06ELC TO-220SMD

    BFR64

    Abstract: multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798 BFQ34
    Text: N AMER PHILIPS/DISCRETE asE d m bb53i3i aoi?ciT? a B FQ 34 is recommended for new design BFR64 T - 3 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N m ulti-em itter transistor in a capstan envelope. The transistor has extrem ely good intermodulation properties and high power gain.


    OCR Scan     		PDF BFQ34 BFR64 7z72605 BFR64 multi-emitter transistor BFR64 DATA vk200 philips vk200 coil VK-200-10 7Z7Z609 Transistor D 798

    BC450

    Abstract: No abstract text available
    Text: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly


    OCR Scan     		PDF BC450 300mA 625mW 100mA 100MHz 300/iS.

    2SK1492

    Abstract: MEI-1202 TEA-1035 2sk14 TC239
    Text: DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel M O S Field Effect Transistor de­ in millimeters signed fo r high voltage switching applications.


    OCR Scan     		PDF 2SK1492 IEI-1209) MEI-1202 TEA-1035 2sk14 TC239

    Untitled

    Abstract: No abstract text available
    Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter


    OCR Scan     		PDF BD131 OT-32 BD132. DD34243 BD132 003424b