TRANSISTOR m3a
Abstract: No abstract text available
Text: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120 3.04 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device: MMBT4401
|
Original
|
MMBT4403
-600mA
MMBT4401
2002/95/EC
IEC61249
225mW
OT-23
MIL-STD-750,
TRANSISTOR m3a
|
PDF
|
B632K
Abstract: D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632
Text: Ordering number:ENN341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]
|
Original
|
ENN341G
2SB632,
632K/2SD612,
5V/35V,
2009B
O-126
B632K,
B632K
D612 transistor
2SC536
D612K
transistor 2sc1175
2SC536 transistor
transistor b632k
2sc1175
2sd438 transistor
B632
|
PDF
|
TRANSISTOR m3a
Abstract: 40240B STC42F
Text: STC42F Semiconductor NPN Silicon Transistor Descriptions PIN Connection • High voltage application Features • Collector-Emitter voltage : VCEO = 300V • Low Collector-Emitter saturation voltage : VCE sat = 0.5V(Max.) 4 1 2 3 Ordering Information Type No.
|
Original
|
STC42F
STC42F
OT-89
OT-89
KSD-T5B013-000
TRANSISTOR m3a
40240B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STC42F NPN Silicon Transistor PIN Connection Descriptions • High voltage application Features • Collector-Emitter voltage : VCEO = 300V • Low Collector-Emitter saturation voltage : VCE sat = 0.5V(Max.) SOT-89 Ordering Information Type No. Marking Package Code
|
Original
|
STC42F
OT-89
KSD-T5B013-001
|
PDF
|
1N916
Abstract: MMBT4401 MMBT4403
Text: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary NPN device: MMBT4401 In compliance with EU RoHS 2002/95/EC directives
|
Original
|
MMBT4403
225mW
-600mA
MMBT4401
2002/95/EC
OT-23
MIL-STD-750,
1N916
MMBT4401
MMBT4403
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR SOT-323 POWER Unit: inch mm 200mW FEATURES PNP epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) Collector-emitter voltage VCE = -40V 0.087(2.20) 0.078(2.00) 40V 0.004(0.10)MIN. VOLTAGE Collector current IC =-600mA
|
Original
|
MMBT4403W
OT-323
200mW
-600mA
MMBT4401W
2002/95/EC
IEC61249
MIL-STD-750,
005gram
|
PDF
|
MJ13332
Abstract: No abstract text available
Text: tSztnL-donauctoi , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ13332 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEO(sus) = 350V(Min) • High Switching Speed
|
Original
|
MJ13332
100kHz
MJ13332
|
PDF
|
transistor c 2026
Abstract: No abstract text available
Text: MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 200mW SOT-323 Unit: inch mm FEATURES PNP epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) Collector-emitter voltage VCE = -40V 0.087(2.20) 0.078(2.00) 40V 0.004(0.10)MIN. VOLTAGE Collector current IC =-600mA
|
Original
|
MMBT4403W
-600mA
MMBT4401W
200mW
OT-323
2002/95/EC
IEC61249
OT-323
MIL-STD-750,
005gram
transistor c 2026
|
PDF
|
TRANSISTOR MARKING TE SOT363
Abstract: No abstract text available
Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts SOT-363 Unit：inch mm • PNP epitaxial silicon, planar design 0.087(2.20) 0.074(1.90) • Collector-emitter voltage V CE = -40V 0.010(0.25) 0.087(2.20) 0.078(2.00)
|
Original
|
MMDT4403
-600mA
2002/95/EC
OT-363
OT-363,
MIL-STD-750,
TRANSISTOR MARKING TE SOT363
|
PDF
|
TRANSISTOR m3a
Abstract: 1N916 MMBT4401 MMBT4403 1n916 equivalent
Text: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary NPN device: MMBT4401 MECHANICAL DATA Case: SOT-23 Terminals: Solderable per MIL-STD-202, Method 208
|
Original
|
MMBT4403
225mW
-600mA
MMBT4401
OT-23
MIL-STD-202,
MMBT4403
T/R13
TRANSISTOR m3a
1N916
MMBT4401
1n916 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives
|
Original
|
T4403
-600mA
2002/95/EC
OT-363,
MIL-STD-750,
OT-363
