2SC5053
Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate
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2SC5053
SC-62)
2SC5053;
2SA1900
2SC5053
bo78
2SC5053 NPN
transistor bb3
marking code 43b
marking CODE 43B transistor
2SA1900
T100
Transistor npn
43B MARKING
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transistor SMD DK
Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25
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2SB798
OT-89
-100mA)
100TYP.
transistor SMD DK
dm SMD MARKING sot-89
smd transistor marking DK
marking dk sot-89
TRANSISTOR SMD PNP 1A
smd MARKING dk
dk SOT89
DM sot-89
TRANSISTOR MARKING DM
2SB798
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Untitled
Abstract: No abstract text available
Text: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer
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BSP110
OT223
0D255D5
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Untitled
Abstract: No abstract text available
Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed
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bL53T31
0025b57
BST86
0D35bbD
BST86
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N6A07
Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
Text: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMHN6A07T8
N6A07
N6A07
TRANSISTORS 132 GD
ZXMHN6A07T8
two transistors
sm9a
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .
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i707L
T-31-n
2SC377
1947B
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C200H-DA004
Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
Text: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to
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C200H-DA003
C200H-OD217
C200H-MAD01
C200H-IDS01-V1
C200H-DA004
C200H-IDS21
CS1W-MAD44
CS1W-AD041
CS1W-AD081
CS1W-DA041
C200H-DA004
CS1W-MD292
TRANSISTOR GUIDE
DRT1-TS04P
OC224
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D3207
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF32D7/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s
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MMDF32D7/D
D3207
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MMDF3304
Abstract: motorola linear
Text: MOTOROLA Order this document by MMDF3304/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUALTMOS POWER MOSFET 7.3 AMPERES 30 VOLTS RDS on = 25 m il WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s
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MMDF3304/D
MMDF3304
motorola linear
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melcher bM 3000
Abstract: melcher LM 1000 LM 2000 melcher lm 3000 melcher Melcher CM-1000 Melcher bM 2000 melcher bM 1000 Melcher dc-dc converter bm 1000 melcher DM 3000 melcher am 3000 converter
Text: M-Family DC-DC Converters <100 W 50 W DC-DC AC-DC Converters Rugged Environment M-Family Class I Equipment Single output: series AM.LM 1000 Dual output: series AM.LM 2000 Triple output: series AM.LM 3000 Class II Equipment (double insulation) Single output: series CMZ/DMZ/LMZ 1000
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1E-006
Abstract: IRGB4062DPBF
Text: IRGB4062DPbF IRGP4062DPbF IRGP4062D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA
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IRGB4062DPbF
IRGP4062DPbF
IRGP4062D-EPbF
O-247AD
1E-006
IRGB4062DPBF
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Optical encoder mouse encoder
Abstract: diagram toshiba a100 encoder wheel mouse scroll MOUSE ENCODER output ADNS-2610 3 pin mouse scroll encoder computer mouse circuit MOUSE ENCODER power 4 pin phototransistor Mouse TC9350BFN-T00
Text: TC9350BFN-T00,TC9350BFN-T01 TOSHIBA CMOS Type Integrated Circuit Silicon Monolithic TC9350BFN-T00,TC9350BFN-T01 USB Mouse Controller IC The TC9350BFN is a USB 1.1 mouse controller IC. It can communicate with Agilent's ADNS-2610 optical mouse sensor. Features
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TC9350BFN-T00
TC9350BFN-T01
TC9350BFN
ADNS-2610
TC9350BFN-T01
Optical encoder mouse encoder
diagram toshiba a100
encoder wheel mouse scroll
MOUSE ENCODER output
3 pin mouse scroll encoder
computer mouse circuit
MOUSE ENCODER power
4 pin phototransistor Mouse
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IRGB4062D
Abstract: IRGP4062D
Text: PD - 97190 IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
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IRGB4062DPbF
IRGP4062DPbF
O-247AC
IRGB4062D
IRGP4062D
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2SC3773
Abstract: SANYO SS 1001
Text: SANYO SEMICONDUCTOR CORP 25E D 7 ‘1c1 7 0 7 b 0 0 G b_ö3 1 T T -3/ -/7 2SC3773 NPN Epitaxial Pianar Silico n Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1946B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band
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n707b
2SC3773
1946B
2SC3773
SANYO SS 1001
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SRT2-ID16-1
Abstract: No abstract text available
Text: CompoBus/S New Products • Programmable Slaves • SYSMAC CPM2C CPU Units with CompoBus/S Master Functions • Waterproof Terminals • Sensor Terminals • Remote I/O Modules Cat. No. Q103-E1-7 Maximum Communications Cycle Time of Only 1 ms Long-distance Communications Mode
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Q103-E1-7
SRT2-ID16-1
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TRANSISTOR 2067
Abstract: No abstract text available
Text: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)
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FC110
T-35-H
22kfl,
FC110
2SC3396,
TRANSISTOR 2067
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IC TA 31101
Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the
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00Q7M40
FC102
FC102
2SC4211,
IC TA 31101
pa 2030a equivalent
pa 2030a
ts 3110 TRANSISTOR
2SC4211
C-03
DDD744S
08/bup 3110 transistor
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NCP2860
Abstract: NCP2860DM277R2
Text: NCP2860 300 mA Very Low Noise, Low Dropout Linear Regulator The NCP2860 is a low noise, low dropout linear regulator that is offered with an output voltage of 2.77 V. It supplies 300 mA from 3.0 V to 6.0 V input. If wished, the “SET’’ pin enables to adjust the output
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NCP2860
NCP2860
r14525
NCP2860/D
NCP2860DM277R2
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C96A
Abstract: 97190D
Text: PD - 97190D IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
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97190D
IRGB4062DPbF
IRGP4062DPbF
O-247AC
C96A
97190D
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P4062
Abstract: IRGB4062DPBF irgp4062dpbf P4062DPbF 1E-006 IRGP4062D TO-247AC Package igbt IRGB4062D IRGB4062
Text: PD - 97190B IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA
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97190B
IRGB4062DPbF
IRGP4062DPbF
O-247AC
P4062
IRGB4062DPBF
irgp4062dpbf
P4062DPbF
1E-006
IRGP4062D
TO-247AC Package igbt
IRGB4062D
IRGB4062
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SANYO marking kf
Abstract: S1U MARKING 2SC3772 VCB5167 marking Sanyo
Text: S A N Y O S E M I C O N D U C T O R C O R P E S E D 7 1 e l 7 7 t G b 2 7 f i T-3H7 2SC3772 NPN Epitaxial Planar Silicon Transistor 2018A UHF OSC, MIX, Low-Noise Wide-Band Amp Applications 1945B Applications . UHF frequency converters, local oscillators, low-noise amplifiers, wide-band
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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transistors BC 458
Abstract: equivalent transistor TL431AC bc DM 0365 R pin EQUIVALENT TL431CDR2G TL431BIDR2G TL431ACDR2G TL431ACDG TL431AILPRMG mc7805 transistor BC 635
Text: TL431, A, B Series, NCV431A, B Programmable Precision References The TL431, A, B integrated circuits are three−terminal programmable shunt regulator diodes. These monolithic IC voltage references operate as a low temperature coefficient zener which is programmable from Vref to 36 V with two external resistors. These
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TL431,
NCV431A,
TL431/D
transistors BC 458
equivalent transistor TL431AC bc
DM 0365 R pin EQUIVALENT
TL431CDR2G
TL431BIDR2G
TL431ACDR2G
TL431ACDG
TL431AILPRMG
mc7805
transistor BC 635
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