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    TRANSISTOR MOSFET BF998 Search Results

    TRANSISTOR MOSFET BF998 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MOSFET BF998 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R OT143 OT143R BF998, application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note

    bf998

    Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R

    BF998

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W

    TRANSISTOR mosfet BF998

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W TRANSISTOR mosfet BF998

    BF998

    Abstract: application BF998 bf998w 3G1 transistor
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W application BF998 3G1 transistor

    bf998

    Abstract: application BF998 TRANSISTOR mosfet BF998
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration


    Original     		PDF BF998. BF998 BF998R OT143 OT143R BF998, BF998R application BF998 TRANSISTOR mosfet BF998

    BF998

    Abstract: G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge
    Text: BF 998R Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF998 Q62702-F1177 OT-143R Oct-23-1996 BF998 G1 TRANSISTOR Marking G2 mosfet tetrode TRANSISTOR mosfet BF998 BF998 marking code BF marking code BF transistor datasheet transistor marking G1 electrostatic discharge

    BF998W

    Abstract: SOT 343 MARKING BF BF998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT-343 Cha00 EHT07305 EHT07306 May-05-1999 BF998W SOT 343 MARKING BF BF998

    BF998

    Abstract: bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998
    Text: BF998 3 Silicon N-Channel MOSFET Tetrode 4 • Short-channel transistor with high S/C quality factor 2 • For low-noise, gain-controlled input stages up to 1 GHz 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF998


    Original     		PDF BF998 VPS05178 OT143 Apr-14-2003 BF998 bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998

    SOT-343

    Abstract: G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note
    Text: BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF998 Q62702-F1586 OT-343 Jul-30-1996 SOT-343 G1 TRANSISTOR TRANSISTOR mosfet BF998 SOT 343 MARKING BF mosfet tetrode Marking G2 transistor marking code G1 BF998 marking code 1D TRANSISTOR bf998 mosfet tetrode application note

    bf998

    Abstract: bf998 mosfet tetrode application note VPS05178
    Text: BF998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178

    BF998W

    Abstract: 998 transistor bf998 102001 transistor BF 998
    Text: BF998W Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor 4 with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original     		PDF BF998W VPS05605 OT343 EHT07305 EHT07306 Aug-10-2001 BF998W 998 transistor bf998 102001 transistor BF 998

    BF998R

    Abstract: 998 transistor transistor BF 998
    Text: BF998R Silicon N-Channel MOSFET Tetrode  Short-channel transistor with high S/C quality factor  For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration


    Original     		PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998

    Untitled

    Abstract: No abstract text available
    Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF998. BF998 OT143 BF998R OT143R

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance


    Original     		PDF BF998WR R77/02/pp13

    BF998WR

    Abstract: dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance


    Original     		PDF BF998WR R77/02/pp13 BF998WR dual-gate

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    TRANSISTOR mosfet BF998

    Abstract: BF998 SIEMENS BF998 marking code
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Shorl-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BF998 Q62702-F1586 OT-343 TRANSISTOR mosfet BF998 BF998 SIEMENS BF998 marking code

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF BF998 Q62702-F1586 OT-343 fl235bG5

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BF998WR N-channel dual-gate MOS-FET PINNING FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz.


    OCR Scan     		PDF BF998WR OT343R

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high


    OCR Scan     		PDF bbS3T31 QQ23b34 BF998 OT143 LtiS3T31

    MAM184

    Abstract: MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF998 FEATURES APPLICATIONS • Short channel transistor with high ratio I YfSl / Cis • VHF and UHF applications such as television tuners with 12 V supply voltage and professional


    OCR Scan     		PDF OT143 BF998 MAM184 MAM184 OT143) MOSFET Tetrode mosfet vhf power amplifier tetrode transistor BF998 mop top marking

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet sta tu s Product specification date o f issue April 1991 FEATURES BF998 Silicon n-channel dual gate M O S -FET QUICK REFERENCE DATA ratio |Y s l/Cis. • Low noise gain controlled am plifier to 1 GHz. PARAMETER SYMBOL • Short channel transistor with high


    OCR Scan     		PDF BF998 OT143 UCB345