2011-REV
|
PDF
|
MMDT4403
Abstract: transistor c 2026 TRANSISTOR m3a
Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives
|
Original
|
MMDT4403
-600mA
2002/95/EC
OT-363,
MIL-STD-750,
MMDT4403
transistor c 2026
TRANSISTOR m3a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol
|
Original
|
MMBTH24LT1
OT-23
O-236AB)
|
PDF
|
MMBTH24LT1
Abstract: transistor cg sot-23 sot-23 marking 213 MMBTH24L
Text: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB
|
Original
|
MMBTH24LT1/D
MMBTH24LT1
OT-23
O-236AB)
DiodesMMBTH24LT1/D
MMBTH24LT1
transistor cg sot-23
sot-23 marking 213
MMBTH24L
|
PDF
|
|
|
BC517 spice model
Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information
|
Original
|
VN2410L
BC517 spice model
bc547 spice model
bc548 spice model
h1 m6c
MPS6595
bc557 Spice Model
BF245 A spice
spice model bf199
BC640 SPICE model
transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures
|
OCR Scan
|
BLF544
OT171
|
PDF
|
sot-23 marking 213
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor NPN Silicon • Motorola Preferred Device COLLECTOR 3 Designed for • f j = 400 MHz Min @ 8 mA EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS
|
OCR Scan
|
MMBTH24LT1/D
BTH24LT1
OT-23
O-236AB)
MMBTH24LT1
sot-23 marking 213
|
PDF
|
TRANSISTOR m3a
Abstract: BTH24LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor Motorola Preferred Device NPN Silicon • Designed for • f j = 400 MHz Min @ 8 mA 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage
|
OCR Scan
|
BTH24LT1
OT-23
O-236AB)
MMBTH24LT1
b3b72SS
DDT31T4
TRANSISTOR m3a
BTH24LT1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: File Num ber 1211 HARRIS SEMICONU SECTOR BUX39 SbE , . M3a22?1 High-Current, High-Speed, High-Power Silicon N-P-N Planar Transistors 1JQ ^ 7 ^ 3 3 -/ 3 For Switching and Amplifier Applications in Industrial and Commercial Service Features: • M aximum area-of-operation curves fo r dc and pulse operation - kn limit
|
OCR Scan
|
BUX39
M3a22
|
PDF
|
yg6260
Abstract: 2-10a1a AC701 2-16B1a 2-10R1A
Text: 4. T r a n s i s t o r U t i l i z a t i o n P r e c a u t i o n s When sem iconductors are being used, caution m ust be exercised in b o th shipping and installa tion. The following is an explanation o f precau tions to be observed when handling these devices.
|
OCR Scan
|
2-16E2A)
yg6260
2-10a1a
AC701
2-16B1a
2-10R1A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-1214: Rev 0; 7/97 m > k l> J X I > k l -s sS f D igitally Adjustable LCD Bias Supplies Features ♦ 1.8V to 20V Battery Input Voltage Output voltage can be set to a desired positive or nega tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con
|
OCR Scan
|
MAX1620/
MAXI620
MAX1621
|
PDF
|
E 1803 DHI
Abstract: AX1621 AX1620 MBRS0540 1803 DHI
Text: D i g i t a l l y A d j u s ta b le LCD Bias S up plies Description _ F e a t u r e s The MAX1620/MAX1621 convert a 1.8V to 20V battery voltage to a positive or negative LCD backplane bias voltage. Backplane bias voltage can be automatically
|
OCR Scan
|
32-Level
MAX1621)
MAX1620/M
MAX1620/MAX1621
E 1803 DHI
AX1621
AX1620
MBRS0540
1803 DHI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 19-1214; Rev 1; 1/98 jy\JY X A JV \ Digitally Adjustable LCD Bias Supplies The MAX1620/MAX1621 convert a 1.8V to 20V battery voltage to a positive or negative LCD backplane bias voltage. Backplane bias voltage can be automatically disabled when the d isp lay logic voltage is rem oved,
|
OCR Scan
|
MAX1620/MAX1621
MAX1620/
MAX1621
|
PDF
|
hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
|
OCR Scan
|
MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
|
PDF
|
