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    TRANSISTOR MARKING DM W Search Results

    TRANSISTOR MARKING DM W Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING DM W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FP6142

    Abstract: FP6142-33C5G FP6142-28S5G FP6142-28C5G FP6142-33 FP6142-25S5G 705 transistor FP6142-33S5P 150 mA CMOS Low-Dropout Regulator sot 23-5 FP6142-15S5P
    Text: FP6142 fitipower integrated technology lnc. 500mA Low Noise LDO with Soft Start and Output Discharge Function Description Features The FP6142 is a family of CMOS low dropout LDO regulators with a low dropout voltage of 250mV at 500mA designed for noise-sensitive portable device,


    Original     		PDF FP6142 500mA FP6142 250mV 500mA MO-178-C. SC-70-5 FP6142-33C5G FP6142-28S5G FP6142-28C5G FP6142-33 FP6142-25S5G 705 transistor FP6142-33S5P 150 mA CMOS Low-Dropout Regulator sot 23-5 FP6142-15S5P

    Tantalum phase diagram band gap

    Abstract: supply with dm 100 marking code Z0 5pin FP6142-25S5G
    Text: FP6142 fitipower integrated technology lnc. 500mA Low Noise LDO with Soft Start and Output Discharge Function Description Features The FP6142 is a family of CMOS low dropout LDO regulators with a low dropout voltage of 250mV at 500mA designed for noise-sensitive portable device,


    Original     		PDF FP6142 500mA FP6142 250mV FP6142-1 4-FEB-2010 OT-23-5 Tantalum phase diagram band gap supply with dm 100 marking code Z0 5pin FP6142-25S5G

    transistor SMD DK

    Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25


    Original     		PDF 2SB798 OT-89 -100mA) 100TYP. transistor SMD DK dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798

    N6A07

    Abstract: TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a
    Text: ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V BR DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMHN6A07T8 N6A07 N6A07 TRANSISTORS 132 GD ZXMHN6A07T8 two transistors sm9a

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    C200H-DA004

    Abstract: CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224
    Text: ORDERING GUIDE PRODUCT PERFORMANCE STANDARDS OMRON devices that comply with EC Directives also conform to the related EMC standards so that they can be more easily built into other devices or the overall machine. The actual products have been checked for conformity to


    Original     		PDF C200H-DA003 C200H-OD217 C200H-MAD01 C200H-IDS01-V1 C200H-DA004 C200H-IDS21 CS1W-MAD44 CS1W-AD041 CS1W-AD081 CS1W-DA041 C200H-DA004 CS1W-MD292 TRANSISTOR GUIDE DRT1-TS04P OC224

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		PDF TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent

    h11cx

    Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
    Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled


    Original     		PDF H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins

    melcher bM 3000

    Abstract: melcher LM 1000 LM 2000 melcher lm 3000 melcher Melcher CM-1000 Melcher bM 2000 melcher bM 1000 Melcher dc-dc converter bm 1000 melcher DM 3000 melcher am 3000 converter
    Text: M-Family DC-DC Converters <100 W 50 W DC-DC AC-DC Converters Rugged Environment M-Family Class I Equipment Single output: series AM.LM 1000 Dual output: series AM.LM 2000 Triple output: series AM.LM 3000 Class II Equipment (double insulation) Single output: series CMZ/DMZ/LMZ 1000


    Original     		PDF

    TRANSISTOR L 287 A

    Abstract: 2SD2170 CE marking code diode sc-62
    Text: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage


    OCR Scan     		PDF 2SD2170 OT-89, SC-62) 2SD2170; Para10 2SD2170 2SD2170, TRANSISTOR L 287 A CE marking code diode sc-62

    SL 100 NPN Transistor

    Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
    Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures


    OCR Scan     		PDF BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		PDF 2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING

    35vt

    Abstract: 2SC4639
    Text: Ordering number: EN3482. _ F C 1 2 T R : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon Transistor High-Frequency Amp, AM Applications, Low-Frequency Amp F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN3482. 2SC4639, 35vt 2SC4639

    F3200Z

    Abstract: 050gj TBD 135 Transistor
    Text: MOTOROLA Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F 3200Z WaveFET Motorola Preferred Device Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 11.5 AMPERES


    OCR Scan     		PDF MMDF3200Z/D 3200Z F3200Z 050gj TBD 135 Transistor

    Untitled

    Abstract: No abstract text available
    Text: bt.53^31 0025502 ASS H A P X N AMER PHILIPS/DISCRETE BSP110 fe>7E D _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application with relay, high-speed and line transformer


    OCR Scan     		PDF BSP110 OT223 0D255D5

    Untitled

    Abstract: No abstract text available
    Text: • bL53T31 0025b57 8^13 « A P X N AMER PHILIPS/D ISCR ETE b?E ]> BST86 J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in th in and th ick-film circuits fo r application w ith relay, high-speed


    OCR Scan     		PDF bL53T31 0025b57 BST86 0D35bbD BST86

    transistor marking code 325

    Abstract: BSP110 marking r8v
    Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer


    OCR Scan     		PDF 0G25502 BSP110 OT223 7Z94040 transistor marking code 325 BSP110 marking r8v

    BFS80

    Abstract: BSS123L MWRC BSS123I bfs 417
    Text: MO T O ROLA s c x s t r s /r 15E D I t,3b7ESM QGflbb'il b | f T>D.?-p.5" M A X IM U M RATINGS Unit Symbol Value Drain-Source Voltage V o ss 100 VdC Gate-Source Voltage Vg S ±35 Vdc id <DM 0.17 0.68 Symbol Max Unit PD 225 mW 1.8 mW/°C RftiA 556 °C/W PD 300


    OCR Scan     		PDF BSS123L BFS80 MWRC BSS123I bfs 417

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 2SE D 7T=i707L GG0hñ3S 7 T-31-n 2SC377 4 20 18 A N PN Epitaxial Pianar Silicon Transistor UHF Low-Noise Wide-Band Amp Applications 1947B Applications . UHF low-noise ampi:ifiers, wide-band amplifiers Features . Small noise figure : NF=2.2dB typ f=0.9GHz .


    OCR Scan     		PDF i707L T-31-n 2SC377 1947B

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / M OS FIELD EFFECT TRANSISTOR 2SJ462 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION Package Drawings unit ; mm The 2S J462 is a switching device which can be driven directly 5.7 ± 0 J by an 1C operating at 3 V,


    OCR Scan     		PDF 2SJ462 2SJ462

    d3n03

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs w hich utilize M otorola’s High C ell D ensity H D TM O S process.


    OCR Scan     		PDF MMDF3N03HD d3n03

    d33-02

    Abstract: transistor motorola 351 D3302 motorola linear
    Text: MOTOROLA Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTD3302 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 1° mO WaveFET™ devices are an advanced series of power MOSFETs which utilize M otorola’s


    OCR Scan     		PDF MTD3302/D MTD3302 d33-02 transistor motorola 351 D3302 motorola linear

    D3207

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMDF32D7/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s


    OCR Scan     		PDF MMDF32D7/D D3207

    MMDF3304

    Abstract: motorola linear
    Text: MOTOROLA Order this document by MMDF3304/D SEMICONDUCTOR TECHNICAL DATA Product Preview Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUALTMOS POWER MOSFET 7.3 AMPERES 30 VOLTS RDS on = 25 m il WaveFET devices are an advanced series of power MOSFETs which utilize M otorola’s


    OCR Scan     		PDF MMDF3304/D MMDF3304 motorola linear