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    TRANSISTOR MARKING BOS Search Results

    TRANSISTOR MARKING BOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING BOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIN 3021-3 STANDARD

    Abstract: DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp
    Text: Operating Instructions VEGASWING 51 - transistor PNP Contents Contents 1 About this document 1.1 1.2 1.3 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 5 5 6


    Original     		PDF 30213-EN-070201 DIN 3021-3 STANDARD DIN 3021-3 tuning fork application note DIN 43650 form c PIEZO DISK 25 MM 30213-EN-070201 namur NE 93 TIP 34 pnp

    13006 TRANSISTOR

    Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 MSC895 13006 TRANSISTOR transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


    Original     		PDF TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note

    PMBFJ620,115

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 PMBFJ620,115

    PMBFJ620

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PDF PMBFJ620 OT363 771-PMBFJ620-T/R PMBFJ620

    NEC 10F triac

    Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
    Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117


    Original     		PDF TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP115 TLP115A TLP116 NEC 10F triac TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin

    g1 TRANSISTOR SMD MARKING CODE

    Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product specification Supersedes data of April 1991 File under Discrete Semiconductors, SC07 1996 Aug 01 Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs


    Original     		PDF BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    FZ74

    Abstract: dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105 TC105303ECT
    Text: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A


    Original     		PDF TC105 300kHz OT-23A OT-23A SC-74A TC105 ma420 D-81739 FZ74 dtc105 si9430 ic FZ749 equivalent transistor K 2767 CAPACITOR TANTALUM 0.033uf 16v 595D CD54 TC105303ECT

    Untitled

    Abstract: No abstract text available
    Text: TC105 PFM/PWM Step-Down DC/DC Controller Features Package Type • • • • 57µA Typ Supply Current 1A Output Current 0.5µA Shutdown Mode 300kHz Switching Frequency for Small Inductor Size • Programmable Soft-Start • 92% Typical Efficiency • Small Package: 5-Pin SOT-23A


    Original     		PDF TC105 300kHz OT-23A OT-23A SC-74A TC105 D-81739 DS21349B-page

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    t1p42

    Abstract: t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 FZT749 TC57
    Text: TC57 Series Linear Regulator Controller FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application at hand. This results in lower dropout operation and often


    Original     		PDF TC57-based FZT749 DS21437A TC57-2 t1p42 t1p42 motorola 2n2907a motorola CMPT2907 f95 samsung motorola transistor 2N2907A TC573002ECT ZTX749 TC57

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor BC 517 • High current gain • High collector current • Complementary type: BC 516 PNP Type Marking Ordering Code P inC onfigur ation 1 2 3 Package1) BC 517 - Q62702-C825 C TO-92 B E Maximum Ratings Parameter


    OCR Scan     		PDF Q62702-C825 111Jlllll! fl235b05 053SbOS D1SQ52Ã

    BQ 15 Transistor

    Abstract: marking 601 sot transistor bf 222 Electronic car ignition circuit
    Text: TELEFUNKEN ELECTRONIC 17E i> m f l ^ o c n b ooo^bos s • AL66 . S 601 T ■¡mUlFIUJlMKil?! electronic Ctmuv « IfechnoioQtM T -3 3 -a ? Silicon NPN Darlington Power Transistor Applications: Electronic car ignition circuit, general purposes switching application


    OCR Scan     		PDF SS100 BQ 15 Transistor marking 601 sot transistor bf 222 Electronic car ignition circuit

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network M otorola P referred D evices This new series of digital transistors is designed to replace a single device


    OCR Scan     		PDF -70/SO T-323 MUN5111T1 MUN5114T1

    transistor npn 12V 1A Collector Current

    Abstract: 2SC3053 uj01
    Text: SMALL-SIGNAL TRANSISTOR 2SC3053 FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION . 2SC3053 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING -, c +0-5 2 5 -0.3 designed for high frequency amplify, oscillating, frequency exchange, medium


    OCR Scan     		PDF 2SC3053 2SC3053 Ta-25t: transistor npn 12V 1A Collector Current uj01

    t056

    Abstract: 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR
    Text: MIL SPECS I C 0000125 0001340 E | INCH-POUND N OTICE OF VALIDATION M I L - S - 1 9 5 0 0 / 2 4 8 A (ER NOTICE 1 29 A u g u s t 1988 MI L I T A R Y S P E C I F I C A T I ON SHEET TRANSISTOR, NPN, SIL I C O N TYPES 2N2015, 2N2016 M i l i t a r y specification M I L - S - 1 9 5 0 0 / 2 4 8 A ( E R ) , d a t e d 10 A pril 1963,


    OCR Scan     		PDF 0D01B40 MIL-S-19500/248A 2N2015, 2N2016 0D001S5 2N20t 0D13S2 t056 2N2016 2N2016 JAN 2N2015 2n20 US ARMY TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    OCR Scan     		PDF STTA1512P/PI STTA1512P STTA1512PI

    Untitled

    Abstract: No abstract text available
    Text: STTA812D/DI/G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 1200V trr (typ) 50ns Vf 2.0V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION


    OCR Scan     		PDF STTA812D/DI/G STTA812DI STTA812D STTA812G

    Untitled

    Abstract: No abstract text available
    Text: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network


    OCR Scan     		PDF MUN2211/D MUN2211 MUN2212 MUN2213

    Untitled

    Abstract: No abstract text available
    Text: STTA512D/F/B TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V trr (typ) 45ns V f 2.0V (max) FEATURES AND BENEFITS • SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION


    OCR Scan     		PDF STTA512D/F/B ISOWATT220AC STTA512F STTA512D STTA512B

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    MCD656

    Abstract: LWE2025R
    Text: T -3 S -0 5 LWE2025R / V PHILIPS INTERNATIONAL SbE D • 711DflEb DDMbSTb 3Sfl ■ P H I N MICROWAVE LINEAR POWER TRANSISTOR NPN silicon power transistor fo r use in a com m on-emitter, class-A am plifier up to 2.3 GHz in CW conditions in m ilitary and professional applications.


    OCR Scan     		PDF -T-33-OS LWE2025R 7110fl2b FO-93) MCD656 T-33-05 MCD656 LWE2025R