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    TRANSISTOR MARKING 9D Search Results

    TRANSISTOR MARKING 9D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARKING 9D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 9D transistor

    Abstract: transistor transistor marking 9D KIA79L09F
    Text: SEMICONDUCTOR KIA79L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 9D KIA79L09F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only


    Original     		PDF KIA79L09F OT-89 marking 9D transistor transistor transistor marking 9D KIA79L09F

    Untitled

    Abstract: No abstract text available
    Text: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		PDF MT3S110FS

    MT3S110FS

    Abstract: No abstract text available
    Text: MT3S110FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S110FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application Low Noise Figure :NF=1.3dB @f=2GHz • High Gain:|S21e|2=9dB (@f=2GHz) • Leed (Pb)-free. 0.6 ±0.05 • 0.2±0.05


    Original     		PDF MT3S110FS MT3S110FS

    2SC5317FT

    Abstract: No abstract text available
    Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5317FT 2SC5317FT

    2SC5317FT

    Abstract: No abstract text available
    Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5317FT 2SC5317FT

    pnp transistor A1 sot-23

    Abstract: FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking
    Text: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC856/857/858/859/860 BC859, BC860 BC846 BC850 OT-23 BC856 BC857/860 BC858/859 pnp transistor A1 sot-23 FAIRCHILD SOT-23 MARK 30 MARKING 3E SOT23-3 Cross Reference sot23 SOT-23 Product Code Top Mark PC mark code 14 SOT-23 16 TRANSISTOR sot-23 3B SOT23-3 FAIRCHILD SOT-23 MARK PC 9aa marking

    MT4S03A

    Abstract: No abstract text available
    Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT4S03A MT4S03A

    MT4S03A

    Abstract: No abstract text available
    Text: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT4S03A MT4S03A

    MT4S03AU

    Abstract: 2-2K1A
    Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT4S03AU MT4S03AU 2-2K1A

    Untitled

    Abstract: No abstract text available
    Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF MT4S03A

    MT4S03

    Abstract: No abstract text available
    Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF MT4S03AU MT4S03

    marking MS

    Abstract: TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"
    Text: Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low noise : NF=1.5dB typ f=1GHz . 2 · High gain : | S2le | =9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.


    Original     		PDF 2SA1963 2018B 2SA1963] marking MS TA-0541 TRANSISTOR PNP 5GHz common base amplifier circuit designing transistor 5ghz pnp 2SA1963 5GHz PNP transistor "marking ms"

    2SC1412K

    Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
    Text: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.


    Original     		PDF 2SA1037AK 13t01 09kOl SC-88 SC-74 1T106 Cl021 2SC1412K 2SA1037AK UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK

    SMD TRANSISTOR MARKING 9D

    Abstract: NXP SMD TRANSISTOR MARKING CODE PMD9003D SMD TRANSISTOR MARKING 904
    Text: PMD9003D MOSFET driver Rev. 01 — 24 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET , NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small


    Original     		PDF PMD9003D OT457 SC-74) PMD9003D SMD TRANSISTOR MARKING 9D NXP SMD TRANSISTOR MARKING CODE SMD TRANSISTOR MARKING 904

    2SC5317F

    Abstract: No abstract text available
    Text: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1


    OCR Scan     		PDF 2SC5317F 16GHz 2SC5317F

    Untitled

    Abstract: No abstract text available
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ±0.1, r— r - i Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317 16GHz

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5317 2Ghz amplifier
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317 16GHz VHF-UHF Band Low Noise Amplifier 2SC5317 2Ghz amplifier

    2SC5317

    Abstract: No abstract text available
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317 16GHz 2SC5317

    Untitled

    Abstract: No abstract text available
    Text: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p


    OCR Scan     		PDF 2SC5316 16GHz

    2SC5317FT

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2i e|2= 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5317FT 16GHz 2SC5317FT

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1


    OCR Scan     		PDF 2SC5317F 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05


    OCR Scan     		PDF 2SC5317FT 16GHz S21el2

    Untitled

    Abstract: No abstract text available
    Text: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


    OCR Scan     		PDF 2SC5315 16GHz

    marking MS

    Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
    Text: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.


    OCR Scan     		PDF EN5230 2SA1963 marking MS rt 0608 TA-0541 5GHz PNP transistor