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    TRANSISTOR MARKING CODE B4 Search Results

    TRANSISTOR MARKING CODE B4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE B4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CSG3001-18A04

    Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
    Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power


    Original     		PDF 400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04

    PNP TRANSISTOR SOT666

    Abstract: MBK120 PEMB4 transistor K 14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 10 kΩ, R2 = open


    Original     		PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PNP TRANSISTOR SOT666 MBK120 PEMB4 transistor K 14

    pbss4160dpn

    Abstract: transistor smd marking 431.k
    Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 02 — 14 July 2005 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160DPN OT457 SC-74) PBSS4160DPN transistor smd marking 431.k

    Untitled

    Abstract: No abstract text available
    Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		PDF STAC4933 STAC4933 STAC177B

    PT 1017

    Abstract: transistor mark code H1 TL 434 transistor k 2837 HLB122I y1 marking code transistor Y2 MARKING MARK Y1 Transistor
    Text: HI-SINCERITY Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251 183oC 217oC 260oC PT 1017 transistor mark code H1 TL 434 transistor k 2837 y1 marking code transistor Y2 MARKING MARK Y1 Transistor

    PHPT60603NY

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT60603NY 60V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY


    Original     		PDF PHPT60603NY OT669 LFPAK56) PHPT60603PY AECQ-101 PHPT60603NY

    Untitled

    Abstract: No abstract text available
    Text: BAT54WS SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 30 Volts FORWARD CURRENT – 0.2 Ampere SOD-323 FEATURES • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOD-323 MECHANICAL DATA • Case: SOD-323 Plastic


    Original     		PDF BAT54WS OD-323 OD-323 J-STD-020D 2002/95/EC OD-123 OD-523

    transistor marking G9

    Abstract: J4-81 j4 81 MARKING D8
    Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		PDF STAC3933 STAC3933 STAC177B transistor marking G9 J4-81 j4 81 MARKING D8

    Untitled

    Abstract: No abstract text available
    Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160DPN OT457 SC-74) PBSS4160DPN

    PBSS4160DPN

    Abstract: transistor smd marking 431.k MOSFET TRANSISTOR SMD MARKING CODE B4
    Text: PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.


    Original     		PDF PBSS4160DPN OT457 SC-74) PBSS4160DPN transistor smd marking 431.k MOSFET TRANSISTOR SMD MARKING CODE B4

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 January 2014 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61003NY


    Original     		PDF PHPT61003NY OT669 LFPAK56) AEC-Q101

    sot669 footprint

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 13 December 2013 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101 sot669 footprint

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PHPT61003NY 100 V, 3 A NPN high power bipolar transistor 3 February 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY


    Original     		PDF PHPT61003NY OT669 LFPAK56) PHPT61003PY AEC-Q101

    A1807

    Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
    Text: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for


    OCR Scan     		PDF 2SA1807F5 SC-63) A1807 nw-60 pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v

    q406 transistor

    Abstract: nf 820 transistor q406 q406 transistor data
    Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q


    OCR Scan     		PDF Q62702-S638 Q62702-S637 E6288 E6296 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 q406 transistor nf 820 transistor q406 q406 transistor data

    Untitled

    Abstract: No abstract text available
    Text: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]


    OCR Scan     		PDF 2SC2413K 2SC4098 SC-59) SC-70) 2SC2413K, 2SC4098; 2SC4098

    Untitled

    Abstract: No abstract text available
    Text: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323


    OCR Scan     		PDF DQ25T47 PMST4403 OT323 MAM096 bbS3T31

    marking KN sc70

    Abstract: No abstract text available
    Text: UMB4N IMB4A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm • available In ÜMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMB4N and IMB4A; B4 U M B4N (UMT6) I'p V I 0.65 I • • J 0 .6 5 t r( 2r) h iflna c


    OCR Scan     		PDF SC-74) DTA114TKA) SC-70) SC-59) marking KN sc70

    TN3000

    Abstract: MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors
    Text: UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A UMG4N / UMG7N / UMH4N / UMH8N / FMG4A / FMG7A / IMH4A / IMH8A Transistors I Digital Transistor Duai Digital Transistors for Inverter Driver UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A •Features 1 ) Two DTA114T transistors are housed in a UMT or SMT package.


    OCR Scan     		PDF 120mW DTA114T 96-411-C114T) TN3000 MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors

    TRANSISTOR D 2627

    Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


    OCR Scan     		PDF r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: DTB114TK Digital transistor, PNP, with 1 resistor Features Dimensions Units: mm • available in an SMT3 (SMT, SC-59) package DTB114TK (SMT3) • package marking: DTB114TK; E94 • a built-in bias resistor allows inverter circuit configuration without external


    OCR Scan     		PDF DTB114TK SC-59) DTB114TK; DTB114TK