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    C96A

    Abstract: 97190D
    Text: PD - 97190D IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97190D IRGB4062DPbF IRGP4062DPbF O-247AC C96A 97190D

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    Abstract: No abstract text available
    Text: PD - 97190D IRGB4062DPbF IRGP4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97190D IRGB4062DPbF IRGP4062DPbF O-247AC