STAC2933
Abstract: No abstract text available
Text: STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
|
Original
|
PDF
|
STAC2933
STAC2933
STAC177B
|
Untitled
Abstract: No abstract text available
Text: STAC4933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
|
Original
|
PDF
|
STAC4933
STAC4933
STAC177B
|
STAC177B
Abstract: No abstract text available
Text: STAC150V2-350E RF power transistor: HF/VHF/UHF RF power N-channel MOSFET Datasheet − production data Features • Operating frequencies up to 40.68 MHz ■ Excellent thermal stability ■ POUT = 350 W with 17 dB gain @ 40.68 MHz/150 V ■ Designed for class E operation
|
Original
|
PDF
|
STAC150V2-350E
Hz/150
2002/95/EC1
STAC177B
STAC150V2-350E
|
transistor marking G9
Abstract: J4-81 j4 81 MARKING D8
Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package
|
Original
|
PDF
|
STAC3933
STAC3933
STAC177B
transistor marking G9
J4-81
j4 81
MARKING D8
|
Untitled
Abstract: No abstract text available
Text: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■
|
Original
|
PDF
|
STAC2943
STAC177B
STAC2943
SD2933,
|