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    P4062DPBF Search Results

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    P4062DPBF Price and Stock

    Infineon Technologies AG IRGP4062DPBF

    IGBT TRENCH 600V 48A TO247AC
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    DigiKey IRGP4062DPBF Tube
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    Avnet Americas IRGP4062DPBF Tube 4 Weeks 1
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    Newark IRGP4062DPBF Bulk 1
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    Win Source Electronics IRGP4062DPBF 62,100
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    International Rectifier IRGP4062DPBF

    IRGP4062 - Insulated Gate Bipolar Transistor, 48A, 600V, N-Channel, TO-247AC '
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    Rochester Electronics IRGP4062DPBF 25 1
    • 1 $3.38
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    ComSIT USA IRGP4062DPBF 125
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    P4062DPBF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C96A

    Abstract: 97190D
    Text: PD - 97190D IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97190D IRGB4062DPbF IRGP4062DPbF O-247AC C96A 97190D

    P4062

    Abstract: IRGB4062DPBF irgp4062dpbf P4062DPbF 1E-006 IRGP4062D TO-247AC Package igbt IRGB4062D IRGB4062
    Text: PD - 97190B IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97190B IRGB4062DPbF IRGP4062DPbF O-247AC P4062 IRGB4062DPBF irgp4062dpbf P4062DPbF 1E-006 IRGP4062D TO-247AC Package igbt IRGB4062D IRGB4062

    Untitled

    Abstract: No abstract text available
    Text: PD - 97190A IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 7190A IRGB4062DPbF IRGP4062DPbF O-247AC

    Untitled

    Abstract: No abstract text available
    Text: PD - 97190D IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97190D IRGB4062DPbF IRGP4062DPbF O-247AC

    97190C

    Abstract: No abstract text available
    Text: PD - 97190C IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 97190C IRGB4062DPbF IRGP4062DPbF O-247AC 97190C

    Untitled

    Abstract: No abstract text available
    Text: PD - 97190A IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF 7190A IRGB4062DPbF IRGP4062DPbF O-247AC

    IRGP4062D

    Abstract: No abstract text available
    Text: PD - 97190E IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA


    Original     		PDF 97190E IRGB4062DPbF IRGP4062DPbF O-247AC IRGP4062D

    IRGB4062D

    Abstract: IRGP4062D
    Text: PD - 97190 IRGB4062DPbF P4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA


    Original     		PDF IRGB4062DPbF IRGP4062DPbF O-247AC IRGB4062D IRGP4062D