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    Toshiba America Electronic Components MT4S03BU(TE85L,F)

    MT4S03BU - Radio-frequency bipolar transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MT4S03BU(TE85L,F) 21,000 1
    • 1 $0.1389
    • 10 $0.1389
    • 100 $0.1306
    • 1000 $0.1181
    • 10000 $0.1181
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    MT4S03 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT4S03A Toshiba Scan PDF
    MT4S03A Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    MT4S03AU Toshiba Scan PDF
    MT4S03AU Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT4S03BU Toshiba Transistors Original PDF
    MT4S03BU Toshiba Japanese - Transistors Original PDF

    MT4S03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MT4S03A

    Abstract: No abstract text available
    Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    MT4S03A MT4S03A PDF

    MT4S03

    Abstract: No abstract text available
    Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


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    MT4S03AU MT4S03 PDF

    MT4S03A

    Abstract: No abstract text available
    Text: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


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    MT4S03A MT4S03A PDF

    MT4S03BU

    Abstract: MT4S03B MT4S MT4S03
    Text: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)


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    MT4S03BU MT4S03BU MT4S03B MT4S MT4S03 PDF

    MT4S03

    Abstract: No abstract text available
    Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    MT4S03A MT4S03 PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


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    MT4S03AU PDF

    MT4S03AU

    Abstract: 2-2K1A
    Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


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    MT4S03AU MT4S03AU 2-2K1A PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    MT4S03A PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB Typ. (@f = 2GHz) • High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)


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    MT4S03BU PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB typ. (@f = 2GHz) • High Gain: |S21e| = 9dB (typ.) (@f = 2 GHz) 2 Absolute Maximum Ratings (Ta = 25°C)


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    MT4S03BU PDF

    MT4S03BU

    Abstract: MA80160 MT4S03B 2-2K1A 1050a0 MT4S
    Text: MT4S03BU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT4S03BU 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.6dB 標準 (@f = 2 GHz) • 利得が高い。:|S21e|2 = 9dB(標準) (@f = 2 GHz)


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    MT4S03BU 20mmx25mmx1 55mmt) MT4S03BU MA80160 MT4S03B 2-2K1A 1050a0 MT4S PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


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    BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    MT4S03U

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT4S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MTA<;n3ii V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    MT4S03U MT4S03U PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    MT4S03 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    MT4S03 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


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    MT4S03AU PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MT4S03U TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    MT4S03U PDF

    Untitled

    Abstract: No abstract text available
    Text: MT4S03 TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz TT -a M A X IM U M RATINGS (Ta = 25°C)


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    MT4S03 PDF

    MT4S03A

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE MT4S03A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03A V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.2 2 .9 -0 .3 -fr • Low Noise : Figure : NF = 1.4 dB • High Gain : Gain = 9 dB f = 2 GHz - 3 M A X IM U M RATINGS (Ta = 25°C)


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    MT4S03A MT4S03A PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT4S03A TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03A Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS + 0.2 • • -fr Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 2 .9 -0 .3 MAXIMUM RATINGS (Ta = 25°C)


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    MT4S03A PDF

    MT4S03U

    Abstract: No abstract text available
    Text: TOSHIBA MT4S03U TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


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    MT4S03U MT4S03U PDF

    MT4S03U

    Abstract: No abstract text available
    Text: MT4S03U TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03U Unit in mm VHF—UHF SAND LOW NOISE AMPLIFIER APPLICATIONS J ¿5*0.1 # Low Noise ; Figure ; NF = 1.4 dB • High Gain : Gain —9 dB f = 2 GHz r— a 1 •Q MAXIMUM RATINGS (Ta = 2SX)


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    T4S03U MT4S03U MT4S03U PDF