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Text: File Num ber 1211 HARRIS SEMICONU SECTOR BUX39 SbE , . M3a22?1 High-Current, High-Speed, High-Power Silicon N-P-N Planar Transistors 1JQ ^ 7 ^ 3 3 -/ 3 For Switching and Amplifier Applications in Industrial and Commercial Service Features: • M aximum area-of-operation curves fo r dc and pulse operation - kn limit
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BUX39
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Abstract: No abstract text available
Text: HARRIS nU SEMICONDUCTOR °il 4302269 HARRIS MW SEMICONDUCTOR d I | M3a22t,ci GQODGSfi 1 97D 00058 D J~ 3 GaAs Digital 1C 5-INPUT NOR/OR GATE HMD-11101-2 DC - 2.5 GHz DATA RATE PRELIMINARY PRODUCT DATA NOVEMBER 1986 HARRIS MICROWAVE SEMICONDUCTOR FEATURES □ Typical Input Data Rate of 2.5 GHz
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HMD-11101-2
M3a22t
8-11101-2P
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